2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1201 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA PC 500 Collector power dissipation PC 1000 (Note 1) Junction temperature Storage temperature range PW-MINI JEDEC mW Tj 150 °C Tstg −55 to 150 °C ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 2 Note 1: Mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SC2881 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 120 V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 ― ― V Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 5 ― ― V VCE = 5 V, IC = 100 mA 80 ― 240 ― VCE (sat) IC = 500 mA, IB = 50 mA ― ― 1.0 V VBE VCE = 5 V, IC = 500 mA ― ― 1.0 V fT VCE = 5 V, IC = 100 mA ― 120 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― ― 30 pF hFE DC current gain (Note 2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Cob Note 2: hFE classification O: 80 to 160, Y: 120 to 240 Marking Part No. (or abbreviation code) C Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC2881 IC – VCE hFE – IC 800 1000 20 Common emitter Common emitter 10 hFE 600 5 3 400 2 200 0 4 300 Ta = 100°C 25 −25 100 50 30 IB = 1 mA 0 0 VCE = 5 V 500 Ta = 25°C DC current gain Collector current IC (mA) 50 8 12 Collector-emitter voltage VCE 10 3 16 10 (V) 30 100 Collector current VCE (sat) – IC 300 IC (mA) IC – VBE 1.0 1 Common emitter Common emitter IC/IB = 10 VCE = 5 V 0.8 IC (A) 0.5 0.3 0.6 0.1 Collector current Collector-emitter saturation voltage VCE (sat) (V) 1000 Ta = 100°C 25 0.05 Ta = 100°C 0.4 −25 25 0.2 −25 0.03 3 10 30 100 Collector current 300 0 0 1000 0.2 IC (mA) 0.4 0.6 0.8 Base-emitter voltage VBE 1.0 1.2 (V) Safe Operating Area 3000 IC max (pulse)* 1 ms* 1000 IC max (continuous) 1.2 300 PC (W) 100 ms* 100 DC operation Ta = 25°C Collector power dissipation (mA) 500 Collector current IC PC – Ta 10 ms* 50 30 10 5 3 1 0.3 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. 1 3 10 Collector-emitter voltage 1.0 (1) Mounted on a ceramic (1) substrate (250 mm2 × 0.8 t) (2) No heat sink 0.8 0.6 (2) 0.4 0.2 VCEO max 30 VCE 100 0 0 300 (V) 20 40 60 80 100 Ambient temperature 3 Ta 120 140 160 (°C) 2004-07-07 2SC2881 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07