SSM3J36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36TU ○ Power Management Switches 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V) Unit: mm 2.1±0.1 Symbol Rating Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V DC ID -330 Pulse IDP -660 PD (Note1) 500 PD (Note2) 800 Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Drain power dissipation Unit mA +0.1 0.3 -0.05 1 2 3 0.166±0.05 Characteristics 0.7±0.05 Absolute Maximum Ratings (Ta = 25 °C) 0.65±0.05 1.7±0.1 2.0±0.1 • • mW UFM 1: Gate 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2U1A absolute maximum ratings. Weight: 6.6 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Note2: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Marking Equivalent Circuit (top view) 3 3 PX 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below −1 mA for the SSM3J36TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. 1 2008-06-11 SSM3J36TU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Drain-source breakdown voltage Test Conditions Min Typ. Max V (BR) DSS ID = -1 mA, VGS = 0 V -20 ⎯ ⎯ V (BR) DSX ID = -1 mA, VGS = 8 V -12 ⎯ ⎯ Unit V Drain cutoff current IDSS VDS = -16 V, VGS = 0 V ⎯ ⎯ -10 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V Forward transfer admittance |Yfs| VDS = -3 V, ID = -100mA (Note3) 190 ⎯ ⎯ mS ID = -100mA, VGS = -4.5 V (Note3) ⎯ 0.95 1.31 ID = -80mA, VGS = -2.8 V (Note3) ⎯ 1.22 1.60 ID = -40mA, VGS = -1.8 V (Note3) ⎯ 1.80 2.70 ID = -30mA, VGS = -1.5 V (Note3) ⎯ 2.23 3.60 ⎯ 43 ⎯ ⎯ 10.3 ⎯ Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz Crss ⎯ 6.1 ⎯ Total Gate Charge Qg ⎯ 1.2 ⎯ Gate−Source Charge Qgs ⎯ 0.85 ⎯ Gate−Drain Charge Qgd ⎯ 0.35 ⎯ Switching time VDS = -10 V, IDS= -330mA VGS = -4 V Turn-on time ton VDD = -10 V, ID = -100mA ⎯ 90 ⎯ Turn-off time toff VGS = 0 to -2.5 V, RG = 50Ω ⎯ 200 ⎯ ⎯ 0.88 1.2 Drain-source forward voltage VDSF ID =330mA, VGS = 0 V (Note3) Ω pF nC ns V Note3: Pulse test Switching Time Test Circuit (a) Test circuit 0 OUT (b) VIN 0V 10% IN RG −2.5V 10 μs VDD 90% −2.5 V RL (c) VOUT VDD = −10 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton 2 tf toff 2008-06-11 SSM3J36TU ID – VDS -2.8V -4.5V -2.5V -500 (mA) -8V Common Source Ta = 25 °C -100 -10 Common Source VDS = -3 V Ta = 100 °C -1.8 V -400 -300 Drain current Drain current ID (mA) -600 ID – VGS -1000 ID -700 -1.5 V -200 VGS=-1.2 V -100 0 0 -0.5 -1.0 Drain-source voltage 25 °C − 25 °C -0.1 -0.01 0 -1.5 VDS -1 -1.0 (V) Gate-source voltage RDS (ON) – VGS VGS (V) RDS (ON) – ID 5 5 ID =-100mA Common Source Ta = 25°C Common Source Ta = 25°C 4 Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) -2.0 3 2 25 °C Ta = 100 °C 1 4 3 -1.5 V -1.8 V 2 -2.8 V 1 VGS = -4.5 V − 25 °C 0 0 -2 -4 -6 Gate-source voltage VGS 0 -8 0 (V) -100 -200 Drain current RDS (ON) – Ta -500 ID (mA) -600 -700 Vth – Ta 4 -40mA / -1.8 V -30mA / -1.5V 3 -80mA / -2.8 V 2 1 ID = -100mA / VGS = -4.5 V 0 Common Source Vth (V) Common Source Gate threshold voltage Drain-source ON-resistance RDS (ON) (Ω) -400 -1.0 5 0 −50 -300 50 Ambient temperature 100 Ta VDS = -3 V ID = -1 mA -0.5 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2008-06-11 IDR – VDS |Yfs| – ID 1000 1000 Common Source VGS = 0 V (mA) Common Source VDS = -3 V Ta = 25°C ⎪Yfs⎪ Forward transfer admittance IDR 300 Drain reverse current (mS) SSM3J36TU 100 30 10 -100 -10 -1 Drain current ID (pF) IDR G S 10 Ta =100 °C 25 °C 1 −25 °C 0.4 0.2 (mA) 0.8 0.6 Drain-source voltage VDS (ns) C 1.2 (V) Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 50Ω Ciss 30 1.0 t – ID 10000 50 1000 toff 10 Switching time t Capacitance 100 0.1 0 -1000 C – VDS 100 D Coss Crss 5 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 3 1 -0.1 -1 -10 Drain-source voltage 100 ton tr 10 -100 VDS tf -1 -10 (V) -100 Drain current ID -1000 (mA) PD – Ta Dynamic Input Characteristic -8 Drain power dissipation PD (mW) Common Source (V) VGS Gate-source voltage 1000 ID = -0.33 A Ta = 25°C -6 VDD =-10V -4 VDD = - 16 V -2 0 0 1 Total Gate Charge 2 Qg 800 a 600 b 400 200 0 -40 3 (nC) a: Mounted on ceramic board (25.4mm × 25.4mm × 0.8mm , 2 Cu Pad: 645 mm ) b: Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad: 645 mm ) -20 0 20 40 60 80 Ambient temperature 4 100 120 140 Ta (°C) 160 2008-06-11 SSM3J36TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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