2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) • High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulse (Note 1) Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol Rating Unit VCBO 50 V VCES 40 VCEO 20 VEBO 8 IC 5 ICP 8 IB 0.5 PC 1.0 10 V V A JEDEC ― JEITA ― TOSHIBA A 2-7B1A Weight: 0.36 g (typ.) W Tj 150 °C Tstg −55 to 150 °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC3072 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 100 nA V (BR) CEO IC = 10 mA, IB = 0 V Collector-emitter breakdown voltage DC current gain 20 ― ― hFE (1) VCE = 2 V, IC = 0.5 A (Note 2) 140 ― 450 hFE (2) VCE = 2 V, IC = 4 A 70 ― ― VCE (sat) IC = 4 A, IB = 0.1 A ― ― 1.0 V Base-emitter voltage VBE VCE = 2 V, IC = 4 A ― ― 1.5 V Transition frequency fT VCE = 2 V, IC = 0.5 A ― 100 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 40 ― pF Collector emitter saturation voltage Collector output capacitance Note 2: hFE (1) classification Cob A: 140 to 240, B: 200 to 330, C: 300 to 450 Marking C3072 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC3072 IC – VBE IC – VCE 8 10 Common emitter VCE = 2 V IC (A) 200 8 150 100 6 Collector current Collector current IC (A) Common emitter Tc = 25°C 70 50 30 4 20 IB = 10 mA 2 6 4 Tc = 100°C 25 −25 2 0 0 0 1 2 3 4 Collector-emitter voltage 5 VCE 0 0 6 0.4 (V) 0.8 Base-emitter voltage hFE – IC Collector-emitter saturation voltage VCE (sat) (V) hFE DC current gain 300 Tc = 100°C 25 −25 100 50 30 Common emitter 10 0.01 VCE = 2 V 0.03 0.3 0.1 1 Collector current 1.6 VBE 2.0 (V) VCE (sat) – IC 1000 500 1.2 3 10 3 Common emitter IC/IB = 40 1 0.5 0.3 Tc = 100°C 25 −25 0.1 0.05 0.03 0.01 0.03 0.3 0.1 IC (mA) 1 3 10 Collector current IC (A) Safe Operating Area PC – Ta (1) 8 6 4 2 0 0 (2) (A) 10 10 (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 5 Collector current IC Collector power dissipation PC (W) 12 3 IC max (pulsed)** 1 ms* IC max (continuous) 10 ms* 100 ms* DC operation Tc = 25°C 1 0.5 *: Single nonrepetitive pulse Tc = 25°C 0.3 **: Pulse width = 10 ms (max) Duty cycle = 30％ (max) (3) Curves must be derated linearly with VCEO max increase in temperature. 25 50 75 100 Ambient temperature 125 Ta 150 0.1 0.3 175 (°C) 1 3 Collector-emitter voltage 3 10 VCE 30 (V) 2005-02-01 2SC3072 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2005-02-01