MICROWAVE POWER GaAs FET TIM5359-45SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.5dBm Single Carrier Level HIGH POWER P1dB=46.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion SYMBOL P1dB Channel Temperature Rise ΔTch G1dB IDS ΔG ηadd IM3 ( Ta= 25°C ) CONDITION VDS= 10V f = 5.3 to 5.9GHz Two-Tone Test Po=35.5dBm UNIT dBm MIN. 46.0 TYP. MAX. 46.5 ⎯ dB 8.0 9.0 ⎯ A dB % dBc ⎯ ⎯ ⎯ -42 9.6 ⎯ 41 -45 10.8 ±0.8 °C ⎯ ⎯ 100 UNIT mS MIN. MAX. ⎯ TYP. 8000 V -1.0 -2.5 -4.0 A ⎯ 24 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 0.8 1.2 ⎯ ⎯ (Single Carrier Level) (VDS X IDS + Pin P1dB) X Rth(c-c) Recommended Gate Resistance(Rg) : 28 Ω (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITION VDS= 3V IDS= 11.0A VDS= 3V IDS= 170mA VDS= 3V VGS= 0V IGS= -500μA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm ( Ta= 25°C ) VGSoff ⎯ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM5359-45SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 20 Total Power Dissipation (Tc= 25 °C) PT W 125 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM5359-45SL RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS≅9.6A Pout(dBm) Pin=37.5dBm 47 46 45 44 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Frequency (GHz) Output Power(Pout) vs. Input Power(Pin) 49 freq.=5.9GHz 48 VDS=10V IDS≅9.6A 80 Pout(dBm) Pout 46 70 45 60 44 50 ηadd 43 40 42 30 41 20 40 10 31 33 35 37 Pin(dBm) 3 39 41 ηadd(%) 47 TIM5359-45SL Power Dissipation(PT) vs. Case Temperature(Tc) 130 PT(W) 110 90 70 50 30 40 0 80 120 160 200 Tc( °C ) IM3 vs. Output Power Characteristics -10 VDS=10V IDS≅9.6A -20 freq.=5.9GHz Δf=5MHz IM3(dBc) -30 -40 -50 -60 30 32 34 36 Pout(dBm) @Single carrier level 4 38 40