TOSHIBA TPC6011

TPC6011
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOSIV)
TPC6011
Notebook PC Applications
Portable Equipment Applications
Unit: mm
•
Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.)
•
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
•
Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
( VGS = 10V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
6
Pulse
(Note 1)
IDP
24
Drain power dissipation
(t = 5 s)
(Note 2a)
PD
2.2
W
Drain power dissipation
(t = 5 s)
(Note 2b)
PD
0.7
W
TOSHIBA
Single pulse avalanche energy (Note 3)
EAS
2.3
mJ
Weight: 0.011 g (typ.)
Avalanche current
IAR
3
A
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
A
JEDEC
―
JEITA
―
2-3T1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
Symbol
Max
Unit
Rth (ch-a)
56.8
°C/W
Rth (ch-a)
178.5
°C/W
Note: (Note 1), (Note 2), (Note 3): See other pages.
6
5
4
1
2
3
This transistor is an electrostatic-sensitive device. Please handle with caution.
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TPC6011
Marking (Note 4)
Lot code (month)
Part No.
(or abbreviation code)
Pin #1
Lot No.
S2L
Product-specific code
Lot code Note 5
(year)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 200 μH, RG = 25 Ω, IAR = 3 A
Note 4: • on lower left of the marking indicates Pin 1.
Note 5: A dot marking identifies the indication of product Labels.
Without a dot: [[Pb]]/INCLUDES > MCV
With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ± 20 V, VDS = 0 V
⎯
⎯
±100
nA
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
10
⎯
⎯
Vth
VDS = 10 V, ID = 1mA
1.3
⎯
2.5
RDS (ON)
VGS = 4.5 V, ID = 3 A
⎯
24
32
RDS (ON)
VGS =10 V, ID = 3 A
⎯
16
20
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
5
10
⎯
Input capacitance
Ciss
⎯
640
⎯
Reverse transfer capacitance
Crss
⎯
125
⎯
Output capacitance
Coss
⎯
185
⎯
⎯
5.8
⎯
⎯
12
⎯
⎯
8
⎯
⎯
24.5
⎯
⎯
14
⎯
⎯
2.7
⎯
⎯
4.2
⎯
Gate threshold voltage
Drain-source ON-resistance
Rise time
tr
Turn-on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
VGS
ID = 3 A
VOUT
10
0V
ton
Fall time
4.7 Ω
Switching time
tf
Turn-off time
toff
Total gate charge
(gate-source plus gate-drain)
RL = 5 Ω
Drain-source breakdown voltage
VDD ≈ 15 V
Duty ≤ 1%, tw = 10 μs
Qg
Gate-source charge 1
Qgs 1
Gate-drain (“miller”) charge
VDD ≈ 24 V, VGS = 10 V, ID = 6 A
Qgd
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
24
A
⎯
⎯
− 1.2
V
VDSF
IDR = 6 A, VGS = 0 V
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ID – VDS
5
10
4
ID – VDS
3.5 Common source
Ta = 25°C
Pulse test
3.7
4.5
8
4
3.7
4.5
10
Common source
Ta = 25°C
Pulse test
(A)
Drain current ID
Drain current ID
(A)
4
10
3
3.2
2
3
1
3.5
6
4
3.2
2
3
VGS = 2.8 V
0
0
0.2
0.4
0.6
Drain-source voltage
0.8
VGS = 2.8 V
0
0
1
VDS (V)
1
2
(V)
6
4
25
2
Ta = −55°C
100
1
2
3
4
Gate-source voltage
Common source
Ta = 25°C
Pulse test
0.4
0.3
0.2
ID = 6 A
0.1
3
1.5
0
0
6
5
VGS (V)
2
4
|Yfs| – ID
8
10
VGS (V)
RDS (ON) – ID
100
Drain-source ON-resistance
RDS (ON) (mΩ)
|Yfs| (S)
Forward transfer admittance
6
Gate-source voltage
100
Ta = −55°C
25
100
1
0.1
0.1
(V)
VDS
8
10
5
VDS – VGS
Common source
VDS = 10 V
Pulse test
0
0
VDS
0.5
Drain-source voltage
Drain current ID
(A)
10
4
Drain-source voltage
ID – VGS
12
3
Common source
VDS = 10 V
Pulse test
1
10
4.5
Common source
Ta = 25°C
Pulse test
1
0.1
100
Dain current ID (A)
VGS = 10 V
10
1
10
100
Drain current ID (A)
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RDS (ON) – Ta
IDR – VDS
50
100
Common source
Ta = 25°C
Pulse test
Common source
Drain reverse current IDR (A)
40
ID = 1.5, 3, 6 A
30
VGS = 4.5 V
ID = 1.5, 3, 6 A
VGS = 10 V
10
0
−80
−40
0
40
80
120
4.5
1
0
160
2
−0.4
Ambient temperature Ta (°C)
−0.8
4
Gate threshold voltage
Capacitance C
(pF)
Vth (V)
Ciss
Coss
100
Crss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
10
Drain-source voltage
3
2
1
−40
0
40
80
25
20
Drain-source voltage
1.5
(V)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
VDS
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(1) DC
1
(2) t = 5 s
0.5
(2) DC
40
80
160
Dynamic input/output characteristics
30
2
120
Ambient temperature Ta (°C)
VDS
PD – Ta
(1) t = 5 s
(V)
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
−80
100
2.5
Drain power dissipation PD
VDS
−1.6
Vth – Ta
Capacitance – VDS
0
0
−1.2
Drain-source voltage
1000
10
0.1
VGS = 0 V
1
10
120
Ambient temperature Ta (°C)
VDD = 24 V
20
VGS
15
15
12
6
12
10
VDD = 24 V
10
6
5
0
0
160
30
Common source
ID = 6 A
Ta = 25°C
25
Pulse test
5
4
8
12
16
20
VGS (V)
20
10
Gate-source voltage
Drain-source ON-resistance
RDS (ON) (mΩ)
Pulse test
0
Total gate charge Qg (nC)
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rth − tw
1000
Device mounted on a glassepoxy board (b) (Note 2b)
Transient thermal impedance
rth (℃/W)
100
Device mounted on a glassepoxy board (a) (Note 2a)
10
1
Single pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse tw (s)
Safe operating area
100
ID max (pulse)*
1 ms*
Drain current ID
(A)
10
10 ms*
1
0.1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature
0.01
0.01
0.1
VDSS max
1
Drain-source voltage
10
VDS
100
(V)
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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