MP4503 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4503 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. · Package with heat sink isolated to lead (SIP 12 pin) · High collector power dissipation (4 devices operation) · High collector current: IC (DC) = ±4 A (max) · High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Unit: mm : PT = 5 W (Ta = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating NPN PNP Unit Collector-base voltage VCBO 100 −100 V Collector-emitter voltage VCEO 80 −80 V Emitter-base voltage VEBO 5 −5 V JEDEC ― DC IC 4 −4 ― ICP 6 −6 A JEITA Pulse IB 0.4 −0.4 Collector current Continuous base current Collector power dissipation 3.0 PC (1 device operation) Collector power dissipation Ta = 25°C (4 devices operation) Tc = 25°C Isolation voltage Junction temperature Storage temperature range A TOSHIBA 2-32B1C Weight: 6.0 g (typ.) W 5.0 PT W 25 VIsol 1000 V Tj 150 °C Tstg −55 to 150 °C Array Configuration 7 R1 R2 8 12 11 4 9 2 5 1 R1 R2 6 R1 ≈ 4.5 kΩ R2 ≈ 300 Ω 1 2002-11-20 MP4503 Thermal Characteristics Characteristics Thermal resistance of junction to ambient Symbol Max Unit ΣRth (j-a) 25 °C/W ΣRth (j-c) 5.0 °C/W TL 260 °C (4 devices operation, Ta = 25°C) Thermal resistance of junction to case (4 devices operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 A ― ― 20 µA Collector cut-off current ICEO VCE = 80 V, IB = 0 A ― ― 20 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 A 0.5 ― 2.5 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 80 ― ― V hFE (1) VCE = 2 V, IC = 1 A 2000 ― ― hFE (2) VCE = 2 V, IC = 3 A 1000 ― ― Collector-emitter VCE (sat) IC = 3 A, IB = 6 mA ― ― 1.5 Base-emitter VBE (sat) IC = 3 A, IB = 6 mA ― ― 2.0 VCE = 2 V, IC = 0.5 A ― 60 ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 30 ― pF ― 0.2 ― ― 1.5 ― ― 0.6 ― Saturation voltage Transition frequency Collector output capacitance Turn-on time fT Cob ton Input 20 µs Storage time IB2 tstg IB1 Switching time ― V µs VCC = 30 V IB2 Fall time Output IB1 10 Ω DC current gain tf IB1 = −IB2 = 6 mA, duty cycle ≤ 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 4 A Surge current IFSM t = 1 s, 1 shot ― ― 6 A IF = 1 A, IB = 0 A ― ― 2.0 V ― 1.0 ― µs ― 8 ― µC Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 4 A, VBE = −3 V, dIF/dt = −50 A/µs 2 2002-11-20 MP4503 Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −100 V, IE = 0 A ― ― −20 µA Collector cut-off current ICEO VCE = −80 V, IB = 0 A ― ― −20 µA Emitter cut-off current IEBO VEB = −5 V, IC = 0 A −0.5 ― −2.5 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 A −80 ― ― V hFE (1) VCE = −2 V, IC = −1 A 2000 ― ― hFE (2) VCE = −2 V, IC = −3 A 1000 ― ― Collector-emitter VCE (sat) IC = −3 A, IB = −6 mA ― ― −1.5 Base-emitter VBE (sat) IC = −3 A, IB = −6 mA ― ― −2.0 VCE = −2 V, IC = −0.5 A ― 40 ― MHz VCB = −10 V, IE = 0 A, f = 1 MHz ― 55 ― pF ― 0.15 ― ― 0.80 ― ― 0.40 ― Transition frequency Collector output capacitance Cob ton IB1 Turn-on time fT Switching time Storage time tstg Input 20 µs Output IB2 10 Ω Saturation voltage IB2 DC current gain IB1 ― V µs VCC = −30 V Fall time tf −IB1 = IB2 = 6 mA, duty cycle ≤ 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 4 A Surge current IFSM t = 1 s, 1 shot ― ― 6 A IF = 1 A, IB = 0 A ― ― 2.0 V ― 1.0 ― µs ― 8 ― µC Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 4 A, VBE = 3 V, dIF/dt = −50 A/µs 3 2002-11-20 MP4503 IC – VCE IC – VBE 6 6 Common emitter 5 Common emitter 1 5 VCE = 2 V 0.5 0.3 3 0.23 2 IC 4 Collector current IC Collector current (A) Tc = 25°C (A) 5 IB = 0.2 mA 1 4 3 2 Tc = 100°C 25 −55 1 0 0 0 1 2 3 4 Collector-emitter voltage 5 6 VCE (V) 0 0 7 0.4 0.8 1.2 hFE – IC (V) VCE 5000 Collector-emitter voltage hFE DC current gain 2.8 (V) VCE – IB Tc = 100°C 25 −55 1000 500 0.1 0.3 0.5 1 Collector current 3 IC 5 2.0 IC = 6 A 5 1.6 4 3 2 1.2 1 0.8 0.3 0.4 Common emitter 10 Tc = 25°C 0 0.1 (A) 0.3 1 3 10 Base current VCE (sat) – IC IB 30 100 300 (mA) VBE (sat) – IC 10 10 Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 2.4 2.4 Common emitter 10000 VCE = 2 V 300 0.05 2.0 Base-emitter voltage VBE 20000 3000 1.6 IC/IB = 500 5 3 Tc = −55°C 1 25 0.5 100 0.3 0.1 0.3 0.5 1 Collector current 3 IC 5 Common emitter 3 Tc = −55°C 25 1 (A) 100 0.5 0.3 0.1 10 IC/IB = 500 5 0.3 0.5 1 Collector current 4 3 IC 5 10 (A) 2002-11-20 MP4503 IC – VCE −6 −1.5 Common −1.0 −0.7 −5 VCE = −2 V (A) −0.5 Tc = 25°C −0.4 IC −4 Collector current IC Collector current Common emitter emitter (A) −5 IC – VBE −6 −0.3 −3 −2 IB = −0.2 mA −1 0 0 −4 −3 Tc = 100°C −2 −1 0 −1 −2 −3 −4 −5 Collector-emitter voltage −6 VCE 0 0 −7 −0.4 (V) −0.8 −1.2 hFE – IC −2.0 −2.4 −2.8 (V) VCE – IB (V) VCE 5000 Collector-emitter voltage hFE DC current gain −1.6 −2.4 Common emitter 10000 VCE = −2 V Tc = 100°C 25 −55 1000 500 300 −0.05 −55 Base-emitter voltage VBE 20000 3000 25 −0.1 −0.3 −0.5 −1 Collector current −3 IC −5 −2.0 −1.6 IC = −6 A −5 −4 −3 −1.2 −1 −2 −0.8 −0.3 −0.4 Common emitter −10 0 −0.1 (A) Tc = 25°C −0.3 −1 −3 −10 Base current VCE (sat) – IC IB −30 −100 −300 (mA) VBE (sat) – IC Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) −10 IC/IB = 500 −5 −3 Tc = −55°C −1 25 −0.5 100 −0.3 −0.1 −0.3 −0.5 −1 Collector current −3 IC −5 Common emitter −3 Tc = −55°C 25 −1 (A) 100 −0.5 −0.3 −0.1 −10 IC/IB = 500 −5 −0.3 −0.5 −1 Collector current 5 −3 IC −5 −10 (A) 2002-11-20 MP4503 Safe Operating Area 10 Safe Operating Area (NPN Tr) −10 IC max (pulsed)* IC max (pulsed)* −5 5 3 10 ms −3 100 µs 10 ms 100 µs (A) 1 ms −1 1 IC 1 IC (A) 1 ms 0.5 Collector current Collector current (PNP Tr) 0.3 0.1 −0.5 −0.3 −0.1 −0.05 0.05 0.03 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.5 1 3 −0.03 *: Single nonrepetitive pulse Tc = 25°C VCEO max 10 30 100 Collector-emitter voltage VCE VCEO max Curves must be derated linearly with increase in temperature. −0.01 −0.5 300 −1 −3 −10 −30 Collector-emitter voltage VCE (V) −100 −300 (V) rth – tw Curves should be applied in thermal 100 Transient thermal resistance rth (°C/W) 300 (4) limited area. (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width. 30 (3) (2) (1) 10 3 -No heat sink and attached on a circuit boardNPN (1) 1 device operation PNP 1 (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 0.3 0.001 0.01 0.1 1 Pulse width Circuit board 10 tw 100 (s) PT – Ta (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board (2) (3) (4) 6 (4) PT (W) 120 Total power dissipation Junction temperature increase ∆Tj (°C) ∆Tj – PT (1) 1000 80 Circuit board Attached on a circuit board 40 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (3) 4 (2) Circuit board (1) 2 (4) 4 devices operation 0 0 2 4 6 Total power dissipation 8 PT 0 0 10 (W) 40 80 120 160 200 Ambient temperature Ta (°C) 6 2002-11-20 MP4503 Duty cycle ≤ 1% IB2 t IB2 VCC = 30 V 3 tstg 1 0.3 0.1 0.1 10 tf Output IB1 VCC = −30 V 20 µs 3 1 Input IB1 (µs) IB2 (PNP) IB2 −IB1 = IB2 = 6 mA Output Switching time Switching time IB1 IB1 10 t (µs) Duty cycle ≤ 1% Input 20 µs Switching Characteristics 30 RL IB1 = −IB2 = 6 mA (NPN) RL Switching Characteristics 30 tstg 0.3 tf ton ton 0.3 1 3 Collector current 10 IC 30 0.1 −0.1 100 −0.3 −1 −3 Collector current (A) 7 −10 IC −30 −100 (A) 2002-11-20 MP4503 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 2002-11-20