TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π-MOS Ⅵ) TPCP8401 ○ Switching Regulator Applications ○ Load Switch Applications 0.33±0.05 Lead(Pb)-Free 0.05 M A Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive • Small footprint due to small and thin package • Low drain-source ON resistance 0.475 : P Channel RDS (ON) = 31 mΩ (typ.) • 5 1 4 B 0.65 Low drain-source ON resistance 2.9±0.1 0.8±0.05 : P Channel |Yfs| = 13 S (typ.) S 0.025 Low leakage current S 0.28 +0.1 -0.11 0.17±0.02 : P Channel IDSS = −10 μA (VDS = −12 V) • +0.13 1.12 -0.12 Enhancement−mode 1.12 +0.13 -0.12 : P Channel Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) 0.28 +0.1 -0.11 1．Source(Nch） 5．Gate(Pch) Absolute Maximum Ratings (Ta = 25°C) P-ch Characteristics Symbol Rating Unit Drain-source voltage VDSS −12 V Drain-gate voltage (RGS = 20 kΩ) VDGR −12 V Gate-source voltage V Drain current VGSS ±8 DC (Note 1) ID −5.5 Pulse (Note 1) IDP −22.0 PD 1.96 W PD 1.0 W EAS 5.3 mJ IAR −2.8 A EAR 0.22 mJ Tch 150 °C (t = 5 s) Drain power dissipation (Note 2a) (t = 5 s) Drain power dissipation (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature 0.05 M B A High forward transfer admittance • 2.8±0.1 • 8 2.4±0.1 • Unit: mm A 2．Drain(Pch) 6．Source(Pch) 3．Drain(Pch) 7．Gate(Nch) 4．Drain(Pch) 8．Drain(Nch) JEDEC ― JEITA ― TOSHIBA 2-3V1G Weight: 0.017 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Marking (Note5) 8 7 6 5 8401 ※ 1 2 3 4 Lot No. 1 2006-11-13 TPCP8401 N-ch Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±10 V DC (Note 1) ID 0.1 Pulse (Note 1) IDP 0.2 Channel temperature Tch 150 °C Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.12 mJ Channel temperature Tch 150 °C Drain current A This transistor is an electrostatic-sensitive device. Handle with caution. Common Absolute Maximum Ratings (Ta=25°C ) Characteristics Storage temperature range Symbol Rating Unit Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Max Unit Rth (ch-a) 63.8 °C/W Rth (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Mounted on FR4 board (glass epoxy, 0.8mm thick, Cu area: 25.4mm2) (t = 5s) (b) Mounted on FR4 board (glass epoxy, 0.8mm thick, printed minimum pad dimensions: 25.4mm2) (t = 5s) Note 3: VDD = −10 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −2.75 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: “●” on the lower left of the marking indicates pin 1. “*” shows the lot number, which consists of three digits. The first digit denotes the year of manufacture, expressed as the last digit of the calendar year; the next two digits denote the week of manufacture. Week of manufacture (01 for the first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-13 TPCP8401 Electrical Characteristics (Ta = 25°C) P-ch Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Symbol IGSS Test Condition VGS = ±8 V, VDS = 0 V Min Typ. Max Unit ⎯ ⎯ ±10 μA μA IDSS VDS = −12 V, VGS = 0 V ⎯ ⎯ −10 V (BR) DSS ID = −10 mA, VGS = 0 V −12 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 20 V −4 ⎯ ⎯ VDS = −10 V, ID = −200 μA −0.5 ⎯ −1.2 VGS = −1.8 V, ID = −1.4 A ⎯ 66 103 VGS = −2.5 V, ID = −2.8 A ⎯ 44 58 31 38 6.5 13 ⎯ ⎯ 1520 ⎯ ⎯ 330 ⎯ ⎯ 380 ⎯ ⎯ 9.5 ⎯ ⎯ 16 ⎯ ⎯ 28 ⎯ ⎯ 74 ⎯ ⎯ 20 ⎯ ⎯ 15 ⎯ ⎯ 5 ⎯ Vth RDS (ON) VGS = −4.5 V, ID = −2.8 A Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time Turn-on time tr VDS = −10 V, ID = −2.8 A VDS = −10 V, VGS = 0 V, f = 1 MHz ton Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) ID = −2.8 A VOUT 0V VGS −5 V RL = 2.1 Ω |Yfs| 4.7 Ω Forward transfer admittance tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd V V mΩ S pF ns VDD ∼ − −6 V Duty < = 1%, tw = 10 μs VDD ∼ − −10 V, VGS = −5 V, ID = −5.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current (pulse) (Note 1) IDRP ⎯ ⎯ ⎯ −22 A Forward voltage (diode) VDSF ⎯ ⎯ 1.2 V IDR = −5.5 A, VGS = 0 V 3 2006-11-13 TPCP8401 N-ch Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA V (BR) DSS ID = 0.1 mA, VGS = 0 V 20 ⎯ ⎯ V Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V VGS = 1.5 V, ID = 1 mA ⎯ 5.2 15 VGS = 2.5 V, ID = 10 mA ⎯ 2.2 4 VGS = 4 V, ID = 10 mA ⎯ 1.5 3 VDS = 3 V, ID = 10 mA 40 ⎯ ⎯ ⎯ 70 ⎯ Gate threshold voltage Drain-source ON resistance Forward transfer admittance |Yfs| ton 2.5 V VGS 0V ID = 10 mA VOUT 50 Ω Turn-on time RDS (ON) RL = 300Ω Drain-source breakdown voltage Switching time Turn-off time toff Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss VDD ∼ −3V Ω mS ns ⎯ 125 ⎯ ⎯ 9.3 ⎯ ⎯ 4.5 ⎯ ⎯ 9.8 ⎯ Duty < = 1%, tw = 10 μs VDS = 3 V, VGS = 0 V, f = 1 MHz pF Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. The VGS recommended voltage for turning on this product is 1.5 V or higher. 4 2006-11-13 TPCP8401 Pch ID – VDS ID – VDS −10 −1.8 −1.9 −2.5 −2 −4 −3 −4, −4.5 ID −1.6 −1.5 −2 VGS = −1.4 V −1 −0.8 −1.6 −1.2 Drain-source voltage VDS −1.9 −8 −5 −4 −1.8 −6 −1.7 −4 −1.6 −2 VGS = −1.4 V Common source Ta = 25°C Pulse test −0.4 Common source Ta = 25°C Pulse test −2 −3 −3 0 0 −2.5 −1.7 (A) −5 Drain current Drain current ID (A) −5 0 0 −2.0 −1 −2 −3 ID – VGS (V) Common source VDS = −10 V Pulse test (V) Common source Ta = 25°C Pulse test −0.8 VDS (A) −6 Drain-source voltage ID Drain current VDS VDS – VGS −1 −8 100°C −4 25°C −2 Ta = −55°C −0.6 −0.4 −0.2 ID = −4.5 A −2.2 A −1.1 A 0 0 −0.5 −1 −1.5 Gate-source voltage −2 VGS 0 0 −2.5 (V) −2 Ta = −55°C 10 100°C 25°C 1 0.3 0.1 −0.1 −0.3 −1 −8 VGS −10 (V) RDS (ON) – ID Common source VDS = −10 V Pulse test 3 −6 1 Drain-source on resistance RDS (ON) (mΩ) (S) |Yfs| 30 −4 Gate-source voltage |Yfs| – ID 100 Forward transfer admittance −5 (V) Drain-source voltage −10 −4 −3 Drain current −10 ID −30 Common source Ta = 25°C Pulse test 0.3 0.1 −1.8 V −2.5 V 0.03 VGS = −4.5 V 0.01 −0.1 −100 (A) −0.3 −1 −3 Drain current 5 −10 ID −30 −100 (A) 2006-11-13 TPCP8401 RDS (ON) – Ta IDR – VDS −100 160 Common source Ta = 25°C Pulse test (A) Pulse test −30 IDR 120 −2.8 A −5.5 A VGS = −1.8 V ID = −1.4A ID = −1.4A −1.8 −3 −1 VGS = 0 V ID = −1.4 A, −2.8 A, −5.5 A −40 0 40 80 Ambient temperature 120 Ta −1 0 160 0.4 0.8 Drain-source voltage (°C) Capacitance – VDS Vth (V) Gate threshold voltage (pF) Ciss 1000 C Capacitance VDS Coss Crss 300 100 30 10 −0.1 Common source Ta = 25°C f = 1 MHz VGS = 0 V −0.3 −1 −3 −10 Drain-source voltage −30 VDS −1.5 −1.0 −0.5 −40 (V) 0 40 80 Ambient temperature PD – Ta Ta 120 160 (°C) Dynamic input/output characteristics −20 (1) t = 5 s glass-epoxy board(a) 2 VDS (Note 2a) Drain-soursce voltage (2) Device mounted on a glass-epoxy board(b) 1.5 (1) DC (Note 2b) 1 (2) t = 5 s 0.5 (2) DC 40 80 Ambient temperature 120 Ta −10 Common source (1) Device mounted on a (V) (W) (V) Common source VDS = −10 V ID = −200 μA Pulse test 0 −80 −100 2.5 0 0 2.0 Vth – Ta 3000 PD 1.6 −2.0 10000 Drain power dissipation 1.2 ID = −5.5 A −16 Ta = 25°C Pulse test (°C) −12 −6 VDD = −10 V VDD = −10 V −8 −4 −5 V −5 −4 −2 −2.5 V 8 16 Total gate charge 6 −8 −2.5 V 0 0 160 VGS (V) −4.5 V 0 −80 −2.8 A −4.5 −2.0 24 Qg 32 VGS −2.5 V 40 −10 ゲート･ソース間電圧 80 Drain current Drain-source on resistance RDS (ON) (mΩ) Common source 0 40 (nC) 2006-11-13 TPCP8401 rth – tw Transient thermal impedance rth (°C/W) 1000 300 Device mounted on a glassepoxy board (b) (Note 2b) 100 30 Device mounted on a glassepoxy board (a) (Note 2a) 10 3 1 0.3 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area −100 −30 ID max (pulsed)* 1 ms* −10 Drain current ID (A) 10 ms* −3 −1 −0.3 −0.1 −0.03 −0.01 *: Single nonrepetitive pulse Ta = 25°C −0.003 Curves must be derated linearly with increase in temperature −0.001 てデ レ テ ングし −0.01 −0.03 −0.1 −0.3 −1 VDSS max Drain-source voltage −3 −10 −30 −100 VDS (V) 7 2006-11-13 TPCP8401 Nch ID – VDS ID – VGS 250 1000 Common source VDS = 3 V 2.3 10 (mA) 200 Common srouce Ta = 25°C 2.1 ID 1.9 150 Drain current Drain current ID (mA) 2.5 4 3 1.7 100 1.5 50 100 Ta = 100°C 10 25°C −25°C 1 0.1 VGS = 1.3 V 0 0 0.5 1 1.5 Drain-source voltage VDS 0.01 0 2 (V) 1 2 Gate-source voltage RDS (ON) – ID Common source 10 Drain-source on resistance RDS (ON) (Ω) Drain-source on resistance RDS (ON) (Ω) Ta = 25°C 8 VGS = 1.5 V 4 2.5 V 2 ID = 10 mA 5 4 3 Ta = 100°C 2 25°C 1 −25°C 4V 10 100 Drain current ID 0 0 1000 (mA) 2 4 RDS (ON) – Ta Vth (V) Common source VGS = 1.5 V, ID = 1 mA 5 Gate threshold voltage Drain-source on resistance RDS (ON) (Ω) 7 4 2.5 V, 10 mA 2 4 V, 10 mA 1 0 −25 0 25 50 75 Ambient temperature 8 VGS 10 (V) Vth – Ta 2 3 6 Gate-source voltage 8 6 (V) 6 Common source 0 1 VGS RDS (ON) – VGS 12 6 3 100 Ta 125 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 150 (°C) Common source ID = 0.1 mA VDS = 3 V 0 25 50 75 Ambient temperature 8 100 Ta 125 150 (°C) 2006-11-13 TPCP8401 ⎪Yfs⎪ – ID IDR – VDS Common source VDS = 3 V Ta = 25°C (mA) 100 250 200 Common source VGS = 0 V Ta = 25°C D IDR ⎪Yfs⎪ 300 Forward transfer admittance ( S) 500 Drain reverse current 50 30 10 5 3 1 1 10 Drain current 100 ID 150 S 100 50 0 0 1000 IDR G −0.2 (mA) −0.4 −0.6 −0.8 −1 Drain-source voltage VDS Capacitance – VDS 5000 VGS = 0 V f = 1 MHz (ns) Crss t Ciss Coss toff 1000 500 Switching time (pF) C Capacitance 10 1 (V) Common source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 3000 50 Common source −1.4 t – ID 100 5 −1.2 300 tf 100 ton 50 30 tr Ta = 25°C 0.3 0.1 0.5 1 5 Drain-source voltage 10 VDS 50 100 10 0.1 (V) 1 Drain current 9 10 ID 100 (mA) 2006-11-13 TPCP8401 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2006-11-13