TLP733,TLP734 TOSHIBA Photocoupler GaAs Ired&Photo−Transistor TLP733, TLP734 Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP734 is no−base internal connection for high−EMI environments. · Collector−emitter voltage: 55 V (min.) · Current transfer ratio: 50% (min.) Rank GB: 100% (min.) · UL recognized: UL1577, file no. E67349 · BSI approved: BS EN60065: 1994 Certificate no. 7364 BS EN60950: 1992 Certificate no. 7365 · TOSHIBA SEMKO approved: SS4330784 Weight: 0.42 g Certificate no. 9325163, 9522142 · · 11−7A8 Isolation voltage: 4000 Vrms (min.) Option (D4) type VDE approved: DIN VDE0884 / 06.92, Certificate no. 74286, 91808 Maximum operating insulation voltage: 630, 890 VPK Highest permissible over voltage: 6000, 8000 VPK (Note) · Pin Configurations (top view) TLP733 When a VDE0884 approved type is needed, please designate the “Option (D4)” Creepage distance 7.62 mm pich standard type : 7.0 mm (min.) 10.16 mm pich TLP×××F type 8.0 mm (min.) Clearance : 7.0 mm (min.) 8.0 mm (min.) Internal creepage path : 4.0 mm (min.) 4.0 mm (min.) Insulation thickness 0.5 mm (min.) : 0.5 mm (min.) 1 TLP734 1 6 1 6 2 5 2 5 3 4 3 4 1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base 1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc 2002-09-25 TLP733,TLP734 Current Transfer Ratio Type Classification *1 Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min. Max. 50 600 Blank, Y, Y■, G, G■, B, B■, GB 50 150 Y, Y■ 100 300 G, G■ 200 600 B, B■ 100 600 G, G■, B, B■, GB (None) TLP733 TLP734 Rank GR Rank GB Marking Of Classification *1: Ex. rank GB: TLP733 (GB) Note: Application type name for certification test, please use standard product type name, i.e. TLP733 (GB): TLP733 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 60 mA ∆IF / °C -0.7 mA / °C Peak forward current (100 µs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector-emitter voltage VCEO 55 V Collector-base voltage (TLP733) VCBO 80 V Emitter-collector voltage VECO 7 V Emitter-base voltage (TLP733) VEBO 7 V Collector current IC 50 mA Power dissipation PC 150 mW ∆PC / °C -1.5 mW / °C Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -40~100 °C Lead soldering temperature (10 s) Tsol 260 °C Total package power dissipation PT 250 mW ∆PT / °C -2.5 mW / °C BVS 4000 Vrms Forward current Detector LED Forward current derating (Ta ≥ 39°C) Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1 min., R.H.≤ 60%) 2 2002-09-25 TLP733,TLP734 Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Topr -25 ― 85 °C Operating temperature Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 µA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector-emitter breakdown voltage V(BR)CEO IC = 0.5 mA 55 ― ― V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 ― ― V Collector-base breakdown voltage (TLP733) V(BR)CBO IC = 0.1 mA 80 ― ― V Emitter-base breakdown voltage (TLP733) V(BR)EBO IE = 0.1 mA 7 ― ― V Collector dark current ICEO Collector dark current (ambient light below 1000 ℓx) ― 0.01 (2) 0.1 (10) µA VCE = 24 V Ta = 85°C (ambient light below 1000 ℓx) ― 2 (4) 50 (50) µA (TLP733) ICER VCE = 24 V, Ta = 85°C RBE = 1MΩ ― 0.5 10 µA (TLP733) ICBO VCB = 10 V ― 0.1 ― nA (TLP733) hFE VCE = 5 V, IC = 0.5 mA ― 400 ― ― CCE V = 0, f = 1 MHz ― 10 ― pF Collector dark current DC forward current gain Capacitance collector to emitter VCE = 24 V 3 2002-09-25 TLP733,TLP734 Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Base photo-current Collector-emitter saturation voltage Symbol Test Condition MIn. Typ. Max. 50 — 600 100 — 600 Unit IC / IF IF = 5 mA, VCE = 5 V Rank GB IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB — 60 — 30 — — IF = 5 mA, VCB = 5 V — 10 — IC = 2.4 mA, IF = 8 mA — — 0.4 IC = 0.2 mA, IF = 1 mA Rank GB — 0.2 — — — 0.4 Min. Typ. Max. Unit — 0.8 — pF — Ω IPB VCE (sat) % % % V Isolation Characteristics (Ta = 25°C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz 12 VS = 500 V, R.H.≤ 60% 1×10 AC, 1 minute Isolation voltage BVS 14 10 4000 — — AC, 1 second, in oil — 10000 — DC, 1 minute, in oil — 10000 — Vdc Min. Typ. Max. Unit — 2 — — 3 — — 3 10 — 3 10 — 3 — — 40 — — 90 — — 3 — — 30 — — 60 — Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time tON Turn-off time tOFF Turn-on time tON Storage time tS Turn-off time tOFF Turn-on time tON Storage time tS Turn-off time tOFF Test Condition VCC = 10 V, IC = 2 mA RL = 100Ω RL = 1.9 kΩ RBE = open VCC = 5 V, IF = 16 mA (Fig.1) RL = 1.9 kΩ RBE = 220 kΩ (TLP733) VCC = 5 V, IF = 16 mA (Fig.1) 4 µs µs µs 2002-09-25 TLP733,TLP734 Fig. 1 Switching time test circuit IF VCC IF ts RL RBE VCE 4.5V VCE 0.5V tON 5 tOFF 2002-09-25 TLP733,TLP734 IF – Ta PC – Ta 200 Allowable collector power dissipation (mW) PC 100 Allowable forward current IF (mA) 80 60 40 20 0 -20 0 40 20 60 80 100 160 120 80 40 0 -20 120 0 IFP – DR Pulse width ≤ 100 µs 30 (mA) Pulse forward current 300 100 50 30 10 3 Ta = 25°C 50 Forward current IF (mA) IFP 500 10 5 3 1 0.5 0.3 10-3 10-2 3 10-1 3 3 0.1 0.6 100 0.8 Duty cycle ratio DR 1.0 ∆VF / ∆Ta – IF 1.4 VF 1.6 1.8 (V) IFP – VFP 1000 (mA) 300 -2.0 IFP 500 -2.4 100 Pulse forward current Forward voltage temperature coefficient ∆VF / ∆Ta (mV / °C) 1.2 Forward voltage -2.8 -1.6 -1.2 -0.8 50 30 10 Pulse width ≤ 10 µs 5 Repetitive 3 frequency = 100 Hz -0.4 0.1 120 IF – VF 100 Ta = 25°C 1000 100 80 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3000 60 40 20 Ta = 25°C 0.3 1 3 Forward current 10 IF 1 0.4 30 50 (mA) 0.8 1.2 1.6 2.0 Pulse forward voltage VF 6 2.4 2.8 (V) 2002-09-25 TLP733,TLP734 IC – VCE IC – VCE 50 30 Ta = 25°C IC 20 mA 15 mA 30 PC (MAX.) 10 mA IF = 5 mA 10 40 mA 25 30 mA 20 50 mA (mA) 40 Collector current Collector current IC (mA) 50 mA Ta = 25°C 30 mA 20 20 mA 15 10 mA 10 5 mA 5 0 0 2 8 6 4 Collector-emitter voltage VCE IF = 2 mA 0 0 10 0.2 (V) 0.4 0.8 0.6 Collector-emitter voltage IC – IF 1 Ta = 25°C SAMPLE B VCE = 5 V VCE = 0.4 V 0.1 0.03 0.3 1 3 10 Forward current IF (%) IC / IF (µA) 10 RBE=∞ VCC IF 50kΩ A 100kΩ 500kΩ 0.3 RBE 0.3 1 3 Forward current 10 IF 0.3 1 3 30 10 IF Ta = 25°C 300 100 30 10 VCB = 0 V VCB = 5 V V CB 3 IF 1 0.1 0.1 A 0.3 1 3 Forward current (mA) 7 100 (mA) 0.3 100 30 IPB – IF TLP733 1000 3 SAMPLE B 30 Forward current Ta = 25°C 0.1 0.1 50 (mA) 50 VCE = 5 V 30 1 100 10 0.1 300 Base photo current IPB (mA) IC 100 30 VCE = 5 V VCE = 0.4 V SAMPLE A IC – IF at RBE TLP733 Collector current 300 Current transfer ratio (mA) IC Collector current 3 100 500 SAMPLE A 0.01 0.1 (V) Ta = 25°C 30 0.3 VCE IC / IF – IF 1000 10 1.2 1.0 10 IF 30 100 (mA) 2002-09-25 TLP733,TLP734 ICEO / Ta VCE (sat) – Ta 0.24 Ambient light IF = 5 mA 101 Below = 0 ℓx Collector-emitter saturation voltage VCE (sat) (V) IC = 1 mA VCE = 24 V 100 Collector dark current ICEO (µA) 10 V 5V 10-1 0.20 0.16 0.12 0.08 0.04 -40 10 -20 -2 0 20 40 60 80 100 Ambient temperature Ta (°C) 10-3 TLP733 Switching Time – RL 100 tOFF 20 40 60 80 100 120 SWITCHING TIME Ambient temperature Ta (°C) Ta = 25°C IF = 16 mA VCC = 5 V RBE = 220kΩ 10 5 3 tON 1 1 3 5 10 30 50 100 300 VCE = 5 V IF = 25 mA 50 30 10 mA 5 mA 10 Collector current IC (mA) 30 Load resistance RL (kΩ) IC – Ta 100 ts 50 (µs) 10-4 0 5 3 1 mA 1 0.5 0.5 mA 0.3 0.1 -40 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 8 2002-09-25 TLP733,TLP734 Switching Time RBE Switching Time – RL 50 Ta = 25°C 3000 I = 16 mA F VCC = 5 V 1000 tOFF 30 (µs) 10 Switching time Switching time (µs) ts Ta = 25°C IF = 16 mA VCC = 5 V RL = 1.9kΩ 5 3 tON tOFF 300 ts 100 30 10 tON 3 1 100k 300k 1M 3M Base emitter resistance RBE 1 1 ∞ 3 5 10 30 50 100 Load resistance RL (kΩ) (Ω) 9 2002-09-25 TLP733,TLP734 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 10 2002-09-25 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.