MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4006 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 10 pins) • High collector power dissipation (4-device operation) Unit: mm : IC (DC) = ±2 A (max) • High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating NPN PNP Unit Collector-base voltage VCBO 80 −80 V Collector-emitter voltage VCEO 80 −80 V Emitter-base voltage VEBO 8 −8 V DC IC 2 −2 Pulse ICP 3 −3 IB 0.5 −0.5 Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Junction temperature Storage temperature range A JEDEC ― A JEITA ― TOSHIBA PC 2.0 W PT 4.0 W Tj 150 °C Tstg −55 to 150 °C 2-25A1B Weight: 2.1 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-10-27 MP4006 Array Configuration 10 R1 R2 8 6 7 9 3 5 2 4 R1 R2 R1 ≈ 4 kΩ 1 R2 ≈ 800 Ω Thermal Characteristics Characteristics Thermal resistance from junction to ambient Symbol Max Unit ΣRth (j-a) 31.3 °C/W TL 260 °C (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 A ― ― 10 μA Collector cut-off current ICEO VCE = 80 V, IB = 0 A ― ― 10 μA Emitter cut-off current IEBO VEB = 8 V, IC = 0 A 0.8 ― 4.0 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 80 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 80 ― ― V hFE VCE = 2 V, IC = 1 A 2000 ― ― ― Collector-emitter VCE (sat) IC = 1 A, IB = 1 mA ― ― 1.5 Base-emitter VBE (sat) IC = 1 A, IB = 1 mA ― ― 2.0 VCE = 2 V, IC = 0.5 A ― 100 ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 20 ― pF ― 0.4 ― ― 4.0 ― ― 0.6 ― Saturation voltage Transition frequency Collector output capacitance Turn-on time fT Cob ton Input 20 μs Storage time IB2 tstg IB2 IB1 Switching time Fall time IB1 Output 30 Ω DC current gain V μs VCC = 30 V tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% 2 2006-10-27 MP4006 Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −80 V, IE = 0 A ― ― −10 μA Collector cut-off current ICEO VCE = −80 V, IB = 0 A ― ― −10 μA Emitter cut-off current IEBO VEB = −8 V, IC = 0 A −0.8 ― −4.0 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −80 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 A −80 ― ― V hFE VCE = −2 V, IC = −1 A 2000 ― ― ― Collector-emitter VCE (sat) IC = −1 A, IB = −1 mA ― ― −1.5 Base-emitter VBE (sat) IC = −1 A, IB = −1 mA ― ― −2.0 VCE = −2 V, IC = −0.5 A ― 50 ― MHz VCB = −10 V, IE = 0 A, f = 1 MHz ― 30 ― pF ― 0.4 ― ― 2.0 ― ― 0.4 ― Transition frequency fT Collector output capacitance Cob ton IB1 Turn-on time IB2 Saturation voltage Switching time Storage time tstg Input 20 μs IB2 Output 30 Ω DC current gain IB1 V μs VCC = −30 V Fall time tf −IB1 = IB2 = 1 mA, duty cycle ≤ 1% Marking MP4006 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 3 2006-10-27 MP4006 (NPN transistor) IC – VCE IC – VBE 3.2 3.2 0.5 2 VCE = 2 V Ta = 25°C (A) 2.4 0.23 0.21 1.6 0.2 IB = 0.19 mA 0.8 2.4 Collector current IC (A) Collector current IC Common emitter Common emitter 0.3 0 0 0 2 4 6 8 Collector-emitter voltage 1.6 0.8 0 0 10 0.8 VCE (V) −55 25 Ta = 100°C 1.6 2.4 Base-emitter voltage hFE – IC 3.2 VBE (V) VCE – IB 2.4 10000 VCE = 2 V 3000 −55 25 Collector-emitter voltage Ta = 100°C 1000 500 300 100 0.03 0.05 0.1 0.3 0.5 1 Collector current IC 3 5 10 Common emitter Ta = 25°C 2.0 1.6 2.0 2.5 IC = 3 A 1.5 1.2 1 0.5 0.8 0.1 0.4 ) DC current gain hFE VCE (V) Common emitter 5000 4.0 0 0.1 (A) 1 10 100 500 Base current IB (mA) VCE (sat) – IC 3 1 VBE (sat) – IC 5 Common emitter IC/IB = 500 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 5 Ta = −55°C 25 0.5 0.3 100 0.3 0.5 1 Collector current IC 3 Ta = −55°C 25 1 0.5 0.3 0.1 3 (A) 100 Common emitter IC/IB = 500 0.3 0.5 1 Collector current IC 4 3 (A) 2006-10-27 MP4006 (PNP transistor) IC – VCE IC – VBE −3.2 −3.2 −1 −0.4 Common emitter Common emitter VCE = −2 V (A) −2.4 −0.3 −0.25 −1.6 −0.2 −0.8 −2.4 Collector current IC Collector current IC (A) Ta = 25°C IB = −0.17 mA −1.6 0 0 0 −2 −4 −6 Collector-emitter voltage −8 Ta = 100°C −0.8 0 0 −10 25 −0.8 VCE (V) −55 −1.6 Base-emitter voltage hFE – IC −3.2 −4.0 VBE (V) VCE – IB 10000 −2.4 VCE (V) Common emitter 5000 V CE = −2 V 3000 Ta = 100°C Collector-emitter voltage 25 1000 −55 500 300 100 −0.03 −0.1 −0.3 −0.5 −1 Collector current IC −3 −5 −10 Common emitter Ta = 25°C −2.0 −1.6 −2.0 −2.5 IC = −3 A −1.5 −1.2 −1.0 −0.8 −0.1 −0.4 −0.5 ) DC current gain hFE −2.4 0 −0.1 (A) −1 −10 −100 −500 Base current IB (mA) VCE (sat) – IC −3 −1 VBE (sat) – IC −5 Common emitter IC/IB = 500 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) −5 Ta = −55°C 25 −0.5 −0.3 −0.1 100 −0.3 −0.5 −1 Collector current IC −3 Ta = −55°C 25 −1 −0.5 −0.3 −0.1 −3 (A) 100 Common emitter IC/IB = 500 −0.3 −0.5 −1 Collector current IC 5 −3 (A) 2006-10-27 MP4006 rth – tw Curves should be applied in thermal Transient thermal resistance rth (°C/W) 100 30 (4) limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (3) (1) (2) 10 3 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation Circuit board (4) 4-device operation NPN PNP 1 0.5 0.001 0.01 0.1 1 10 Pulse width 1000 100 tw (s) Safe Operating Area (NPN Tr) PT – Ta (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-devics operation Attached on a circuit board IC max (pulsed)* 100 μs* 10 ms* 1 PT (W) 3 8 1 ms* Total power dissipation Transient thermal resistance rth (°C/W) 5 0.5 0.3 0.1 0.05 0.03 1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 3 5 10 VCEO max 30 50 100 6 4 Circuit board (3) (2) 2 (1) 0 0 300 (4) 40 Collector-emitter voltage VCE (V) Junction temperature increase ΔTj (°C) Transient thermal resistance rth (°C/W) 10 ms* −1 100 μs* 1 ms* −0.5 −0.3 −0.03 −1 160 200 160 I max (pulsed)* −3 C −0.05 120 ΔTj – PT Safe Operating Area (NPN Tr) −5 −0.1 80 Ambient temperature Ta (°C) *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −3 −5 −10 VCEO max −30 −50 −100 (1) Collector-emitter voltage VCE (V) (3) Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-devices operation (3) 3-devices operation (4) 4-devices operation 1 2 3 Total power dissipation 6 (4) 80 0 0 −300 (2) 120 4 PT 5 (W) 2006-10-27 MP4006 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-10-27