2SC3670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3670 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed Symbol Rating Unit VCBO 30 V VCES 30 VCEO 10 VEBO 6 IC 2 V V A ICP 5 Base current IB 0.5 A Collector power dissipation PC 1000 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C (Note 1) Storage temperature range JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 100 nA Collector-emitter breakdown voltage VCEO IC = 10 mA, IB = 0 10 ― ― V VEBO IC = 1 mA, IC = 0 6 ― ― V VCE = 1 V, IC = 0.5 A 140 ― 600 Emitter-base breakdown voltage hFE (1) DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note 2: hFE (1) classification (Note 2) hFE (2) VCE = 1 V, IC = 2 A 70 200 ― VCE (sat) IC = 2 A, IB = 50 mA ― 0.2 0.5 V VBE VCE = 1 V, IC = 2 A ― 0.86 1.5 V VCE = 1 V, IC = 0.5 A ― 150 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 27 ― pF fT Cob A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600 1 2004-07-07 2SC3670 Marking C3670 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC3670 IC – VCE IC – VBE 5 50 5 40 Common emitter Common emitter 4 VCE = 1 V IC (A) 30 20 3 2 Collector current Collector current IC (A) Ta = 25°C 10 IB = 5 mA 1 0 0 4 3 Ta = 100°C 4 3 2 5 6 1 VCE 7 0 0.2 (V) 0.4 hFE – IC Collector-emitter saturation voltage VCE (sat) (V) hFE 25 −25 100 50 Common emitter VCE = 1 V 0.3 0.1 1.0 0.8 VBE 1.4 1.2 (V) VCE (sat) – IC Ta = 100°C 300 0.6 Base-emitter voltage 500 DC current gain −25 0 1 Collector-emitter voltage 20 0.5 25 2 3 1 0.5 Common emitter IC/IB = 40 0.3 Ta = 100°C 25 −25 0.1 0.05 0.02 0.5 5 Collector current IC (A) 0.1 0.3 1 3 5 Collector current IC (A) Safe Operating Area 10 5 IC (A) 1.0 0.8 0.6 0.4 0.2 0 0 IC max (pulsed)* 3 IC max (continuous) 1.2 Collector current Collector power dissipation PC (W) PC – Ta 20 40 60 80 100 Ambient temperature Ta 120 140 160 (°C) 1 DC operation Ta = 25°C 10 ms* 100 ms* 0.5 0.3 0.1 0.05 0.03 *: Single nonrepetitive pulse Ta = 25°C 0.01 Curves must be derated linearly with increase in 0.005 temperature. 0.003 0.03 0.1 0.3 1 VCEO max 3 Collector-emitter voltage 3 10 VCE 30 100 (V) 2004-07-07 2SC3670 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07