TOSHIBA TAR5S15U

TAR5S15U~TAR5S50U
TOSHIBA Bipolar Linear Integrated Circuit
Silicon Monolithic
TAR5S15U~TAR5S50U
Point Regulators (Low-Dropout Regulator)
The TAR5SxxU Series is comprised of general-purpose bipolar single-power-supply devices incorporating a
control pin which can be used to turn them ON/OFF.
Overtemperature and overcurrent protection circuits are built
in to the devices’ output circuit.
Features
•
Low stand-by current
•
Overtemperature/overcurrent protection
•
Operation voltage range is wide.
•
Maximum output current is high.
•
Difference between input voltage and output voltage is low.
•
Small package. (UFV package: Similar toSOT-353)
•
Ceramic capacitors can be used.
Weight: 0.007 g (typ.)
Pin Assignments (top view)
VIN
VOUT
5
4
1
2
CONTROL GND
3
NOISE
Overtemperature protection and overcurrent protection functions are not necessary guarantee of operating
ratings below the maximum ratings.
Do not use devices under conditions in which their maximum ratings will be exceeded.
1
2003-02-10
TAR5S15U~TAR5S50U
List of Products Number and Marking
Marking on the Product
Products No.
Marking
Products No.
Marking
TAR5S15U
1V5
TAR5S33U
3V3
TAR5S16U
1V6
TAR5S34U
3V4
TAR5S17U
1V7
TAR5S35U
3V5
TAR5S18U
1V8
TAR5S36U
3V6
TAR5S19U
1V9
TAR5S37U
3V7
TAR5S20U
2V0
TAR5S38U
3V8
TAR5S21U
2V1
TAR5S39U
3V9
TAR5S22U
2V2
TAR5S40U
4V0
TAR5S23U
2V3
TAR5S41U
4V1
TAR5S24U
2V4
TAR5S42U
4V2
TAR5S25U
2V5
TAR5S43U
4V3
TAR5S26U
2V6
TAR5S44U
4V4
TAR5S27U
2V7
TAR5S45U
4V5
TAR5S28U
2V8
TAR5S46U
4V6
TAR5S29U
2V9
TAR5S47U
4V7
TAR5S30U
3V0
TAR5S48U
4V8
TAR5S31U
3V1
TAR5S49U
4V9
TAR5S32U
3V2
TAR5S50U
5V0
Example: TAR5S30U
(3.0 V output)
3V0
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply Voltage
VIN
15
V
Output Current
IOUT
200
mA
Power Dissipation
PD
450
Operation Temp. Range
Topr
−40 to 85
°C
Storage Temp. Range
Tstg
−55 to 150
°C
(Note)
mW
Note: Mounted on a glass epoxy circuit board of 30 × 30 mm Pad dimension of 35 mm2
2
2003-02-10
TAR5S15U~TAR5S50U
TAR5S15U~TAR5S22U
Electrical Characteristic (unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA,
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Tj = 25°C)
Characteristics
Output voltage
Symbol
Test Condition
VOUT
Min
Typ.
Max
Unit
Please refer to the Output Voltage Accuracy table.
Line regulation
Reg･line
VOUT + 1 V <
= VIN <
= 15 V,
IOUT = 1 mA
Load regulation
Reg･load
1 mA <
= IOUT <
= 150 mA
⎯
25
75
IB1
IOUT = 0 mA
⎯
170
⎯
IB2
IOUT = 50 mA
⎯
550
850
VCT = 0 V
⎯
⎯
0.1
µA
⎯
30
⎯
µVrms
Quiescent current
Stand-by current
IB (OFF)
Output noise voltage
VNO
VIN = VOUT + 1 V, IOUT = 10 mA,
10 Hz <
=f<
= 100 kHz,
CNOISE = 0.01 µF, Ta = 25°C
Temperature coefficient
TCVO
−40°C <
= Topr <
= 85°C
Input voltage
VIN
Ripple rejection
R.R.
⎯
VIN = VOUT + 1 V, IOUT = 10 mA,
CNOISE = 0.01 µF, f = 1 kHz,
VRipple = 500 mVp-p, Ta = 25°C
⎯
3
15
mV
mV
µA
⎯
100
⎯
ppm/°C
2.4
⎯
15
V
⎯
70
⎯
dB
Control voltage (ON)
VCT (ON)
⎯
1.5
⎯
VIN
V
Control voltage (OFF)
VCT (OFF)
⎯
⎯
⎯
0.4
V
Control current (ON)
ICT (ON)
VCT = 1.5 V
⎯
3
10
µA
Control current (OFF)
ICT (OFF)
VCT = 0 V
⎯
0
0.1
µA
TAR5S23U~TAR5S50U
Electrical Characteristic (unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA,
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Tj = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output voltage
VOUT
Line regulation
Reg･line
VOUT + 1 V <
= VIN <
= 15 V,
IOUT = 1 mA
⎯
3
15
mV
Load regulation
Reg･load
1 mA <
= IOUT <
= 150 mA
⎯
25
75
mV
IB1
IOUT = 0 mA
⎯
170
⎯
IB2
IOUT = 50 mA
⎯
550
850
Quiescent current
Stand-by current
Output noise voltage
Dropout volatge
Temperature coefficient
IB (OFF)
VNO
VIN − VOUT
TCVO
Input voltage
VIN
Ripple rejection
R.R.
Please refer to the Output Voltage Accuracy table.
µA
VCT = 0 V
⎯
⎯
0.1
µA
VIN = VOUT + 1 V, IOUT = 10 mA,
10 Hz <
=f<
= 100 kHz,
CNOISE = 0.01 µF, Ta = 25°C
⎯
30
⎯
µVrms
IOUT = 50 mA
⎯
130
200
mV
−40°C <
= Topr <
= 85°C
⎯
100
⎯
ppm/°C
VOUT
+ 0.2 V
⎯
15
V
⎯
70
⎯
dB
⎯
VIN = VOUT + 1 V, IOUT = 10 mA,
CNOISE = 0.01 µF, f = 1 kHz,
VRipple = 500 mVp-p, Ta = 25°C
Control voltage (ON)
VCT (ON)
⎯
1.5
⎯
VIN
V
Control voltage (OFF)
VCT (OFF)
⎯
⎯
⎯
0.4
V
Control current (ON)
ICT (ON)
VCT = 1.5 V
⎯
3
10
µA
Control current (OFF)
ICT (OFF)
VCT = 0 V
⎯
0
0.1
µA
3
2003-02-10
TAR5S15U~TAR5S50U
Output Voltage Accuracy
(VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Tj = 25°C)
Product No.
Min
Typ.
Max
TAR5S15U
1.44
1.5
1.56
TAR5S16U
1.54
1.6
1.66
TAR5S17U
1.64
1.7
1.76
TAR5S18U
1.74
1.8
1.86
TAR5S19U
1.84
1.9
1.96
TAR5S20U
1.94
2.0
2.06
TAR5S21U
2.04
2.1
2.16
TAR5S22U
2.14
2.2
2.26
TAR5S23U
2.24
2.3
2.36
TAR5S24U
2.34
2.4
2.46
TAR5S25U
2.43
2.5
2.57
TAR5S26U
2.53
2.6
2.67
TAR5S27U
2.63
2.7
2.77
TAR5S28U
2.73
2.8
2.87
TAR5S29U
2.83
2.9
2.97
TAR5S30U
2.92
3.0
3.08
TAR5S31U
3.02
3.1
3.18
3.12
3.2
3.28
TAR5S33U
3.21
3.3
3.39
TAR5S34U
3.31
3.4
3.49
TAR5S35U
3.41
3.5
3.59
TAR5S36U
3.51
3.6
3.69
TAR5S37U
3.6
3.7
3.8
TAR5S38U
3.7
3.8
3.9
TAR5S39U
3.8
3.9
4.0
TAR5S40U
3.9
4.0
4.1
TAR5S41U
3.99
4.1
4.21
TAR5S42U
4.09
4.2
4.31
TAR5S43U
4.19
4.3
4.41
TAR5S44U
4.29
4.4
4.51
TAR5S45U
4.38
4.5
4.62
TAR5S46U
4.48
4.6
4.72
TAR5S47U
4.58
4.7
4.82
TAR5S48U
4.68
4.8
4.92
TAR5S49U
4.77
4.9
5.03
TAR5S50U
4.87
5.0
5.13
TAR5S32U
Symbol
VOUT
4
Unit
V
2003-02-10
TAR5S15U~TAR5S50U
Application Note
1. Recommended Application Circuit
VIN
1 µF
1 µF
VOUT
1
4
2
CONTROL GND
Control Level
Operation
HIGH
ON
LOW
OFF
3
0.01 µF
5
NOISE
The noise capacitor should be connected to NOISE pin to GND for stable operation.
The recommended value is higher than 0.0047 µF.
The figure above shows the recommended configuration for using a point regulator. Insert a capacitor for
stable input/output operation.
If the control function is not to be used, Toshiba recommend that the control pin (pin 1) be connected to the
VCC pin.
2. Power Dissipation
The power dissipation for board-mounted TAR5SxxU Series devices (rated at 450 mW) is measured using a
board whose size and pattern are as shown below. When incorporating a device belonging to this series into
your design, derate the power dissipation as far as possible by reducing the levels of parameters such as input
voltage, output current and ambient temperature. Toshiba recommend that these devices should typically be
derated to 70%~80% of their absolute maximum power dissipation value.
Thermal Resistance Evaluation Board
VIN
CIN
VOUT
COUT
CNOISE
Circuit board material: glass epoxy, Circuit board dimension:30 mm × 30 mm,
Copper foil pad area: 35 mm , t = 0.8 mm
2
CONTROL GND
NOISE
5
2003-02-10
TAR5S15U~TAR5S50U
3. Ripple Rejection
The devices of the TAR5SxxU Series feature a circuit with an excellent ripple rejection characteristic.
Because the circuit also features an excellent output fluctuation characteristic for sudden supply voltage drops,
the circuit is ideal for use in the RF blocks incorporated in all mobile telephones.
Ripple Rejection − f
TAR5S28U Input Transient Response
80
Ripple rejection (dB)
70
10 µF
60
Input voltage
3.4 V
50
2.2 µF
40
3.1 V
1 µF
2.8 V
Output voltage
30
20
10
0
10
100
VIN = 4.0 V, CNOISE = 0.01 µF,
Ta = 25°C, CIN = 1 µF,
CIN = 1 µF, Vripple = 500 mVp−p,
Iout = 10 mA, Ta = 25°C
Cout = 10 µF, CNOISE = 0.01 µF,
VIN: 3.4 V → 3.1 V, Iout = 50 mA
1k
10 k
Frequency f
0
100 k 300 k
1
2
3
(Hz)
4
5
6
7
8
9
10
Time t (ms)
4. NOISE Pin
TAR5SxxU Series devices incorporate a NOISE pin to reduce output noise voltage. Inserting a capacitor
between the NOISE pin and GND reduces output noise. To ensure stable operation, insert a capacitor of
0.0047 µF or more between the NOISE pin and GND.
The output voltage rise time varies according to the capacitance of the capacitor connected to the NOISE
pin.
CNOISE − VN
Turn On Waveform
2
CIN = 1 µF, Cout = 10 µF,
Iout = 10 mA, Ta = 25°C
Control voltage
VCT (ON) (V)
50
Control voltage waveform
40
30
20
TAR5S50
TAR5S30
10
0
0.001 µ
1
0
CNOISE = 0.01 µF
3
Output voltage
VOUT (V)
Output noise voltage VN (µV)
60
TAR5S15
0.01 µ
0.1 µ
NOISE capacitance CNOISE (F)
1 µF
2
0.33 µF
0.1 µF
1
0
−10
1.0 µ
Output voltage waveform
CIN = 1 µF, Cout = 10 µF,
Iout = 50 mA, Ta = 25°C
0
10
20
30
40
50
60
70
80
90
Time t (ms)
6
2003-02-10
TAR5S15U~TAR5S50U
5. Example of Characteristics when Ceramic Capacitor is Used
Shown below is the stable operation area, where the output voltage does not oscillate, evaluated using a
Toshiba evaluation circuit. The equivalent series resistance (ESR) of the output capacitor and output current
determines this area. TAR5SxxU Series devices operate stably even when a ceramic capacitor is used as the
output capacitor.
If a ceramic capacitor is used as the output capacitor and the ripple frequency is 30 kHz or more, the ripple
rejection differs from that when a tantalum capacitor is used. This is shown below.
Toshiba recommend that users check that devices operate stably under the intended conditions of use.
Examples of safe operating area characteristics
(TAR5S15U)Stable Operating Area
(TAR5S50U)Stable Operating Area
100
Equivalent series resistance ESR (Ω)
Equivalent series resistance ESR (Ω)
100
10
1
Stable Operating Area
@VIN = 2.5 V, CNOISE = 0.01 µF,
0.1
CIN = 1 µF, Cout = 1 µF~10 µF,
Ta = 25°C
0.02
0
20
40
60
80
Output current
100
IOUT
120
10
Stable Operating Area
1
CIN = 1 µF, Cout = 1 µF~10 µF,
Ta = 25°C
0.02
0
140 150
@VIN = 6.0 V, CNOISE = 0.01 µF,
0.1
(mA)
20
40
60
80
Output current
100
IOUT
120
140 150
(mA)
(TAR5S28U)Stable Operating Area
Evaluation Circuit for Stable Operating Area
Equivalent series resistance ESR (Ω)
100
CONTROL
10
TAR5S**U
Stable Operating Area
VIN = VOUT
+1V
1
CIN
Ceramic
GND
CNOISE = 0.01 µF
COUT
Ceramic
ROUT
ESR
@VIN = 3.8 V, CNOISE = 0.01 µF,
0.1
CIN = 1 µF, Cout = 1 µF~10 µF,
Ta = 25°C
0.02
0
20
40
60
80
Output current
100
IOUT
120
140 150
Capacitors used for evaluation
Made by Murata CIN: GRM40B105K
COUT: GRM40B105K/GRM40B106K
(mA)
Ripple Rejection Characteristic (f = 10 kHz~300 kHz)
(TAR5S30U) Ripple Rejection – f
70
Ceramic 10 µF
Tantalum10 µF
Ripple rejection (dB)
60
Ceramic
2.2 µF
Ceramic
1 µF
50
40
Tantalum 2.2 µF
Tantalum 1 µF
30
20
@VIN = 4.0 V, CNOISE = 0.01 µF,
10
0
10 k
CIN = 1 µF, Vripple = 500 mVp-p,
Iout = 10 mA, Ta = 25°C
100 k
Frequency f
300 k
1000 k
(Hz)
7
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S15U)
IOUT – VOUT
(TAR5S18U)
VIN = 2.5 V, CIN = 1 µF, COUT = 10 µF,
VIN = 2.8 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
CNOISE = 0.01 µF, Pulse width = 1 ms
Ta = 85°C
25
1.5
−40
1.4
0
50
100
Output current
(TAR5S20U)
IOUT
Ta = 85°C
25
1.8
−40
1.7
0
150
(mA)
50
100
Output current
IOUT – VOUT
(TAR5S21U)
2.1
IOUT
150
(mA)
IOUT – VOUT
2.2
VIN = 3.0 V, CIN = 1 µF, COUT = 10 µF,
VIN = 3.1 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
Output voltage VOUT (V)
IOUT – VOUT
1.9
Output voltage VOUT (V)
Output voltage VOUT (V)
1.6
Ta = 85°C
2.0
25
−40
1.9
0
50
100
Output current
(TAR5S22U)
IOUT
Ta = 85°C
2.1
25
−40
2.0
0
150
(mA)
50
100
Output current
IOUT – VOUT
(TAR5S23U)
IOUT
150
(mA)
IOUT – VOUT
VIN = 3.2 V, CIN = 1 µF, COUT = 10 µF,
VIN = 3.3 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
Output voltage VOUT (V)
2.3
Ta = 85°C
2.2
25
−40
2.1
0
50
Output current
100
IOUT
Ta = 85°C
2.3
25
−40
2.2
0
150
(mA)
50
Output current
8
100
IOUT
150
(mA)
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S25U)
IOUT – VOUT
(TAR5S27U)
VIN = 2.6 V, CIN = 1 µF, COUT = 10 µF,
VIN = 3.7 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
CNOISE = 0.01 µF, Pulse width = 1 ms
Ta = 85°C
2.5
25
−40
2.4
0
50
100
Output current
(TAR5S28U)
IOUT
25
−40
(mA)
50
100
Output current
IOUT – VOUT
(TAR5S29U)
IOUT
150
(mA)
IOUT – VOUT
3
VIN = 3.8 V, CIN = 1 µF, COUT = 10 µF,
VIN = 3.9 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF
CNOISE = 0.01 µF
Pulse width = 1 ms
Output voltage VOUT (V)
Output voltage VOUT (V)
Ta = 85°C
2.7
2.6
0
150
2.9
Ta = 85°C
2.8
25
−40
2.7
0
50
100
Output current
(TAR5S30U)
IOUT
Ta = 85°C
25
−40
(mA)
50
100
Output current
(TAR5S31U)
IOUT – VOUT
IOUT
150
(mA)
IOUT – VOUT
3.2
VIN = 4.0 V, CIN = 1 µF, COUT = 10 µF,
VIN = 4.1 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
Pulse width = 1 ms
Ta = 85°C
3.0
25
−40
2.9
0
Pulse width = 1 ms
2.9
2.8
0
150
3.1
Output voltage VOUT (V)
IOUT – VOUT
2.8
Output voltage VOUT (V)
Output voltage VOUT (V)
2.6
50
Output current
100
IOUT
Ta = 85°C
3.1
25
−40
3.0
0
150
(mA)
50
Output current
9
100
IOUT
150
(mA)
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S32U)
(TAR5S33U)
IOUT – VOUT
VIN = 4.3 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
Output voltage VOUT (V)
VIN = 4.2 V, CIN = 1 µF, COUT = 10 µF,
Ta = 85°C
3.2
25
−40
3.1
0
50
100
Output current
(TAR5S35U)
IOUT
3.3
25
−40
(mA)
50
100
Output current
IOUT – VOUT
(TAR5S45U)
IOUT
150
(mA)
IOUT – VOUT
4.6
VIN = 4.5 V, CIN = 1 µF, COUT = 10 µF,
VIN = 5.5 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF
CNOISE = 0.01 µF, Pulse width = 1 ms
Pulse width = 1 ms
Output voltage VOUT (V)
Output voltage VOUT (V)
Ta = 85°C
3.2
0
150
3.6
Ta = 85°C
3.5
25
−40
3.4
0
50
100
Output current
(TAR5S48U)
IOUT
4.5
25
−40
50
100
Output current
(mA)
IOUT – VOUT
(TAR5S50U)
IOUT
150
(mA)
IOUT – VOUT
5.1
VIN = 5.8 V, CIN = 1 µF, COUT = 10 µF,
VIN = 6.0 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF
CNOISE = 0.01 µF
Output voltage VOUT (V)
Pulse width = 1 ms
Ta = 85°C
4.8
25
−40
4.7
0
Ta = 85°C
4.4
0
150
4.9
Output voltage 圧 VOUT (V)
IOUT – VOUT
3.4
3.3
50
Output current
100
IOUT
Ta = 85°C
5.0
25
−40
4.9
0
150
50
Output current
(mA)
10
Pulse width = 1 ms
100
IOUT
150
(mA)
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S15U)
(TAR5S18U)
IB – VIN
10
Bias current IB
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
Bias current IB
IB – VIN
10
5
5
IOUT = 150 mA
IOUT = 150 mA
100
100
1
50
0
0
5
10
Input voltage
(TAR5S20U)
15
VIN (V)
(TAR5S21U)
IB – VIN
10
15
VIN (V)
IB – VIN
10
Bias current IB
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
Bias current IB
5
Input voltage
10
5
5
IOUT = 150 mA
IOUT = 150 mA
100
100
50
0
0
5
(TAR5S22U)
50
1
10
Input voltage
0
0
15
VIN (V)
5
(TAR5S23U)
IB – VIN
1
10
Input voltage
10
15
VIN (V)
IB – VIN
10
Bias current IB
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
Bias current IB
1
50
0
0
5
5
IOUT = 150 mA
IOUT = 150 mA
100
100
50
0
0
5
Input voltage
10
50
1
0
0
15
VIN (V)
5
Input voltage
11
10
1
15
VIN (V)
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S25U)
(TAR5S27U)
IB – VIN
10
Bias current IB
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
Bias current IB
IB – VIN
10
5
5
IOUT = 150 mA
IOUT = 150 mA
100
100
50
0
0
5
10
Input voltage
(TAR5S28U)
1
15
VIN (V)
(TAR5S29U)
IB – VIN
10
15
VIN (V)
IB – VIN
10
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
Bias current IB
(mA)
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
Bias current IB
5
Input voltage
10
5
5
IOUT = 150 mA
IOUT = 150 mA
100
100
50
0
0
5
(TAR5S30U)
50
1
10
Input voltage
0
0
15
VIN (V)
5
IB – VIN
(TAR5S31U)
1
10
Input voltage
10
15
VIN (V)
IB – VIN
10
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
Bias current IB
(mA)
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
Bias current IB
1
50
0
0
5
5
IOUT = 150 mA
IOUT = 150 mA
100
100
50
0
0
5
Input voltage
10
50
1
0
0
15
VIN (V)
5
Input voltage
12
10
1
15
VIN (V)
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S32U)
(TAR5S33U)
IB – VIN
10
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
Bias current IB
(mA)
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
Bias current IB
IB – VIN
10
5
IOUT = 150 mA
5
IOUT = 150 mA
100
100
50
0
0
5
10
Input voltage
(TAR5S35U)
0
0
15
VIN (V)
(TAR5S45U)
IB – VIN
10
15
VIN (V)
IB – VIN
10
Bias current IB
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
(mA)
CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
Bias current IB
5
Input voltage
10
5
5
IOUT = 150 mA
IOUT = 150 mA
100
100
50
0
0
5
(TAR5S48U)
1
10
Input voltage
50
0
0
15
VIN (V)
5
IB – VIN
(TAR5S50U)
1
10
Input voltage
10
15
VIN (V)
IB – VIN
10
CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF
Pulse width = 1 ms
Pulse width = 1 ms
(mA)
CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF
Bias current IB
(mA)
Bias current IB
1
50
1
5
5
IOUT = 150 mA
IOUT = 150 mA
100
100
50
0
0
5
Input voltage
10
1
50
0
0
15
VIN (V)
5
Input voltage
13
10
1
15
VIN (V)
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S15U)
6
(TAR5S18U)
VOUT – VIN
6
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
CNOISE = 0.01 µF, Pulse width = 1 ms
5
Output voltage VOUT (V)
Output voltage VOUT (V)
5
4
3
2
1
4
3
2
1
0
0
5
10
Input voltage
(TAR5S20U)
6
0
0
15
VIN (V)
(TAR5S21U)
VOUT – VIN
6
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
10
15
VIN (V)
VOUT – VIN
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
5
Output voltage VOUT (V)
5
Output voltage VOUT (V)
5
Input voltage
CNOISE = 0.01 µF, Pulse width = 1 ms
4
3
2
1
4
3
2
1
0
0
5
10
Input voltage
(TAR5S22U)
6
0
0
15
VIN (V)
(TAR5S23U)
VOUT – VIN
6
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
10
15
VIN (V)
VOUT – VIN
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
5
Output voltage VOUT (V)
5
4
3
2
1
0
0
5
Input voltage
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
VOUT – VIN
4
3
2
1
5
Input voltage
10
0
0
15
VIN (V)
5
Input voltage
14
10
15
VIN (V)
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S25U)
6
(TAR5S27U)
VOUT – VIN
6
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
CNOISE = 0.01 µF, Pulse width = 1 ms
5
Output voltage VOUT (V)
Output voltage VOUT (V)
5
4
3
2
1
4
3
2
1
0
0
5
10
Input voltage
(TAR5S28U)
6
0
0
15
VIN (V)
(TAR5S29U)
VOUT – VIN
6
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
10
15
VIN (V)
VOUT – VIN
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
5
Output voltage VOUT (V)
5
Output voltage VOUT (V)
5
Input voltage
CNOISE = 0.01 µF, Pulse width = 1 ms
4
3
2
1
4
3
2
1
0
0
5
10
Input voltage
(TAR5S30U)
6
0
0
15
VIN (V)
(TAR5S31U)
VOUT – VIN
6
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
10
15
VIN (V)
VOUT – VIN
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
5
Output voltage VOUT (V)
5
4
3
2
1
0
0
5
Input voltage
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
VOUT – VIN
4
3
2
1
5
Input voltage
10
0
0
15
VIN (V)
5
Input voltage
15
10
15
VIN (V)
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S32U)
6
(TAR5S33U)
VOUT – VIN
6
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
CNOISE = 0.01 µF, Pulse width = 1 ms
5
Output voltage VOUT (V)
Output voltage VOUT (V)
5
4
3
2
0
0
5
10
Input voltage
(TAR5S35U)
3
2
0
0
15
VIN (V)
VOUT – VIN
(TAR5S45U)
6
6
5
5
4
3
2
1
10
Input voltage
(TAR5S48U)
CNOISE = 0.01 µF, Pulse width = 1 ms
15
VIN (V)
(TAR5S50U)
5
Output voltage VOUT (V)
5
4
3
2
15
VIN (V)
VOUT – VIN
3
2
CNOISE = 0.01 µF, Pulse width = 1 ms
10
10
4
1
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
Input voltage
5
Input voltage
VOUT – VIN
5
VOUT – VIN
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
0
0
6
0
0
VIN (V)
2
6
1
15
3
CNOISE = 0.01 µF, Pulse width = 1 ms
5
10
4
1
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
0
0
5
Input voltage
Output voltage VOUT (V)
Output voltage VOUT (V)
4
1
1
Output voltage VOUT (V)
VOUT – VIN
IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
0
0
15
VIN (V)
5
Input voltage
16
10
15
VIN (V)
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S15U)
(TAR5S18U)
VOUT – Ta
1.6
VIN = 2.5 V, CIN = 1 µF, COUT = 10 µF,
VIN = 2.8 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
Output voltage VOUT (V)
CNOISE = 0.01 µF, Pulse width = 1 ms
1.55
IOUT = 50 mA
1.5
100 150
1.45
1.4
−50
−25
0
25
Ambient temperature
(TAR5S20U)
50
75
1.85
IOUT = 50 mA
1.8
100 150
1.75
1.7
−50
100
Ta (°C)
−25
0
(TAR5S21U)
VOUT – Ta
50
75
100
Ta (°C)
VOUT – Ta
2.2
VIN = 3.0 V, CIN = 1 µF, COUT = 10 µF,
VIN = 3.1 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
25
Ambient temperature
2.1
2.05
IOUT = 50 mA
2.0
150
100
1.95
1.9
−50
−25
0
25
Ambient temperature
(TAR5S22U)
50
75
2.15
IOUT = 50 mA
2.1
Ta (°C)
−25
0
(TAR5S23U)
VOUT – Ta
75
100
Ta (°C)
VOUT – Ta
VIN = 3.3 V, CIN = 1 µF, COUT = 10 µF,
Output voltage VOUT (V)
CNOISE = 0.01 µF, Pulse width = 1 ms
2.25
2.1
−50
50
2.4
CNOISE = 0.01 µF, Pulse width = 1 ms
2.15
25
Ambient temperature
VIN = 3.2 V, CIN = 1 µF, COUT = 10 µF,
2.2
150
100
2.05
2.0
−50
100
2.3
Output voltage VOUT (V)
VOUT – Ta
1.9
IOUT = 50 mA
150
100
−25
0
25
Ambient temperature
50
75
2.35
2.3
Ta (°C)
150
100
2.25
2.2
−50
100
IOUT = 50 mA
−25
0
25
Ambient temperature
17
50
75
100
Ta (°C)
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S25U)
(TAR5S27U)
VOUT – Ta
2.6
VIN = 3.5 V, CIN = 1 µF, COUT = 10 µF,
VIN = 3.7 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
Output voltage VOUT (V)
CNOISE = 0.01 µF, Pulse width = 1 ms
2.55
IOUT = 50 mA
2.5
100
150
2.45
2.4
−50
−25
0
25
Ambient temperature
(TAR5S28U)
50
75
2.75
2.7
IOUT = 50 mA
100
Ta (°C)
−25
0
25
Ambient temperature
(TAR5S29U)
VOUT – Ta
50
75
100
Ta (°C)
VOUT – Ta
3.0
VIN = 3.8 V, CIN = 1 µF, COUT = 10 µF,
VIN = 3.9 V, CIN = 1 µF, COUT = 10 µF,
Pulse width = 1 ms
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
CNOISE = 0.01 µF
Output voltage VOUT (V)
150
2.65
2.6
−50
100
2.9
2.85
IOUT = 50 mA
2.8
150
100
2.75
2.7
−50
−25
0
25
Ambient temperature
(TAR5S30U)
50
75
2.95
IOUT = 50 mA
2.9
100
Ta (°C)
−25
0
(TAR5S31U)
VOUT – Ta
75
100
Ta (°C)
VOUT – Ta
VIN = 4.1 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
Pulse width = 1 ms
3.05
2.9
−50
50
3.2
CNOISE = 0.01 µF
2.95
25
Ambient temperature
VIN = 4 V, CIN = 1 µF, COUT = 10 µF,
3.0
150
2.85
2.8
−50
100
3.1
Output voltage VOUT (V)
VOUT – Ta
2.8
IOUT = 50 mA
150
100
−25
0
25
Ambient temperature
50
75
3.15
3.1
3.05
3.0
−50
100
Ta (°C)
IOUT = 50 mA
150
100
−25
0
25
Ambient temperature
18
50
75
100
Ta (°C)
2003-02-10
TAR5S15U~TAR5S50U
(TAR5S32U)
(TAR5S33U)
VOUT – Ta
VIN = 4.3 V, CIN = 1 µF, COUT = 10 µF,
VIN = 4.2 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
Output voltage VOUT (V)
CNOISE = 0.01 µF, Pulse width = 1 ms
3.25
IOUT = 50 mA
3.2
3.15
150
100
3.1
−50
−25
0
25
Ambient temperature
(TAR5S35U)
50
75
3.35
3.3
IOUT = 50 mA
Ta (°C)
−25
0
(TAR5S45U)
VOUT – Ta
50
75
100
Ta (°C)
VOUT – Ta
4.6
VIN = 5.5 V, CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
CNOISE = 0.01 µF, Pulse width = 1 ms
Output voltage VOUT (V)
25
Ambient temperature
VIN = 4.5 V, CIN = 1 µF, COUT = 10 µF,
3.55
IOUT = 50 mA
3.45
150
100
3.4
−50
−25
0
25
Ambient temperature
(TAR5S48U)
50
75
4.55
4.5
IOUT = 50 mA
4.45
150
100
4.4
−50
100
Ta (°C)
−25
0
25
Ambient temperature
(TAR5S50U)
VOUT – Ta
4.9
50
75
100
Ta (°C)
VOUT – Ta
5.1
VIN = 5.8 V, CIN = 1 µF, COUT = 10 µF,
VIN = 6 V, CIN = 1 µF, COUT = 10 µF,
Pulse width = 1 ms
CNOISE = 0.01 µF
Output voltage VOUT (V)
CNOISE = 0.01 µF
Output voltage VOUT (V)
150
100
3.25
3.2
−50
100
3.6
3.5
VOUT – Ta
3.4
3.3
4.85
4.8
IOUT = 50 mA
4.75
150
5
IOUT = 50 mA
4.95
150
100
4.7
−50
−25
Pulse width = 1 ms
5.05
100
0
25
Ambient temperature
50
75
4.9
−50
100
Ta (°C)
−25
0
25
Ambient temperature
19
50
75
100
Ta (°C)
2003-02-10
TAR5S15U~TAR5S50U
IB – Ta
0.6
VIN = VOUT + 1 V, CIN = 1 µF,
COUT = 10 µF, CNOISE = 0.01 µF
Pulse width = 1 ms
IOUT = 150 mA
Dropout voltage VIN - VOUT (V)
Bias current
IB (mA)
2.5
2
1.5
100
1
50
0.5
10
0.5
CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF
Pulse width = 1 ms
0.4
IOUT = 150 mA
0.3
100
0.2
50
0.1
10
1
1
0
−50
−25
0
25
50
Ambient temperature
75
0
−50
100
−25
0
25
CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01µF
Pulse width = 1 ms
2.0
100
Ta (°C)
Ta = 25°C
0.3
−40
0.2
0.1
VIN = VOUT + 1 V,
CIN = 1 µF, COUT = 10 µF,
CNOISE = 0.01 µF
−40
Pulse width = 1 ms
(mA)
85
Ta = 25°C
1.5
85
1.0
0.5
0
0
50
100
Output current
IOUT
0
0
150
50
(mA)
Turn On Waveform
1
0
VIN = VOUT + 1 V,
VCT (ON) = 0 → 1.5 V, CIN = 1 µF,
COUT = 10 µF, CNOISE =
0.01 µF
Output voltage
VOUT (V)
Ta = 25°C
85
0
VIN = VOUT + 1 V,
VCT (ON) = 1.5 → 0 V, CIN = 1 µF,
2
COUT = 10 µF, CNOISE =
0.01 µF
1
Control voltage waveform
0
3
2
0
(mA)
Output voltage waveform
−40
1
Control voltage
VCT (ON) (V)
Control voltage waveform
3
IOUT
150
Turn Off Waveform
3
2
100
Output current
3
Control voltage
VCT (ON) (V)
75
IB – IOUT
2.5
Bias current IB
Dropout voltage VIN - VOUT (V)
0.4
50
Ambient temperature
Ta (°C)
(TAR5S23U~TAR5S50U) VIN - VOUT – IOUT
0.5
Output voltage
VOUT (V)
VIN - VOUT – Ta
(TAR5S23U~TAR5S50U)
3
1
2
1
Output voltage waveform
0
0
Time t (ms)
1
Time t (ms)
20
2003-02-10
TAR5S15U~TAR5S50U
Ripple Rejection – f
VN – f
80
10
TAR5S25U (2.5 V)
TAR5S30U (3.0 V)
TAR5S15U (1.5 V)
70
COUT = 10 µF, CNOISE = 0.01 µF,
10 Hz < f < 100 kHz, Ta = 25°C
1
60
Ripple rejection (dB)
Output noise voltage VN (µV/√ Hz )
VIN = VOUT + 1 V, IOUT = 10 mA, CIN = 1 µF,
0.1
0.01
TAR5S45U (4.5 V)
50
TAR5S50U (5.0 V)
40
TAR5S35U (3.5 V)
30
20
VIN = VOUT + 1 V, IOUT = 10 mA, CIN = 1 µF,
10 COUT = 10 µF, CNOISE = 0.01 µF,
VRipple = 500 mVp-p, Ta = 25°C
0.001
10
100
1k
Frequency f
10 k
0
10
100 k
100
1k
Frequency f
(Hz)
10 k
100 k
1000 k
(Hz)
PD – Ta
Power dissipation PD
(mW)
500
400
300
200
Circuit board material: glass epoxy, Circuit
board dimention:
30 mm × 30 mm, 2
pad area: 35 mm (t = 0.8 mm)
100
−40
0
40
Ambient temperature
80
120
Ta (°C)
21
2003-02-10
TAR5S15U~TAR5S50U
Package Dimensions
Weight: 0.007 g (typ.)
22
2003-02-10
TAR5S15U~TAR5S50U
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2003-02-10