TLP763J TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP763J Office Machine Household Use Equipment Triac Driver Solid State Relay Unit: mm The TOSHIBA TLP763J consists of a GaAs infrared LED optically coupled to a zero voltage crossing turn-on photo-triac in a 6 lead plastic DIP. • Peak off-state voltage: 600 V (Min.) • Trigger LED current: 10 mA (Max.) • On-state current: 100 mA (Max.) • Isolation voltage: 4000Vrms (Min.) • UL recognized: UL1577, file No. E67349 • BSI approved: BS EN60065: 2002, Certificate No. 8945 BS EN60950-1: 2002, Certificate No. 8946 • TOSHIBA SEMKO approved: SS EN60065 (EN60065, 1993) 11−7A10 Weight: 0.42g (Typ.) SS EN60950 (EN60950, 1992) SS EN60335 (EN60335, 1988) Certificate No. 9522145 • Pin configuration (top view) Option (D4) type VDE approved: DIN EN 60747-5-2 Certificate No. 40009373 2 Maximum operating insulation voltage : 890 VPk Highest permissible over voltage 6 1 3 : 6000 VPk (Note) When an EN60747-5-2 approved type is needed, please designate the “option (D4)”. 4 ZC 1 : Anode 2 : Cathode 3 : N.C. 4 : Terminal 1 • Creepage distance 7.62mm pich TLP763J type : 7.0mm (Min.) 10.16mm pich TLP763JF type 8.0mm (Min.) Clearance : 7.0mm (Min.) 8.0mm (Min.) Internal creepage path : 4.0mm (Min.) 4.0mm (Min.) Insulation thickness 0.5mm (Min.) : 0.5mm (Min.) 1 6 : Terminal 2 2007-10-01 TLP763J Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF/°C −0.7 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VDRM 600 V Forward current LED Forward current derating (Ta ≥ 53°C) Off−state output terminal voltage Detector On−state RMS current Ta = 25°C 100 IT(RMS) Ta = 70°C mA 50 ΔIT/°C −1.1 mA/°C ITP 2 A ITSM 1.2 A Tj 115 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~100 °C Lead soldering temperature (10s) Tsol 260 °C Isolation voltage (AC, 1 min., R.H.≤ 60%) BVS 4000 Vrms On−state current derating (Ta ≥ 25°C) Peak on−state current (100μs pulse, 120pps) Peak nonrepetitive surge current (PW = 10 ms, DC = 10%) Junction temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 240 Vac Forward current IF 15 20 25 mA Peak on−state current ITP ― ― 1 A Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP763J Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Peak off−state current IDRM VDRM = 600 V ― 10 1000 nA Peak on−state voltage VTM ITM = 100 mA ― 1.7 3.0 V ― 0.6 ― mA Vin = 240 V, Ta = 85°C ― 500 ― V/μs Vin = 60Vrms , IT = 15 mA ― 0.2 ― V/μs Min. Typ. Max. Unit Holding current IH Critical rate of rise of off−state voltage dv / dt Critical rate of rise of commutating voltage dv / dt (c) ― Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Trigger LED current IFT VT = 6 V ― ― 10 mA Inhibit voltage VIH IF = rated IFT ― ― 50 V Leakage in inhibited state IIH IF = rated IFT VT = Rated VDRM ― 200 600 μA Capacitance (input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF ― Ω Isolation resistance RS VS = 500 V AC, 1 minute Isolation voltage BVS 1×10 12 10 14 4000 ― ― AC, 1 second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― 3 Vrms Vdc 2007-10-01 TLP763J IT (RMS) – Ta 200 80 160 R.M.S. on-state current IT (RMS) (mA) Allowable forward current IF (mA) IF – Ta 100 60 40 20 0 −20 120 80 40 0 40 20 60 80 100 0 −20 120 0 Ambient temperature Ta (°C) Pulse width ≤ 100μs 30 (mA) 500 Forward current IF Allowable pulse forward current IFP (mA) Ta = 25°C 50 1000 300 100 50 30 10 5 3 1 0.5 0.3 10−3 10−2 3 10−1 3 Duty cycle ratio 3 0.1 0.6 100 0.8 1.0 1.2 ∆VF / ∆Ta – IF 1.6 1.8 (V) IFP – VFP 1000 −2.8 Pulse forward current IFP (mA) Forward voltage temperature coefficient ∆VF / ∆Ta (mV / °C) 1.4 Forward voltage VF DR −3.2 −2.4 −2.0 −1.6 −1.2 −0.8 −0.4 0.1 120 IF – V F 100 Ta = 25°C 10 3 100 80 Ambient temperature Ta (°C) IFP – DR 3000 60 40 20 500 300 100 50 30 10 Pulse width ≤ 10μs 5 Repetitive frequency 3 = 100Hz Ta = 25°C 0.3 0.5 1 3 Forward current IF 5 10 1 0.6 30 50 (mA) 1.0 1.4 1.8 Pulse forward voltage 4 2.2 2.6 VFP (V) 2007-10-01 TLP763J RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-10-01