TOSHIBA TIM5359-35SL

MICROWAVE POWER GaAs FET
TIM5359-35SL
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 35.0dBm
Single Carrier Level
n HIGH POWER
P1dB=45.5dBm at 5.3GHz to 5.9GHz
n HIGH GAIN
G1dB=8.5dB at 5.3GHz to 5.9GHz
n BROADBAND INTERNALLY MATCHED
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P1dB
CONDITIONS
UNIT
dBm
MIN.
45.0
G1dB
VDS= 10V
f = 5.3 to 5.9GHz
dB
7.5
8.5

A
dB
%
dBc



-42
8.0

38
-45
9.0
±0.8


A
°C


8.0
9.0
100
UNIT
mS
MIN.
MAX.

TYP.
6500
V
-1.0
-2.5
-4.0
A

20
26
V
-5


°C/W

1.0
1.3
IDS1
∆G
ηadd
IM3
Two Tone Test
Po=35.0dBm
IDS2
∆Tch
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
TYP. MAX.
45.5


Recommended Gate Resistance(Rg) : 28 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Saturated Drain Current
IDSS
Gate-Source Breakdown
Voltage
Thermal Resistance
VGSO
CONDITIONS
VDS= 3V
IDS= 10.5A
VDS= 3V
IDS= 140mA
VDS= 3V
VGS= 0V
IGS= -420µA
Rth(c-c)
Channel to Case
Pinch-off Voltage
SYMBOL
gm
VGSoff

u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul., 2006
TIM5359-35SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
IDS
A
20
Total Power Dissipation (Tc= 25 °C)
PT
W
115.4
Channel Temperature
Tch
°C
175
Storage Temperature
Tstg
°C
-65 to +175
PACKAGE OUTLINE (2-16G1B)
0.7±0.15
2.5 MIN.
Unit in mm
4 – C1.0
(1)
(1) Gate
(2) Source
(2)
2.5 MIN.
2.6±0.3
(2)
17.4± 0.4
8.0±0.2
(3) Drain
(3)
20.4±0.3
5.5 MAX.
2.4± 0.3
0.2 MAX.
16.4 MAX.
1.4± 0.3
+0.1
0.1 -0.05
24.5 MAX.
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM5359-35SL
RF PERFORMANCES
Output Power (Pout) vs. Frequency
VDS=10V
Pout(dBm)
IDS≅8.5A
Pin=37.0dBm
46
45
44
43
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency (GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=5.9GHz
VDS=10V
IDS=8.5A
80
70
Pout
45
60
44
50
43
ηadd
42
40
30
41
20
40
10
39
32
34
36
Pin(dBm)
3
38
ηadd(%)
Pout(dBm)
46
TIM5359-35SL
Power Dissipation(PT) vs. Case Temperature(Tc)
120
PT(W)
100
80
60
40
20
0
40
80
120
160
200
38
40
Tc( °C )
IM3 vs. Power Characteristics
-10
VDS=10V
IDS≅8.5A
-20
freq.=5.9GHz
∆f=5MHz
IM3(dBc)
-30
-40
-50
-60
30
32
34
36
Pout(dBm) @Single carrier level
4