TOSHIBA TLP665JS

TLP665J(S)
TOSHIBA Photocoupler
GaAs Ired & Photo-Triac
TLP665J(S)
Unit: mm
Office Machine
Household Use Equipment
Triac Driver
Solid State Relay
TOSHIBA TLP665J(S) consists of a photo-triac optically coupled to a
gallium arsenide infrared emitting diode in a six lead plastic DIP
package.
•
Peak off-State voltage: 600V (Min.)
•
Trigger LED current: 10mA (Max.)
•
On-state current: 100mA (Max.)
•
Isolation voltage: 5000Vrms (Min.)
•
UL recognized: UL1577, file No. E67349
•
SEMCO approved:EN60065,EN60950-1,EN60335-1
•
Certificate no.708960
BSI approved: BS EN60065:2002, file No.8385
JEDEC
TOSHIBA
11-7A9
Weight: 0.39 g (Typ.)
BS EN60950-1:2002, file No.8386
•
Option(D4) type
VDE approved: DIN EN 60747-5-2
Certificate No. 40009302
Maximum operating insulation voltage : 890VPk
Highest permissible over voltage
: 8000 VPk
(Note) When an EN60747-5-2 approved type is needed, please designate the “Option(D4)”.
•Construction mechanical rating
Creepage distance
Clearance
Insulation thickness
7.62 mm pich
standard type
10.16 mm pich
TLPXXXF type
7.0 mm (Min.)
7.0 mm (Min.)
0.5 mm (Min.)
8.0 mm (Min.)
8.0 mm (Min.)
0.5 mm (Min.)
Pin configuration (top view)
1
6
2
3
1
4
1: Anode
2: Cathode
3: N.C.
4:Terminal 1
6:Terminal 2
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TLP665J(S)
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
IF
50
mA
∆IF /°C
−0.7
mA /°C
IFP
1
A
VR
5
V
VDRM
600
V
LED
Forward current
Forward current derating (Ta≥53°C)
Peak forward current (100μs pulse, 100pps)
Reverse voltage
Off-State output terminal voltage
Ta=25°C
Detector
On-state RMS current
IT(RMS)
Ta=70°C
On-state current derating (Ta≥25°C)
100
mA
50
∆IT/°C
-1.1
mA /°C
ITP
2
A
ITSM
1.2
A
Tj
115
°C
Operating temperature range
Topr
−40~100
°C
Storage temperature range
Tstg
−55~125
°C
Lead soldering temperature (10s)
Tsol
260
°C
BVS
5000
Vrms
Peak on-state current (100μs pulse, 120pps)
Peak nonrepetitive surge current (Pw=10ms,DC=10%)
Junction temperature
Isolation voltage (AC,1min. , R.H.≤60%)
(Note 2)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 2) Pins1,2 and 3 shorted together and pin4 and pin6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VAC
—
—
240
Vac
Forward current
IF
15
20
25
mA
Peak on-state current
ITP
—
—
1
A
Operating temperature
Topr
−25
—
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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TLP665J(S)
Electrical Characteristics (Ta=25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
—
—
10
μA
Capacitance
CT
V = 0, f=1MHz
—
30
—
pF
Peak off-state current
IDRM
VDRM =600V
—
10
1000
nA
Peak on-state voltage
VTM
ITM =100mA
—
1.7
3.0
V
—
1.0
—
mA
Holding current
IH
Critical rate of rise of
off-state voltage
Critical rate of rise of
commutating voltage
—
dv/dt
Vin=240Vrms , Ta=85°C
(Note3)
—
500
—
V/μs
dv/dt(c)
Vin=60Vrms , IT =15mA
(Note3)
—
0.2
—
V/μs
Min.
Typ.
Max.
Unit
5
10
mA
0.8
—
pF
—
Ω
Coupled Electrical Characteristics (Ta=25°C)
Characteristic
Symbol
Test Condition
Trigger LED current
IFT
VT =6V
—
Capacitance (input to output)
CS
VS =0 , f=1MHz
—
Isolation resistance
RS
VS =500V
BVS
10
14
5000
—
—
AC , 1second,in oil
—
10000
—
DC , 1minute,in oil
—
10000
—
AC , 1minute
Isolation voltage
1×10
12
Vrms
Vdc
(Note 3) dv/dt test circuit
Rin
+
Vcc
1
6
Vin
120Ω
+5V , VCC
2
—
3
4
RL
0V
4kΩ
dv/dt(c)
3
dv/dt
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TLP665J(S)
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TLP665J(S)
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TLP665J(S)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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