2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1314 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current DC Pulse (Note 1) DC Pulse (Note 1) Collector power dissipation Symbol Rating Unit VCBO 30 V VCES 30 VCEO 10 VEBO 6 IC 2 ICP 4 IB 0.4 IBP 0.8 PC 500 PC (Note 2) Junction temperature Storage temperature range V JEDEC ― V JEITA SC-62 A TOSHIBA 2-5K1A Weight: 0.05 g (typ.) A mW 1000 Tj 150 °C Tstg −55 to 150 °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) 2 Note 2: 2SC2982 mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SC2982 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 0.1 µA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 ― ― V Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 6 ― ― V VCE = 1 V, IC = 0.5 A 140 ― 600 hFE (2) VCE = 1 V, IC = 2 A 70 140 ― VCE (sat) IC = 2 A, IB = 50 mA ― 0.2 0.5 Base-emitter voltage VBE VCE = 1 V, IC = 2 A ― 0.86 1.5 V Transition frequency fT VCE = 1 V, IC = 0.5 A ― 150 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 27 ― pF hFE (1) DC current gain (Note 3) Collector-emitter saturation voltage Collector output capacitance Note 3: hFE (1) classification Cob ― V A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600 Marking Part No. (or abbreviation code) S Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC2982 IC – VCE hFE – IC 4.0 1000 25 Common emitter Ta = 100°C 500 Ta = 25°C 15 hFE 3.0 10 DC current gain Collector current IC (A) 60 2.0 IB = 5 mA 1.0 25 300 −25 100 50 30 Common emitter VCE = 1 V 0 0 0 1.0 2.0 3.0 Collector-emitter voltage VCE 10 0.01 4.0 0.03 0.1 0.3 1 Collector current IC (V) VCE (sat) – IC 10 (A) IC – VBE 1 4.0 Common emitter Common emitter IC/IB = 40 VCE = 1 V IC (A) 0.5 0.3 3.2 2.4 Collector current Collector-emitter saturation voltage VCE (sat) (V) 3 0.1 0.05 Ta = 100°C 0.03 −25 0.01 0.01 0.03 0.1 25 25 Ta = 100°C −25 1.6 0.8 0.3 1 3 0 0 10 0.4 Collector current IC (A) 0.8 1.2 1.6 Base-emitter voltage VBE 2.0 (V) Safe Operating Area 10 PC – Ta IC max (pulse)* 1 0.5 IC max (continuous) 100 ms* 10 ms* DC operation Ta = 25°C Collector power dissipation Collector current IC (A) 3 1.4 PC (W) 5 0.3 0.1 0.01 0.1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. 0.3 1 3 Collector-emitter voltage (1) Mounted on a ceramic substrate 2 (250 mm × 0.8 t) 1.2 1.0 (2) No heat sink (1) 0.8 0.6 (2) 0.4 0.2 VCEO max 10 VCE 30 0 0 100 (V) 20 40 60 80 100 Ambient temperature 3 Ta 120 140 160 (°C) 2004-07-07 2SC2982 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07