Band Switching Diodes MA2Z081 Silicon epitaxial planar type Unit : mm INDICATES CATHODE Symbol Rating VR 35 V Forward current (DC) IF 100 mA Topr −25 to +85 °C Tstg −55 to +150 °C Operating ambient Storage temperature + 0.1 2.5 ± 0.2 Unit Reverse voltage (DC) temperature* 1.7 ± 0.1 + 0.1 0 to 0.05 Parameter 0.4 ± 0.15 2 0.9 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1 0.16 − 0.06 • S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package • Small diode capacitance CD • Low forward dynamic resistance rf • Optimum for a band switching of a tuner 0.3 − 0.05 ■ Features 0.4 ± 0.15 1.25 ± 0.1 For band switching 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 4D Note) * : Maximum ambient temperature during operation ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 33 V 0.01 100 nA Forward voltage (DC) VF IF = 100 mA 0.96 1.1 V Diode capacitance CD VR = 6 V, f = 1 MHz 0.9 1.2 pF IF = 2 mA, f = 100 MHz 1.0 1.3 Ω Forward dynamic resistance* rf Note) 1.Rated input/output frequency: 100 MHz 2.* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2Z081 Band Switching Diodes IF V F 102 102 Ta = 85°C 1 10−1 1 10−1 10−2 Ta = 85°C 25°C 0.2 0.4 −25°C 0.6 0.8 10−3 1.0 25°C 10 Forward voltage VF (V) 20 Forward dynamic resistance rf (Ω) Forward dynamic resistance rf (Ω) 6 4 2 10 30 100 300 2 1 1 000 3 1 100 300 1 000 Frequency f (MHz) 10 f = 100 MHz Ta = 25°C f = 1 MHz Ta = 25°C 5 Diode capacitance CD (pF) Forward dynamic resistance rf (Ω) 30 CD VR 3 2 1 3 2 1 0.5 0.3 0.2 0.3 1 3 10 30 Forward current IF (mA) 2 10 100 0.1 0 4 120 160 rf f 3 rf IF 0 0.1 80 0 Ambient temperature Ta (°C) 4 Frequency f (MHz) 4 40 10−2 50 IF = 3 mA Ta = 25°C rf Tester: TDC-121A 5 0 3 40 10 V rf f 6 IF = 2 mA Ta = 25°C 1 30 VR = 25 V 10−1 Reverse voltage VR (V) rf f 8 0 1 10−3 0 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) 1.2 Forward dynamic resistance rf (Ω) 0 10 Reverse current IR (nA) Reverse current IR (nA) Forward current IF (mA) 10 10 10−2 IR T a IR V R 102 IF = 3 mA Ta = 25°C rf Tester: TDC-121A 1.0 0.8 0.6 0.4 0.2 0 10 30 100 300 1 000 3 000 10 000 Frequency f (MHz)