2SJ74 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications Unit: mm · Recommended for first stages of EQ amplifiers and M.C. head amplifiers. · High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA) · Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz) · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Complimentary to 2SK170 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VGDS 25 V Gate current IG -10 mA Drain power dissipation PD 400 mW Junction temperature Tj 125 °C JEDEC TO-92 Tstg -55~125 °C JEITA SC-43 TOSHIBA 2-5F1D Gate-drain voltage Storage temperature range Weight: 0.21 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Gate cut-off current Gate-drain breakdown voltage Drain current Symbol Test Condition Min Typ. Max Unit IGSS VGS = 25 V, VDS = 0 ¾ ¾ 1.0 nA V (BR) GDS VDS = 0, IG = 100 mA 25 ¾ ¾ V VDS = -10 V, VGS = 0 -2.6 ¾ -20 mA VDS = -10 V, ID = -0.1 mA 0.15 ¾ 2.0 V IDSS (Note) Gate-source cut-off voltage VGS (OFF) Forward transfer admittance ïYfsï VDS = -10 V, VGS = 0, f = 1 kHz 8 22 ¾ mS Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 105 ¾ pF Reverse transfer capacitance Crss VDG = -10 V, ID = 0, f = 1 MHz ¾ 32 ¾ pF NF (1) VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 10 Hz ¾ 1.0 10 NG (2) VDS = -10 V, ID = -1 mA, RG = 1 kW, f = 1 kHz ¾ 0.5 2 Noise figure Note: IDSS classification dB GR: -2.6~-6.5 mA, BL: -6.0~-12 mA, V: -10~-20 mA 1 2003-03-25 2SJ74 2 2003-03-25 2SJ74 3 2003-03-25 2SJ74 4 2003-03-25 2SJ74 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2003-03-25