70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt® hyperfast diode • Very low stray inductance design for high speed operation • Integrated thermistor • Isolated baseplate MTP • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY BENEFITS INPUT BRIDGE DIODE, TJ = 150 °C VRRM 1200 V lO at 80 °C 48 A VFM at 25 °C at 20 A 1.05 V • Lower conduction losses and switching losses • Higher switching frequency up to 150 kHz • Optimized for welding, UPS, and SMPS applications PFC IGBT, TJ = 150 °C • PCB solderable terminals VCES 600 V VCE(sat) at 25 °C at 40 A 1.93 V IC at 80°C 66 A FRED Pt® • Direct mounting to heatsink PFC DIODE, TJ = 150 °C 600 V VR IF(DC) at 80 °C 55 A VF at 25 °C at 40 A 1.76 V FRED Pt® AP DIODE, TJ = 150 °C VR 600 V IF(DC) at 80 °C 13 A VF at 25 °C at 4 A 1.1 V ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak reverse voltage Input Rectifier Bridge Maximum average output current TJ = 150 °C maximum Surge current (Non-repetitive) Maximum I2t for fusing VRRM IO IFSM I2t MAX. UNITS 1200 V TC = 80 °C 48 Rated VRRM applied 250 10 ms, sine pulse 316 VCES TJ = 25 °C 600 Gate to emitter voltage VGE IGES max. ± 250 ns ± 20 at VGE = 15 V, TJ = 150 °C maximum Pulsed collector current Revision: 07-Sep-11 TEST CONDITIONS Collector to emitter voltage Maximum continuous collector current PFC IGBT SYMBOL IC ICM TC = 25 °C 96 TC = 80 °C 66 (1) Clamped inductive load current ILM Maximum power dissipation PD 250 A A2s V A 250 TC = 25 °C 378 W Document Number: 93410 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 70MT060WSP www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Repetitive peak reverse voltage IF UNITS 600 V TC = 25 °C 82 TC = 80 °C 55 A PD TC = 25 °C 181 W Maximum non-repetitive peak current IFSM TC = 25 °C 360 A Repetitive peak reverse voltage VRRM 600 V Maximum power dissipation TC = 25 °C 21 TC = 80 °C 13 PD TC = 25 °C 32 W IFSM TC = 25 °C 60 A Maximum continuous forward current TJ = 150 °C maximum AP Diode MAX. VRRM Maximum continuous forward current TJ = 150 °C maximum PFC Diode TEST CONDITIONS IF Maximum power dissipation Maximum non-repetitive peak current Maximum operating junction temperature A TJ 150 Storage temperature range TStg - 40 to + 150 RMS isolation voltage VISOL VRMS t = 1 s, TJ = 25 °C °C 3500 W R CONDUCTION PER JUNCTION - SINGLE PHASE BRIDGE DIODE SINE HALF WAVE CONDUCTION DEVICES 70MT060WSP RECTANGULAR WAVE CONDUCTION UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.273 0.302 0.322 0.338 0.350 0.236 0.288 0.294 0.287 0.235 °C/W ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER Blocking voltage Input Rectifier Bridge IRRM Forward voltage drop VFM Forward slope resistance rt Conduction threshold voltage VT VBR(CES)/TJ Collector to emitter voltage VCE(ON) Gate threshold voltage VGE(th) Collector to emitter leakage current ICES Gate to emitter leakage IGES Blocking voltage Reverse leakage current AP Diode BVCES Temperature coefficient of breakdown voltage Forward voltage drop PFC Diode BVRRM Reverse leakage current Collector to emitter breakdown voltage PFC IGBT SYMBOL Forward voltage drop Revision: 07-Sep-11 VFM BVRM IRM VFM TEST CONDITIONS IR = 250 μA MIN. TYP. MAX. UNITS 1200 - - V VRRM = 1200 V - - 0.1 VRRM = 1200 V, TJ = 150 °C - - 3.0 IF = 20 A - 1.05 1.2 IF = 20 A, TJ = 150 °C - 0.94 1.0 mA V - - 8.7 m - - 0.94 V 600 - - V IC = 0.5 mA (25 °C to 125 °C) - 0.6 - V/°C VGE 15 V, IC = 40 A - 1.93 2.15 VGE = 15 V, lC = 40 A, TJ = 125 °C - 2.30 2.55 TJ = 150 °C VGE = 0 V, IC = 0.5 mA VCE = VGE, IC = 500 μA 2.9 - 5.6 VGE = 0 V, VCE = 600 V - - 0.1 VGE = 0 V, VCE = 600 V, TJ = 125 °C - - 1 VGE = ± 20 V - - ± 100 IF = 40 A - 1.76 2.23 IF = 40 A, TJ = 125 °C IR = 0.5 mA VRRM = 600 V V V mA nA - 1.34 1.62 600 - - - - 75 μA mA VRRM = 600 V, TJ = 125 °C - - 0.5 IF = 4 A - 1.1 1.28 IF = 4 A, TJ = 125 °C - 0.95 1.09 V V Document Number: 93410 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 70MT060WSP www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS RECOVERY PARAMETER PFC Diode AP Diode Peak reverse recovery current Irr Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery time trr Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery time trr Reverse recovery charge Qrr IF = 40 A dI/dt = 200 A/μs VR = 200 V - 4 7 A - 59 79 ns - 118 180 nC IF = 40 A, TJ = 125 °C dI/dt = 200 A/μs VR = 200 V - 12 17 A - 127 170 ns - 733 1200 nC IF = 4 A dI/dt = 200 A/μs VR = 200 V - 7 10 A - 78 120 ns - 290 600 nC MIN. TYP. MAX. UNITS - 320 - - 42 - SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Qg Gate to source charge Qgs Gate to drain (Miller) charge Qgd - 110 - Turn-on switching loss Eon - 0.13 - Turn-off switching loss Eoff - 0.18 - Total switching loss Etot - 0.31 - Turn-on delay time td(on) - 193 - - 35 - - 202 - Rise time Turn-off delay time tr IC = 50 A VCC = 400 V VGE = 15 V IC = 70 A, VCC = 360 V, VGE = 15 V Rg = 5 , L = 500 μH, TJ = 25 °C td(off) tf - 49 - Turn-on switching loss Eon - 0.25 - Turn-off switching loss Eoff - 0.32 - - 0.57 - - 193 - - 35 - - 208 - Fall time PFC IGBT SYMBOL Total gate charge Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time tr IC = 70 A, VCC = 360 V, VGE = 15 V Rg = 5 , L = 500 μH, TJ = 125 °C td(off) tf - 66 - Input capacitance Cies - 7430 - Output capacitance Coes - 530 - Reverse transfer capacitance Cres - 94 - Fall time Reverse bias safe operating area RBSOA VGE = 0 V VCC = 30 V f = 1 MHz IC = 250 A, VCC = 400 V, VP = 600 V, Rg = 22 , VGE = 15 V, L = 500 μH, TJ = 150 °C nC mJ ns mJ ns pF Full square THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER MIN. TYP. MAX. UNITS Resistance SYMBOL R TJ = 25 °C TEST CONDITIONS - 30 000 - B value B TJ = 25 °C/TJ = 85 °C - 4000 - K Notes • Repetitive rating; pulsed with limited by maximum junction temperature. Revision: 07-Sep-11 Document Number: 93410 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 70MT060WSP www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Input Rectifier Bridge SYMBOL MIN. TYP. MAX. - - 0.9 Junction to case diode thermal resistance PFC IGBT Junction to case IGBT thermal resistance PFC Diode Junction to case PFC diode thermal resistance AP Diode Junction to case AP diode thermal resistance RthJC Case to sink, flat, greased surface per module Mounting torque ± 10 % to heatsink RthCS (1) Approximate weight UNITS - - 0.33 - - 0.69 - - 3.92 - 0.06 - °C/W - - 4 Nm - 65 - g °C/W Notes • A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. Instantaneous On-State Current (A) Maximum Allowable Case Temperature (°C) 160 140 120 100 180° (Rect.) 80 180° (Sine) 60 40 20 0 0 10 20 30 40 50 60 70 80 100 TJ = 150 °C 10 0 1 2 3 Instantaneous Voltage Drop (V) 93410_03 Fig. 3 - Single Phase Input Bridge On-State Voltage Drop Characteristics Fig. 1 - Single Phase Input Bridge Output Current Ratings Characteristics 325 300 At any rated load condition and with rated VRRM applied following surge. Initial TJ = TJ max. No voltage reapplied Rated VRRM reapplied 300 250 Peak Half Sine Wave On-State Current (A) Maximum Average On-State Power Loss (W) TJ = 25 °C 1 90 100 Average Output Current (A) 93410_01 1000 200 180° (Sine) 150 180° (Rect.) 100 275 250 225 200 175 150 125 100 50 75 0 0 10 20 30 40 50 60 70 Total Output Current (A) 93410_02 Fig. 2 - Single Phase Bridge On-State Power Loss Characteristics Revision: 07-Sep-11 50 0.01 80 93410_04 0.1 1 Pulse Train Duration (s) Fig. 4 - Single Phase Input Bridge Maximum Non-Repetitive Surge Current (Per Junction) Document Number: 93410 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 70MT060WSP ZthJC - Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 10 Steady state value RthJC = 0.9 °C/W (DC operation) 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 93410_05 250 160 140 200 VGE = 18 V 120 100 IC (A) Allowable Case Temperature (°C) Fig. 5 - Maximum Input Bridge Thermal Impedance ZthJC Characteristics (Per Junction) 80 VGE = 15 V 150 VGE = 12 V VGE = 9 V 100 60 40 50 20 0 0 0 20 40 60 80 100 ID - Continuous Collector Current (A) 93410_06 0 120 1 2 Fig. 6 - Maximum IGBT Continuous Collector Current vs. Case Temperature 3 4 5 VCE (V) 93410_08 Fig. 8 - Typical IGBT Output Characteristics, TJ = 25 °C 1000 250 100 200 VGE = 18 V IC (A) IC (A) 10 VGE = 15 V 150 VGE = 12 V 1 100 0.1 50 0.01 VGE = 9 V 0 1 93410_07 10 100 1000 VCE (V) Fig. 7 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V Revision: 07-Sep-11 0 93410_09 1 2 3 4 5 VCE (V) Fig. 9 - Typical IGBT Output Characteristics, TJ = 125 °C Document Number: 93410 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 70MT060WSP www.vishay.com 250 IC (A) 200 150 TC = 125 °C 100 TC = 25 °C 50 0 3 4 5 6 7 8 VGE (V) 93410_10 IF - Instantaneous Forward Current (A) Vishay Semiconductors 90 80 70 50 TC = 125 °C ICES (mA) 0.1 0.01 TC = 25 °C 30 20 TJ = 25 °C 10 0 0.5 1.0 1.5 2.0 2.5 3.0 160 140 120 100 80 60 40 20 0 200 300 400 500 600 VCES (V) 93410_11 0 4.0 TC = 25 °C 3.5 3.0 TC = 125 °C 2.5 2.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Fig. 12 - Typical IGBT Gate Thresold Voltage Revision: 07-Sep-11 15 20 25 30 100 1.0 IC (mA) 93410_12 10 Fig. 14 - Maximum Continuous Forward Current vs. Case Temperature Antiparallel Diode IF - Instantaneous Forward Drop (A) 4.5 5 IF - Continuous Forward Current (A) 93410_14 Fig. 11 - Typical IGBT Zero Gate Voltage Collector Current Vgeth (V) TJ = 150 °C 40 VF - Anode to Cathode Forward Voltage Drop (V) Fig. 13 - Typical Diode Forward Voltage Characteristics of Antiparallel Diode, tp = 500 μs Allowable Case Temperature (°C) 1 0.2 TJ = 125 °C 60 93410_13 Fig. 10 - Typical IGBT Transfer Characteristics, TJ = 125 °C 0.001 100 100 93410_15 90 80 TJ = 150 °C 70 TJ = 125 °C 60 50 40 TJ = 25 °C 30 20 10 0 0.25 0.75 1.25 1.75 2.25 2.75 3.25 3.75 VF - Forward Voltage Drop (V) Fig. 15 - Typical PFC Diode Forward Voltage Document Number: 93410 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 70MT060WSP Vishay Semiconductors 1.6 160 140 1.2 120 Energy (mJ) Allowable Case Temperature (°C) www.vishay.com 100 80 60 0.8 Eoff Eon 0.4 40 20 0 0 0 20 40 60 80 IF - Continuous Forward Current (A) 93410_16 0 100 10 20 Fig. 16 - Maximum Continuous Forward Current vs. Case Temperature PFC Diode 40 50 Fig. 19 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 70 A, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 1 Switching Time (ns) 1000 TJ = 150 °C IR (mA) 0.1 0.01 td(off) td(on) tf 100 tr TJ = 25 °C 0.001 100 10 200 300 400 500 600 VR (V) 93410_17 0 20 40 60 80 IC (A) 93410_20 Fig. 17 - Typical FRED Pt® Chopper Diode Reverse Current vs. Reverse Voltage Fig. 20 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 1000 0.4 0.2 Switching Time (ns) Eoff 0.3 Energy (mJ) 30 Rg (Ω) 93410_19 Eon 0.1 td(off) td(on) 100 tf tr 10 0 0 93410_18 20 40 60 IC (A) Fig. 18 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 Revision: 07-Sep-11 0 80 93410_21 10 20 30 40 50 Rg (Ω) Fig. 21 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, IC = 70 A, VCE = 360 V, VGE = 15 V, L = 500 μH Document Number: 93410 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 70MT060WSP www.vishay.com Vishay Semiconductors 150 150 trr (ns) trr (ns) TJ = 125 °C TJ = 125 °C 100 100 TJ = 25 °C 50 100 TJ = 25 °C 200 300 400 dIF/dt (A/μs) 93410_22 50 100 500 200 Fig. 22 - Typical trr Antiparallel Diode vs. dIF/dt Vrr = 200 V, IF = 4 A 300 400 500 dIF/dt (A/μs) 93410_25 Fig. 25 - Typical trr Chopper Diode vs. dIF/dt, Vrr = 200 V, IF = 40 A 20 20 15 15 125 °C Irr (A) Irr (A) TJ = 125 °C 10 10 TJ = 25 °C 25 °C 5 5 0 100 200 300 400 dIF/dt (A/μs) 93410_23 0 100 500 200 300 400 500 dIF/dt (A/μs) 93410_26 Fig. 23 - Typical Irr Antiparallel Diode vs. dIF/dt Vrr = 200 V, IF = 4 A Fig. 26 - Typical Irr Chopper Diode vs. dIF/dt Vrr = 200 V, IF = 40 A 700 1100 1000 600 900 TJ = 125 °C 400 300 125 °C 800 Qrr (nC) Qrr (nC) 500 TJ = 25 °C 700 600 500 400 200 300 25 °C 200 100 100 0 100 200 300 400 dIF/dt (A/μs) 93410_24 Fig. 24 - Typical Qrr Antiparallel Diode vs. dIF/dt Vrr = 200 V, IF = 4 A Revision: 07-Sep-11 0 100 500 93410_27 200 300 400 500 dIF/dt (A/μs) Fig. 27 - Typical Qrr Chopper Diode vs. dIF/dt, Vrr = 200 V, IF = 40 A Document Number: 93410 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 70MT060WSP ZthJC - Transient Thermal Impedance Junction to Case (°C/W) www.vishay.com Vishay Semiconductors 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 93410_28 Fig. 28 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) Driver L D.U.T. 0 + VCC - D + C - 1K 900 V D.U.T. Fig. C.T.1 - Gate Charge Circuit (Turn-Off) Fig. C.T.3 - S.C. SOA Circuit L Diode clamp/ D.U.T. + - 80 V L + - D.U.T. -5V D.U.T./ Driver 1000 V Rg + VCC Rg Fig. C.T.2 - RBSOA Circuit Fig. C.T.4 - Switching Loss Circuit R= D.U.T. VCC ICM + VCC Rg Fig. C.T.5 - Resistive Load Circuit Revision: 07-Sep-11 Document Number: 93410 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 70MT060WSP www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION G1 H1 A1 B1 D1 D3 E7 D6 Th M1 M3 A4 F7 Q1 C4 D5 H7 D2 D4 M7 D1 E1 A7 C7 DIMENSIONS in millimeters 12.1 ± 0.3 Ø 1.1 ± 0.025 2.1 1.5 3.0 39.5 ± 0.3 12 ± 0.3 17± 0.3 3 2.5 ± 0.1 6 z detail Use Self Tapping Screw or M2.5 x X. e.g. M2.5 x 6 or M2.5 x 8 according to Pcb thickness used 45 ± 0.1 63.5 ± 0.15 0.8 Ra 48.7 ± 0.3 1.3 21.1 ± 0.5 7.4 4.1 A B C D E F G H I L M X 7 6 Ø 2.1(X4) 12 27.5 ± 0.3 Diam. 5 (X4) 5 6 31.8 ± 0.15 4 22.8 7.6 3 33.2 ± 0.3 2 15.2 45° 5.2 19.8 ± 0.1 1 R 2.6 (X2) 18 24 30 PINS POSITION WITH TOLERANCE Ø 0.6 LINKS TO RELATED DOCUMENTS Dimensions Revision: 07-Sep-11 www.vishay.com/doc?95383 Document Number: 93410 10 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors MTP - Full Pin DIMENSIONS in millimeters 3.0 2.1 1.5 z detail 12 ± 0.3 39.5 ± 0.3 6 12 ± 0.3 Ø 1.1 ± 0.025 3 Use self taping screw or M2.5 x X. e.g. M2.5 x 6 or M2.5 x 8 according to PCB thickness used 17 ± 0.3 2.5 ± 0.1 45 ± 0.1 63.5 ± 0.15 0.8 Ra 1.3 21.1 7.4 48.7 ± 0.3 Ø 1 ± 0.025 + 0.5 - 0.2 4.1 A B C D E F G H I L M 1 45° 19.8 ± 0.1 2 27.5 ± 0.3 31.8 ± 0.15 3 7.6 4 15.2 5 22.8 Ø 5 (x 4) 33.2 ± 0.3 6 7 5.2 Ø 2.1 (x 4) R2.6 (x 2) 6 12 Pins position with tolerance Ø 0.5 22.8 ± 0.5 Ground pin 18 24 7 30 20 Document Number: 95383 Revision: 19-Nov-10 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000