TOSHIBA TLP330

TLP330
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP330
Programmable Controllers
AC / DC−Input Module
Telecommunication
Unit in mm
The TOSHIBA TLP330 consists of a photo−transistor optically coupled
to two gallium arsenide infrared emitting diode connected inverse
parallel in a six lead plastic DIP package.This is suitable for application
of AC input current up to 150mA.
If maximum rating: ±150mA
·
·
Collector−Emitter voltage: 55V(min.)
·
Current transfer ratio: 25% (min.)(IF = ±20mA)
·
Isolation voltage: 5000Vrms (min.)
·
UL recognized: UL1577, file no. E67349
TOSHIBA
Weight: 0.39 g
Pin Configurations (top view)
1
6
2
5
3
4
11−7A8
1: Anode, cathode
2: Cathode, anode
3: NC
4: Emitter
5: Collector
6: Base
1
2002-09-25
TLP330
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
±150
mA
∆IF /°C
-1.5
mA /°C
Peak forward current (100µs pulse,100pps)
IFP
±1
A
Junction temperature
Tj
125
°C
Collector-emitter voltage
VCEO
55
V
Collector-base voltage
VCBO
80
V
Emitter-collector voltage
VECO
7
V
Emitter-base voltage
Detector
LED
Forward current
Forward current derating (Ta ≥ 25°C)
VEBO
7
V
Collector current
IC
80
mA
Power dissipation
PC
150
mW
∆PC /°C
-1.5
mW /°C
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-55~100
°C
Lead soldering temperature (10s)
Tsol
260
°C
Total package power dissipation
PT
250
mW
Total package power dissipation derating (Ta≥25°C)
∆PT /°C
-2.5
mW /°C
Isolation voltage (AC, 1 min, R.H. ≤ 60%) (Note 1)
BVS
5000
Vrms
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
―
5
24
V
Forward current
IF(RMS)
―
20
120
mA
Collector current
IC
―
1
10
mA
Topr
-25
―
85
°C
Operating temperature
2
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TLP330
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = ±100 mA
—
1.4
1.7
V
Forward current
IF
VF= ±0.7V
—
2.5
20
µA
Capacitance
CT
V = 0, f = 1 MHz
—
100
—
pF
Collector-emitter
breakdown voltage
V(BR) CEO
IC = 0.5 mA
55
—
—
V
Emitter-collector
breakdown voltage
V(BR) ECO
IE = 0.1 mA
7
—
—
V
Collector-base
breakdown voltage
V(BR) CBO
IC = 0.1 mA
80
—
—
V
Emitter-base
breakdown voltage
V(BR) EBO
IE = 0.1 mA
7
—
—
V
VCE = 24 V
—
10
100
nA
VCE = 24 V, Ta = 85°C
—
2
50
µA
Collector dark current
ICEO
Collector dark current
ICER
VCE = 24 V, Ta = 85°C
RBE = 1MΩ
—
0.5
10
µA
Collector dark current
ICBO
VCE = 10V
—
0.1
—
nA
DC forward current gain
hFE
VCE = 5 V, IC = 0.5mA
—
400
—
—
Capacitance
(collector to emitter)
CCE
V = 0, f = 1 MHz
—
10
—
pF
MIn.
Typ.
Max.
Unit
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Base photo-current
Collector-emitter
saturation voltage
Off-state collector current
CTR symmetry
Symbol
Condition
IC / IF
IF = ±20 mA VCE = 1 V
25
—
—
%
IC / IF(high)
IF = ±100 mA VCE = 1 V
20
—
80
%
IF = ±5 mA, VCB = 5 V
—
10
—
µA
IC = 2.4 mA, IF = 20 mA
—
—
0.4
IC = 2.4 mA, IF = ±100 mA
—
—
0.4
VF = ± 0.7V, VCE = 24 V
—
1
10
µA
IC (IF = -20mA)
/ IC (IF = +20mA)
0.5
1
2
—
IPB
VCE (sat)
IC(off)
IC (ratio)
3
V
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TLP330
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
—
0.8
—
pF
5×1010
1014
—
Ω
5000
—
—
Vrms
AC, 1 second, in oil
—
10000
—
Vrms
DC, 1 minute, in oil
—
10000
—
Vdc
Min.
Typ.
Max.
Unit
—
2
—
—
3
—
—
3
—
—
3
—
—
2
—
—
15
—
—
25
—
—
2
—
—
12
—
—
20
—
Capacitance
(input to output)
CS
VS = 0, f = 1 MHz
Isolation resistance
RS
VS = 500 V, R.H. ≤ 60%
AC, 1 minute
Isolation voltage
BVS
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Rise time
tr
Fall time
tf
Turn-on time
ton
Turn-off time
toff
Turn-on time
tON
Storage time
ts
Turn-off time
tOFF
Turn-on time
tON
Storage time
ts
Turn-off time
tOFF
Test Condition
VCC = 10 V
IC = 2 mA
RL = 100Ω
RL = 1.9 kΩ (Fig.1)
RBE = OPEN
VCC = 5 V, IF = ±16 mA
RL = 1.9 kΩ (Fig.1)
RBE = 220kΩ
VCC = 5 V, IF = ±16 mA
µs
µs
µs
Fig. 1 Switching time test circuit
IF
RL
RBE
VCC
IF
VCE
VCE
tS
tON
4
4.5V
VCC
0.5V
tOFF
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TLP330
PC – Ta
200
160
160
Allowable collector power
Dissipation PC (mW)
Allowable forward current
IF (mA)
IF – Ta
200
120
80
40
0
-20
0
40
20
60
80
100
120
80
40
0
-20
120
0
20
Ambient temperature Ta (°C)
40
Ta = 25°C
50
Ta = 25°C
(mA)
(mA)
1000
500
Forward current IF
IFP
Pulse forward current
120
30
300
100
50
30
10
10
5
3
1
0.5
0.3
3
10-3
10-2
3
10-1
3
0.1
0.6
100
3
0.8
Duty cycle ratio DR
1.0
1.2
Forward voltage
∆VF/∆Ta – IF
1.4
1.6
VF
1.8
(V)
IFP – VFP
-3.2
1000
(mA)
-2.4
IFP
500
-2.8
Pulse forward current
Forward voltage temperature
Coefficient ∆VF/∆Ta (mV / °C)
100
IF – VF
100
Pulse width ≦ 100μs
3000
80
Ambient temperature Ta (°C)
IFP – DR
5000
60
-2.0
-1.6
-1.2
-0.8
300
100
50
30
10
Pulse width ≦ 10μs
5
repetitive frequency
3
= 100Hz
Ta = 25°C
-0.4
0.1
0.3 0.5
1
3
Forward current
5
IF
10
30
0
0.6
50
(mA)
1.0
1.4
1.8
2.2
2.6
Pulse forward voltage VFP (V)
5
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TLP330
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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