GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS) • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level SOT-227 BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Lower overall losses available at frequencies = 20 kHz • Easy to assemble and parallel • Direct mounting to heatsink • Lower EMI, requires less snubbing • Plug-in compatible with other SOT-227 packages PRODUCT SUMMARY VCES 600 V VCE(on) (typical) 1.92 V VGE 15 V IC 100 A ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter breakdown voltage Continuous collector current Pulsed collector current SYMBOL TEST CONDITIONS MAX. UNITS 600 V VCES IC TC = 25 °C 200 TC = 100 °C 100 ICM Clamped inductive load current ILM Gate to emitter voltage VGE 400 VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 2.0 , See fig. 13a 400 ± 20 V 160 mJ V Reverse voltage avalanche energy EARV Repetitive rating; pulse width limited by maximum junction temperature RMS isolation voltage VISOL Any terminal to case, t = 1 minute 2500 TC = 25 °C 500 TC = 100 °C 200 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg Mounting torque A W - 55 to + 150 °C 1.3 (12) Nm (lbf in) 6-32 or M3 screw THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TYP. MAX. Junction to case RthJC - 0.25 Case to sink, flat, greased surface RthCS 0.05 - 30 - Weight of module Revision: 26-Oct-11 UNITS °C/W g Document Number: 94364 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA200SA60UP www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER MIN. TYP. MAX. Collector to emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 250 μA 600 - - Emitter to collector breakdown voltage V(BR)ECS VGE = 0 V, IC = 1.0 A Pulse width 80 μs; duty factor 0.1 18 - - - 0.38 - Temperature coeff. of breakdown SYMBOL V(BR)CES/TJ TEST CONDITIONS VGE = 0 V, IC = 10 mA IC = 100 A Collector to emitter saturation voltage Gate threshold voltage Temperature coeff. of threshold voltage UNITS V V/°C - 1.60 1.9 - 1.92 - IC = 100 A, TJ = 150 °C - 1.54 - VGE(th) VCE = VGE, IC = 250 μA 3.0 - 6.0 VGE(th)/TJ VCE = VGE, IC = 2.0 mA - - 11 - mV/°C 79 - - S VGE = 0 V, VCE = 600 V - - 1.0 VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 10 VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS 770 1200 VCE(on) Forward transconductance gfe Zero gate voltage collector current ICES Gate to emitter leakage current IGES IC = 200 A VGE = 15 V See fig. 2, 5 VCE = 100 V, IC = 100 A Pulse width 5.0 μs, single shot V mA SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Total gate charge (turn-on) Qg IC = 100 A - Gate-emitter charge (turn-on) Qge VCC = 400 V - 100 150 Gate-collector charge (turn-on) Qgc VGE = 15 V; See fig. 8 - 260 380 Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf Total switching loss Ets Internal emitter inductance LE Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Revision: 26-Oct-11 TJ = 25 °C IC = 100 A VCC = 480 V VGE = 15 V Rg = 2.0 Energy losses include “tail” See fig. 9, 10, 14 - 54 - - 79 - - 130 200 - 300 450 - 0.98 - - 3.48 - - 4.46 7.6 nC ns mJ - 56 - IC = 100 A, VCC = 480 V - 75 - VGE = 15 V, Rg = 2.0 Energy losses include “tail” See fig. 10, 11, 14 - 160 - - 460 - - 7.24 - mJ Measured 5 mm from package - 5.0 - nH VGE = 0 V VCC = 30 V f = 1.0 MHz; See fig. 7 - 16 500 - - 1000 - - 200 - TJ = 150 °C ns pF Document Number: 94364 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA200SA60UP www.vishay.com Vishay Semiconductors 200 For both: Duty cycle: 50 % TJ = 125 °C Tsink = 90 °C Gate drive as specified Power dissipation = 140 W Triangular wave: I Load Current (A) 160 Clamp voltage: 80 % of rated 120 60 % of rated voltage 80 Square wave: I 40 Ideal diodes 0 0.1 1 10 100 f - Frequency (kHz) TJ = 150 °C 100 TJ = 25 °C VGE = 15 V 20 µs pulse width 10 0.5 IC - Collector to Emitter Current (A) Maximum DC Collector Current (A) 1000 1.0 1.5 2.0 2.5 3.0 200 150 100 50 0 3.5 25 50 75 100 125 VCE - Collector to Emitter Voltage (V) TC - Case Temperature (°C) Fig. 2 - Typical Output Characteristics Fig. 4 - Maximum Collector Current vs. Case Temperature VCE - Collector to Emitter Voltage (V) IC - Collector to Emitter Current (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 1000 TJ = 150 °C TJ = 25 °C 100 VGE = 25 V 5 µs pulse width 10 5.0 6.0 7.0 8.0 150 3 VGE = 15 V 80 µs pulse width IC = 400 A IC = 200 A 2 IC = 100 A 1 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 VGE - Gate to Emitter Voltage (V) TJ - Junction Temperature (°C) Fig. 3 - Typical Transfer Characteristics Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Revision: 26-Oct-11 Document Number: 94364 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA200SA60UP www.vishay.com Vishay Semiconductors ZthJC - Thermal Response 1 D = 0.50 0.1 D = 0.20 PDM D = 0.10 t1 D = 0.05 0.01 t2 D = 0.02 D = 0.01 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 6 - Maximum Effektive Transient Thermal Impedance, Junction to Case 60 30 000 C - Capacitance (pF) 25 000 20 000 Total Switching Losses (mJ) VGE = 0 V, f = 1 MHz Cies = Cge + Cgc, Cce shorted Cres = Cgc Coes = Cce + Cgc Cies 15 000 Coes 10 000 5000 Cres 0 40 30 20 10 0 1 10 0 100 10 20 30 40 50 60 RG - Gate Resistance (Ω) VCE - Collector to Emitter Voltage (V) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage 20 100 VCC = 400 V IC = 110 A Total Switching Losses (mJ) VGE - Gate to Emitter Voltage (V) VCC = 480 V VGE = 15 V TJ = 25 °C IC = 200 A 50 16 12 8 4 0 0 200 400 600 800 IC = 350 A IC = 200 A 10 IC = 100 A 1 - 60 - 40 - 20 0 RG = 2.0 Ω VGE = 15 V VCC = 480 V 20 40 60 80 100 120 140 160 QG - Total Gate Charge (nC) TJ - Junction Temperature (°C) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage Fig. 10 - Typical Switching Losses vs. Junction Temperature Revision: 26-Oct-11 Document Number: 94364 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA200SA60UP www.vishay.com Vishay Semiconductors Total Switching Losses (mJ) 60 RG = 2.0 Ω TJ = 150 °C VCC = 480 V VGE = 15 V 50 L D.U.T. VC* 50 V 40 1000 V 30 1 2 20 * Driver same type as D.U.T.; VC = 80 % of VCE (max) Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain rated Id 10 Fig. 13a - Clamped Inductive Load Test Circuit 0 0 100 200 300 400 IC - Collector Current (A) RL = Fig. 11 - Typical Switching Losses vs. Collector Current 0 V to 480 V 480 V 4 x IC at 25 °C 480 µF 960 V IC - Collector Current (A) 1000 VGE = 20 V TJ = 125 °C Fig. 13b - Pulsed Collector Current Test Circuit 100 IC L Driver* D.U.T. VC 50 V 1000 V Safe operating area 1 10 2 1 10 100 1000 3 VCE - Collector to Emitter Voltage (V) * Driver same type as D.U.T., VC = 480 V Fig. 12 - Turn-Off SOA Fig. 14a - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 14b - Switching Loss Waveforms Revision: 26-Oct-11 Document Number: 94364 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA200SA60UP www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code G A 200 S A 60 U P 1 2 3 4 5 6 7 8 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - Generation 4, IGBT silicon, DBC construction 3 - Current rating (200 = 200 A) 4 - Single switch, no diode 5 - SOT-227 6 - Voltage rating (60 = 600 V) 7 - Speed/type (U = Ultrafast) 8 - None = Standard production P = Lead (Pb)-free CIRCUIT CONFIGURATION 3 (C) Lead assignment E 2 (G) C 4 3 1 2 E G 1, 4 (E) n-channel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 Revision: 26-Oct-11 Document Number: 94364 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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