Darlington Phototransistors PNZ263L Darlington Phototransistor 0.8 max. Gate the rest Unit : mm ø1.1 R0.5 3.5±0.3 1.1 2.4 1.1 0.8 Features 3.0±0.3 Not soldered 2.15 max. For optical control systems Darlington output, high sensitivity 28.0 +1.0 –0.5 14.3 0.8 1.35 Small size, thin side-view type package 2-0.8 max. (8.9) Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit VCEO 20 V Emitter to collector voltage VECO 5 V IC 30 mA Collector current 2-0.5±0.15 2 Collector to emitter voltage Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +80 ˚C Storage temperature Tstg –30 to +100 ˚C 0.3±0.15 2-0.8 max. 2.4 Adoption of visible light cutoff resin 1.95±0.25 1.4±0.2 0.9 0.5 1 2.54 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter *1 *2 Symbol Conditions min typ max Unit 0.1 0.5 µA 60 200 Dark current ICEO VCE = 10V Sensitivity to infrared emitters SIR*1 VCE = 10V, H = 3.75 µW/cm2 Peak sensitivity wavelength λP VCE = 10V 850 nm Acceptance half angle θ Measured from the optical axis to the half power point 25 deg. Response time tr, tf*2 VCC = 10V, IC = 1mA, RL = 100Ω 150 Collector saturation voltage VCE(sat) IC = 100µA, H = 3.75 µW/cm2 0.7 µA µs 1.5 V Measurements were made using infrared light (λ = 940 nm) as a light source. Switching time measuring circuit Sig.IN VCC (Input pulse) Sig.OUT RL ,, ,, 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 PNZ263L Darlington Phototransistors PC — Ta ICE(L) — VCE ICE(L) — L 10 2 32 VCE = 10V Ta = 25˚C T = 2856K 80 60 40 20 ICE(L) (mA) 100 PC = 100mW 24 16 L =100 lx 50 lx 8 30 lx Collector photo current ICE(L) (mA) Ta = 25˚C T = 2856K Collector photo current Collector power dissipation PC (mW) 120 10 1 10 –1 10 lx 0 – 20 0 20 40 60 Ambient temperature 80 0 100 Ta (˚C ) 0 4 16 10 –2 24 10 –1 10 2 10 Illuminance 10 3 L (lx) Spectral sensitivity characteristics 100 VCE = 10V 10 1 10 –1 VCE = 10V Ta = 25˚C 80 S (%) 1 1 VCE (V) 60 Relative sensitivity ICEO (µA) VCE = 10V T = 2856K 40 20 80 Ambient temperature 10 –2 – 20 120 Ta (˚C ) 0 10˚ 120 80 0 600 100 700 800 Sig. OUT 50Ω 50˚ Sig. OUT RL 60˚ 70˚ 90˚ Rise time 80˚ td 90% 10% tf RL = 1kΩ 10 3 500Ω 100Ω 10 2 10 10 –2 10 –1 1 VCC Sig. OUT 50Ω Sig. OUT RL tr 10 3 10 ICE(L) (mA) td 90% 10% tf RL = 1kΩ 500Ω 100Ω 10 2 VCC = 10V Ta = 25˚C Collector photo current 1000 1100 1200 tf — ICE(L) Sig.IN tr 900 Wavelength λ (nm) Ta (˚C ) VCC ,, , 40 Sig.IN tr (µs) 60 60 tr — ICE(L) 30˚ 40˚ Relative sensitivity S (%) 80 20˚ 40 Ambient temperature Directivity characteristics 0˚ 20 , 40 tf (µs) 0 Fall time 10 –2 – 40 2 20 ICEO — Ta 10 2 Dark current ICE(L) (mA) Collector photo current 12 Collector to emitter voltage ICE(L) — Ta 10 8 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 1 10 ICE(L) (mA)