MP6901 TOSHIBA Power Transistor Module Silicon Epitaxial Type (Six Darlington Power Transistors in One) MP6901 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins) • High collector power dissipation (6-device operation) • High collector current: IC (DC) = ±4 A (max) • High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Unit: mm : PT = 5 W (Ta = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating NPN PNP Unit Collector-base voltage VCBO 100 −100 V Collector-emitter voltage VCEO 80 −80 V Emitter-base voltage VEBO 5 −5 V IC 4 −4 ICP 6 −6 IB 0.4 −0.4 Collector current Continuous base current Collector power dissipation PC (1-device operation) Collector power dissipation Ta = 25°C (6-device operation) Tc = 25°C 3.0 A JEDEC ― JEITA ― TOSHIBA A 2-32B1D Weight: 6.0 g (typ.) W 5.0 W PT 25 Isolation voltage Junction temperature Storage temperature range VIsol 1000 V Tj 150 °C Tstg −55 to 150 °C Array Configuration 12 R1 R2 4 2 7 10 3 6 4 8 9 R1 R2 11 1 R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω 1 2004-07-01 MP6901 Marking MP6901 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance from junction to ambient Symbol Max Unit ΣRth (j-a) 25 °C/W ΣRth (j-c) 5.0 °C/W TL 260 °C (6-device operation, Ta = 25°C) Thermal resistance from junction to case (6device operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 A ― ― 20 μA Collector cut-off current ICEO VCE = 80 V, IB = 0 A ― ― 20 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 A 0.5 ― 2.5 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 80 ― ― V hFE (1) VCE = 2 V, IC = 1 A 2000 ― ― hFE (2) VCE = 2 V, IC = 3 A 1000 ― ― DC current gain Collector-emitter VCE (sat) IC = 3 mA, IB = 6 mA ― ― 1.5 Base-emitter VBE (sat) IC = 3 mA, IB = 6 mA ― ― 2.0 fT VCE = 2 V, IC = 0.5 A ― 60 ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 35 ― pF ― 0.2 ― ― 1.5 ― ― 0.6 ― Transition frequency Collector output capacitance Turn-on time Cob ton Input 20 μs Storage time IB2 tstg IB2 IB1 Switching time Fall time IB1 Output 10 Ω Saturation voltage ― V μs VCC = 30 V tf IB1 = −IB2 = 6 mA, duty cycle ≤ 1% 2 2004-07-01 MP6901 Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 4 A Surge current IFSM t = 1 s, 1 shot ― ― 6 A IF = 1 A, IB = 0 A ― ― 2.0 V Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 4 A, VBE = −3 V, dIF/dt = −50 A/μs ― 1.0 ― μs ― 8 ― μC Min Typ. Max Unit Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = −100 V, IE = 0 A ― ― −20 μA Collector cut-off current ICEO VCE = −80 V, IB = 0 A ― ― −20 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 A −0.5 ― −2.5 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 A −80 ― ― V hFE (1) VCE = −2 V, IC = −1 A 2000 ― ― hFE (2) VCE = −2 V, IC = −3 A 1000 ― ― Collector-emitter VCE (sat) IC = −3 A, IB = −6 mA ― ― −1.5 Base-emitter VBE (sat) IC = −3 A, IB = −6 mA ― ― −2.0 VCE = −2 V, IC = −0.5 A ― 40 ― MHz VCB = −10 V, IE = 0 A, f = 1 MHz ― 60 ― pF ― 0.15 ― ― 0.80 ― ― 0.40 ― Saturation voltage Transition frequency Collector output capacitance ton IB1 Turn-on time fT Cob Switching time Storage time tstg Input 20 μs Output IB2 10 Ω DC current gain IB1 ― V μs VCC = −30 V Fall time tf −IB1 = IB2 = 6 mA, duty cycle ≤ 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 4 A Surge current IFSM t = 1 s, 1 shot ― ― 6 A IF = 1 A, IB = 0 A ― ― 2.0 V ― 1.0 ― μs ― 8 ― μC Forward voltage VF Reverse recovery time trr Reverse recovery charge Qrr IF = 4 A, VBE = 3 V, dIF/dt = −50 A/μs 3 2004-07-01 MP6901 (NPN transistor) IC – VCE IC – VBE 6 6 Common 5 Common emitter emitter 4 0.3 3 0.23 2 Collector current IC Collector current IC (A) Tc = 25°C 5 VCE = 2 V 0.5 1 (A) 5 IB = 0.2 mA 1 4 3 Tc = 100°C 2 25 −55 1 0 0 0 1 2 3 4 5 Collector-emitter voltage 6 0 0 7 0.4 VCE (V) 0.8 1.2 Base-emitter voltage hFE – IC 2.0 2.4 2.8 VBE (V) VCE – IB 20000 2.4 VCE (V) Common emitter 10000 VCE = 2 V 5000 3000 Collector-emitter voltage DC current gain hFE 1.6 Tc = 100°C 25 −55 1000 500 300 0.05 0.1 0.3 0.5 1 Collector current IC 3 5 2.0 5 IC = 6 A 1.6 4 3 2 1.2 1 0.8 0.3 0.4 Common emitter 10 Tc = 25°C 0 0.1 (A) 0.3 1 3 10 30 100 300 Base current IB (mA) VCE (sat) – IC VBE (sat) – IC 10 Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 10 IC/IB = 500 5 3 Tc = −55°C 1 25 0.5 100 0.3 0.1 0.3 0.5 1 Collector current IC 3 5 Common emitter 3 Tc = −55°C 25 1 (A) 100 0.5 0.3 0.1 10 IC/IB = 500 5 0.3 0.5 1 Collector current IC 4 3 5 10 (A) 2004-07-01 MP6901 (PNP transistor) IC – VCE −6 −1.5 Common −1.0 −0.7 −5 VCE = −2 V (A) −0.5 Tc = 25°C −0.4 −4 −0.3 −3 −2 −4 Collector current IC Collector current IC Common emitter emitter (A) −5 IC – VBE −6 IB = −0.2 mA −3 −1 −1 0 0 Tc = 100°C −2 0 −1 −2 −3 −4 −5 Collector-emitter voltage −6 0 0 −7 −0.4 VCE (V) −0.8 −1.2 hFE – IC −2.0 −2.4 −2.8 VBE (V) VCE – IB VCE (V) 5000 Collector-emitter voltage DC current gain hFE −1.6 −2.4 Common emitter 10000 VCE = −2 V Tc = 100°C 25 −55 1000 500 −0.1 −0.3 −0.5 −1 Collector current IC −3 −5 −10 −2.0 −1.6 IC = −6 A −5 −4 −3 −1.2 −1 −2 −0.8 −0.3 −0.4 Common emitter Tc = 25°C ) 300 −0.05 −55 Base-emitter voltage 20000 3000 25 0 −0.1 (A) −0.3 −1 −3 −10 −30 −100 −300 Base current IB (mA) VCE (sat) – IC Common emitter Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) VBE (sat) – IC −10 −10 IC/IB = 500 −5 −3 Tc = −55°C −1 25 −0.5 100 −0.3 −0.1 −0.3 −0.5 −1 Collector current IC −3 −5 −3 Tc = −55°C 25 −1 (A) 100 −0.5 −0.3 −0.1 −10 IC/IB = 500 −5 −0.3 −0.5 −1 Collector current IC 5 −3 −5 −10 (A) 2004-07-01 MP6901 Safe Operating Area (NPN Tr) 10 Safe Operating Area (PNP Tr) −10 IC max (pulsed)* IC max (pulsed)* −5 5 3 10 ms −3 100 μs 10 ms 100 μs (A) 1 ms 1 Collector current IC Collector current IC (A) 1 ms 0.5 0.3 0.1 −1 1 −0.5 −0.3 −0.1 −0.05 0.05 0.03 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.5 1 3 −0.03 *: Single nonrepetitive pulse Tc = 25°C VCEO max 10 30 VCEO max Curves must be derated linearly with increase in temperature. 100 −0.01 −0.5 300 −1 −3 −10 −30 −100 −300 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) rth – tw Transient thermal resistance rth (°C/W) 300 Curves should be applied in thermal 100 (3) limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (2) 30 (1) 10 3 -No heat sink/Attached on a circuit board- NPN (1) 1-device operation PNP 1 (2) 3-device operation (3) 6-device operation 0.3 0.001 0.01 0.1 1 Pulse width Circuit board 10 100 tw (s) 80 Circuit board 40 Attached on a circuit board (1) 1-device operation (2) 3-device operation (3) 6-device operation 0 0 2 4 (1) 1-device operation (2) 3-device operation (3) 8-device operation Attached on a circuit board (3) 120 6 Total power dissipation 8 PT PT (W) (2) PT – Ta 6 Total power dissipation Junction temperature increase ΔTj (°C) ΔTj – PT (1) 1000 4 (2) (3) Circuit board (1) 2 0 0 10 (W) 40 80 120 160 200 Ambient temperature Ta (°C) 6 2004-07-01 MP6901 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2004-07-01