VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • • • • • • • SOT-227 PRODUCT SUMMARY Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VCES 600 V BENEFITS VCE(on) (typical) 1.92 V VGE 15 V • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Lower overall losses available at frequencies = 20 kHz • Easy to assemble and parallel • Direct mounting to heatsink • Lower EMI, requires less snubbing • Plug-in compatible with other SOT-227 packages IC 100 A Speed 8 kHz to 30 kHz Package SOT-227 Circuit Single switch no diode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter breakdown voltage TEST CONDITIONS VCES Continuous collector current IC Pulsed collector current TC = 25 °C ILM Gate to emitter voltage VGE UNITS 600 V 200 TC = 100 °C 100 ICM Clamped inductive load current MAX. 400 VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, Rg = 2.0 , see fig. 13a 400 ± 20 V 160 mJ V Reverse voltage avalanche energy EARV Repetitive rating; pulse width limited by maximum junction temperature RMS isolation voltage VISOL Any terminal to case, t = 1 min 2500 TC = 25 °C 500 TC = 100 °C 200 Maximum power dissipation PD Operating junction and storage temperature range Mounting torque TJ, TStg 6-32 or M3 screw A W -55 to +150 °C 1.3 (12) Nm (lbf.in) UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction and storage temperature range SYMBOL TEST CONDITIONS TJ, TStg Thermal resistance, junction to case RthJC Thermal resistance case to heatsink RthCS Case style TYP. MAX. -55 - 150 °C/W - - 0.25 Flat, greased, surface - 0.05 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Weight Mounting torque MIN. SOT-227 Revision: 20-May-16 Document Number: 94364 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200SA60UP www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. V(BR)CES VGE = 0 V, IC = 250 μA 600 - - Emitter to collector breakdown voltage V(BR)ECS VGE = 0 V, IC = 1.0 A Pulse width 80 μs; duty factor 0.1 % 18 - - Temperature coefficient of breakdown voltage V(BR)CES/TJ - 0.38 - - 1.60 1.9 Collector to emitter breakdown voltage VGE = 0 V, IC = 10 mA IC = 100 A Collector to emitter saturation voltage Gate threshold voltage Temperature coefficient of threshold voltage IC = 200 A VGE = 15 V See fig. 2, 5 UNITS V V/°C - 1.92 - IC = 100 A, TJ = 150 °C - 1.54 - VGE(th) VCE = VGE, IC = 250 μA 3.0 - 6.0 VGE(th)/TJ VCE = VGE, IC = 2.0 mA - -11 - mV/°C 79 - - S VGE = 0 V, VCE = 600 V - - 1.0 VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 10 VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS VCE(on) Forward transconductance gfe Zero gate voltage collector current ICES Gate to emitter leakage current IGES VCE = 100 V, IC = 100 A Pulse width 5.0 μs, single shot V mA SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Total gate charge (turn-on) Qg IC = 100 A - 770 1200 Gate-emitter charge (turn-on) Qge VCC = 400 V - 100 150 Gate-collector charge (turn-on) Qgc VGE = 15 V; See fig. 8 - 260 380 Turn-on delay time td(on) - 54 - Rise time Turn-off delay time Fall time tr td(off) tf Turn-on switching loss Eon Turn-off switching loss Eoff TJ = 25 °C IC = 100 A VCC = 480 V VGE = 15 V Rg = 2.0 Energy losses include “tail” See fig. 9, 10, 14 - 79 - - 130 200 - 300 450 - 0.98 - - 3.48 - Total switching loss Ets - 4.46 7.6 Turn-on delay time td(on) - 56 - Rise time Turn-off delay time Fall time Total switching loss Internal emitter inductance tr td(off) tf Ets LE Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres TJ = 150 °C IC = 100 A, VCC = 480 V - 75 - VGE = 15 V, Rg = 2.0 Energy losses include “tail” See fig. 10, 11, 14 - 160 - Measured 5 mm from package VGE = 0 V VCC = 30 V f = 1.0 MHz; See fig. 7 nC ns mJ ns - 460 - - 7.24 - mJ - 5.0 - nH - 16 500 - - 1000 - - 200 - pF Revision: 20-May-16 Document Number: 94364 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200SA60UP www.vishay.com Vishay Semiconductors 200 For both: Duty cycle: 50 % TJ = 125 °C Tsink = 90 °C Gate drive as specified Power dissipation = 140 W Triangular wave: I Load Current (A) 160 Clamp voltage: 80 % of rated 120 60 % of rated voltage 80 Square wave: I 40 Ideal diodes 0 0.1 1 10 100 f - Frequency (kHz) TJ = 150 °C 100 TJ = 25 °C VGE = 15 V 20 µs pulse width 10 0.5 IC - Collector to Emitter Current (A) Maximum DC Collector Current (A) 1000 1.0 1.5 2.0 2.5 3.0 150 100 50 0 25 50 75 100 125 150 VCE - Collector to Emitter Voltage (V) TC - Case Temperature (°C) Fig. 2 - Typical Output Characteristics Fig. 4 - Maximum Collector Current vs. Case Temperature 1000 TJ = 150 °C TJ = 25 °C 100 VGE = 25 V 5 µs pulse width 10 5.0 200 3.5 VCE - Collector to Emitter Voltage (V) IC - Collector to Emitter Current (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 6.0 7.0 8.0 3 VGE = 15 V 80 µs pulse width IC = 400 A IC = 200 A 2 IC = 100 A 1 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 VGE - Gate to Emitter Voltage (V) TJ - Junction Temperature (°C) Fig. 3 - Typical Transfer Characteristics Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Revision: 20-May-16 Document Number: 94364 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200SA60UP www.vishay.com Vishay Semiconductors ZthJC - Thermal Response 1 D = 0.50 0.1 D = 0.20 PDM D = 0.10 t1 D = 0.05 t2 D = 0.02 0.01 D = 0.01 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 30 000 C - Capacitance (pF) 25 000 20 000 Cies 15 000 Coes 10 000 5000 Cres Total Switching Losses (mJ) 60 VGE = 0 V, f = 1 MHz Cies = Cge + Cgc, Cce shorted Cres = Cgc Coes = Cce + Cgc 0 40 30 20 10 0 1 10 0 100 10 20 30 40 50 60 VCE - Collector to Emitter Voltage (V) RG - Gate Resistance (Ω) Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance 20 100 VCC = 400 V IC = 110 A Total Switching Losses (mJ) VGE - Gate to Emitter Voltage (V) VCC = 480 V VGE = 15 V TJ = 25 °C IC = 200 A 50 16 12 8 4 0 0 200 400 600 800 IC = 350 A IC = 200 A 10 IC = 100 A 1 - 60 - 40 - 20 0 RG = 2.0 Ω VGE = 15 V VCC = 480 V 20 40 60 80 100 120 140 160 QG - Total Gate Charge (nC) TJ - Junction Temperature (°C) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage Fig. 10 - Typical Switching Losses vs. Junction Temperature Revision: 20-May-16 Document Number: 94364 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200SA60UP www.vishay.com Vishay Semiconductors Total Switching Losses (mJ) 60 RG = 2.0 Ω TJ = 150 °C VCC = 480 V VGE = 15 V 50 L D.U.T. VC* 50 V 40 1000 V 30 1 2 20 * Driver same type as D.U.T.; VC = 80 % of VCE (max) Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain rated Id 10 Fig. 13a - Clamped Inductive Load Test Circuit 0 0 100 200 300 400 IC - Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector Current RL = 0 V to 480 V 480 µF 960 V 1000 IC - Collector Current (A) 480 V 4 x IC at 25 °C VGE = 20 V TJ = 125 °C Fig. 13b - Pulsed Collector Current Test Circuit 100 IC L Driver* D.U.T. VC 50 V 1000 V Safe operating area 1 10 1 10 100 2 1000 3 VCE - Collector to Emitter Voltage (V) * Driver same type as D.U.T., VC = 480 V Fig. 12 - Turn-Off SOA Fig. 14a - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 14b - Switching Loss Waveforms Revision: 20-May-16 Document Number: 94364 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA200SA60UP www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G A 200 S A 60 U P 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - Generation 4, IGBT silicon, DBC construction 4 - Current rating (200 = 200 A) 5 - Single switch, no diode 6 - SOT-227 7 - Voltage rating (60 = 600 V) 8 - Speed/type (U = ultrafast) 9 - None = standard production P = lead (Pb)-free CIRCUIT CONFIGURATION 3 (C) Lead assignment E 2 (G) C 4 3 1 2 E G 1, 4 (E) n-channel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95425 Packaging information www.vishay.com/doc?95423 Revision: 20-May-16 Document Number: 94364 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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