SSM3K35MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV ○ High-Speed Switching Applications ○ Analog Switch Applications Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V DC ID 180 Pulse IDP 360 Drain current Drain power dissipation PD (Note 1) mW Channel temperature Tch 150 °C Storage temperature Tstg −55~150 °C 0.32±0.05 3 0.13±0.05 2 1.Gate 2.Source 3.Drain VESM mA 150 1 0.5±0.05 Absolute Maximum Ratings (Ta = 25˚C) 0.8±0.05 0.4 Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) 0.8±0.05 • 1.2±0.05 0.4 1.2 V drive 1.2±0.05 • 0.22±0.05 Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA Note 1: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.585 mm ) 2-1L1B Weight: 1.5 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain–source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Symbol Min Typ. Max Unit IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) DSS ID = 0.1 mA, VGS = 0 V 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V ⏐Yfs⏐ VDS = 3 V, ID = 50 mA (Note 2) 115 ⎯ ⎯ mS ID = 50 mA, VGS = 4 V (Note 2) ⎯ 1.5 3 ID = 50 mA, VGS = 2.5 V (Note 2) ⎯ 2 4 ID = 5 mA, VGS = 1.5 V (Note 2) ⎯ 3 8 ID = 5 mA, VGS = 1.2 V (Note 2) ⎯ 5 20 ⎯ 9.5 ⎯ ⎯ 4.1 ⎯ RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Switching time Test Condition VDS = 3 V, VGS = 0 V, f = 1 MHz Coss ⎯ 9.5 ⎯ Turn-on time ton ⎯ 115 ⎯ Turn-off time toff ⎯ 300 ⎯ ⎯ -0.9 -1.2 Drain–source forward voltage VDSF VDD = 3 V, ID = 50 mA, VGS = 0 to 2.5 V ID = - 180 mA, VGS = 0 V (Note 2) Ω pF ns V Note 2: Pulse test 1 2008-05-27 SSM3K35MFV Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 50 Ω 0 10 μs RL 0V (c) VOUT VDD VDD = 3 V D.U. < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C Marking 10% VDD 10% 90% VDS (ON) tr ton tf toff Equivalent Circuit (top view) 3 3 KZ 1 2 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2008-05-27 SSM3K35MFV ID – VDS ID – VGS 1000 400 Common Source Ta = 25°C 2.5 Common Source VDS = 3 V 300 ID 1.8 200 1.5 100 25°C 0 0.5 1 1.5 Drain–source voltage VDS −25°C 1 0.1 VGS = 1.2 V 0 Ta = 100°C 10 Drain current Drain current 100 (mA) 4 ID (mA) 10 0.01 0 2 1 (V) Gate–source voltage RDS (ON) – VGS 3 VGS (V) RDS (ON) – VGS 10 10 Common Source Common Source ID = 5 mA ID = 50 mA Drain–source ON-resistance RDS (ON) (Ω) Drain–source ON-resistance RDS (ON) (Ω) 2 5 25°C Ta = 100°C 5 25°C Ta = 100°C −25°C 0 0 2 4 6 8 Gate–source voltage VGS −25°C 0 0 10 2 (V) 4 Gate–source voltage RDS (ON) – ID 10 Common Source (V) Common Source Drain–source ON-resistance RDS (ON) (Ω) Drain–source ON-resistance RDS (ON) (Ω) VGS 10 RDS (ON) – Ta VGS = 1.2 V 1.5 V 2.5 V 5 VGS = 1.2 V, ID = 5 mA 1.5 V, 5 mA 2.5 V, 50 mA 4V 0 1 8 10 Ta = 25°C 5 6 4 V, 50 mA 10 Drain current 100 ID 0 −50 1000 0 50 Ambient temperature (mA) 3 100 Ta 150 (°C) 2008-05-27 SSM3K35MFV ⎪Yfs⎪ – ID Vth – Ta 1.0 (mS) ⎪Yfs⎪ Forward transfer admittance Gate threshold voltage Vth (V) Common Source ID = 1 mA VDS = 3 V 0.5 0 −50 0 50 100 Ambient temperature Ta 150 500 300 100 50 30 10 5 Common Source VDS = 3 V Ta = 25°C 3 1 1 10 Drain current (°C) IDR – VDS (mA) C – VDS VGS = 0 V G (pF) 25°C S Ta = 100°C 1 C 10 50 D IDR 100 Capacitance Drain reverse current ID 1000 100 Common Source IDR (mA) 100 100 −25°C 0.1 10 Ciss 5 Coss Common Source VGS = 0 V f = 1 MHz Crss Ta = 25°C 1 0.01 0 −0.5 −1 Drain–source voltage 0.5 0.1 1 VDS (V) Drain – Source voltage t – ID 5000 (mW) 300 100 ton 50 tr 30 10 0.1 50 100 VDS (V) Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 585 mm2) 200 PD 500 Common Source VDD = 3 V VGS = 0 to 2.5 V Ta = 25°C Drain Power Dissipation (ns) t tf 1000 Switching time 3000 10 PD – Ta 250 toff 5 −1.5 1 100 10 Drain current ID 1000 150 100 50 0 0 20 40 60 80 100 Ambient temperature (mA) 4 120 Ta 140 160 (°C) 2008-05-27 SSM3K35MFV RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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