MICROWAVE POWER GaAs FET TIM5359-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.0dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.3GHz to 5.9GHz n HIGH GAIN G1dB=8.5dB at 5.3GHz to 5.9GHz n BROADBAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB CONDITIONS UNIT dBm MIN. 45.0 G1dB VDS= 10V f = 5.3 to 5.9GHz dB 7.5 8.5 A dB % dBc -42 8.0 38 -45 9.0 ±0.8 A °C 8.0 9.0 100 UNIT mS MIN. MAX. TYP. 6500 V -1.0 -2.5 -4.0 A 20 26 V -5 °C/W 1.0 1.3 IDS1 ∆G ηadd IM3 Two Tone Test Po=35.0dBm IDS2 ∆Tch (Single Carrier Level) (VDS X IDS + Pin – P1dB) X Rth(c-c) TYP. MAX. 45.5 Recommended Gate Resistance(Rg) : 28 Ω (Max.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420µA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm VGSoff u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul., 2006 TIM5359-35SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 20 Total Power Dissipation (Tc= 25 °C) PT W 115.4 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.7±0.15 2.5 MIN. Unit in mm 4 – C1.0 (1) (1) Gate (2) Source (2) 2.5 MIN. 2.6±0.3 (2) 17.4± 0.4 8.0±0.2 (3) Drain (3) 20.4±0.3 5.5 MAX. 2.4± 0.3 0.2 MAX. 16.4 MAX. 1.4± 0.3 +0.1 0.1 -0.05 24.5 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM5359-35SL RF PERFORMANCES Output Power (Pout) vs. Frequency VDS=10V Pout(dBm) IDS≅8.5A Pin=37.0dBm 46 45 44 43 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Frequency (GHz) Output Power(Pout) vs. Input Power(Pin) freq.=5.9GHz VDS=10V IDS=8.5A 80 70 Pout 45 60 44 50 43 ηadd 42 40 30 41 20 40 10 39 32 34 36 Pin(dBm) 3 38 ηadd(%) Pout(dBm) 46 TIM5359-35SL Power Dissipation(PT) vs. Case Temperature(Tc) 120 PT(W) 100 80 60 40 20 0 40 80 120 160 200 38 40 Tc( °C ) IM3 vs. Power Characteristics -10 VDS=10V IDS≅8.5A -20 freq.=5.9GHz ∆f=5MHz IM3(dBc) -30 -40 -50 -60 30 32 34 36 Pout(dBm) @Single carrier level 4