SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8-V drive • Low ON-resistance: Unit: mm RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±8 V DC ID -2.3 Pulse IDP -4.6 PD (Note 1) 700 Drain current Power dissipation A mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 10 mg (typ.) Note 1: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 3 3 JJ2 1 2 1 2 1 2010-01-26 SSM3J304T Electrical Characteristics (Ta = 25°C) Characteristic Symbol Drain-source breakdown voltage Min Typ. Max Unit V (BR) DSS ID = -1 mA, VGS = 0 -20 ⎯ ⎯ V (BR) DSX ID = -1 mA, VGS = +8 V -12 ⎯ ⎯ VDS = -20 V, VGS = 0 ⎯ ⎯ -10 μA Drain cutoff current IDSS Gate leakage current IGSS Gate threshold voltage Vth Forward transfer admittance ⏐Yfs⏐ Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Switching time Test Condition Turn-on time ton Turn-off time toff Drain-source forward voltage VDSF VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA -0.3 ⎯ -1.0 V (Note 2) 2.4 4 ⎯ S ID = -1.0 A, VGS = -4 V (Note 2) ⎯ 88 127 ID = -0.5 A, VGS = -2.5 V (Note 2) ⎯ 120 168 ID = -0.2 A, VGS = -1.8 V (Note 2) ⎯ 172 297 ⎯ 335 ⎯ ⎯ 70 ⎯ ⎯ 56 ⎯ ⎯ 6.1 ⎯ ⎯ 4.4 ⎯ VDS = -3 V, ID = -1 mA VDS = -3 V, ID = -1 A VDS = -10 V, VGS = 0, f = 1 MHz VDS = -16 V, IDS = - 2.3 A, VGS = - 4 V ⎯ 1.7 ⎯ VDD = -10 V, ID = -1A, ⎯ 20 ⎯ VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 20 ⎯ ⎯ 0.85 1.2 ID = 2.3 A, VGS = 0 (Note 2) mΩ pF nC ns V Note 2: Pulse test Switching Time Test Circuit (a) Test circuit −2.5 V OUT 0V IN RG 0 (b) VIN RL VDD× VDD = − 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 90% 10% -2.5 V (c) VOUT VDS (ON) 90% 10% VDD tf tr ton to Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. ) Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2010-01-26 SSM3J304T ID - VGS ID - VDS -5 -10 -10 -4 -4 Common Common Source Source VDS VDS == -3 V Common Source Common Source Ta = 25 Ta=25°C℃ -2.5 Pulse test -1 -3 Drain Current ID (A) Drain Current ID (A) Pulse test -1.8 -2 -0.1 25℃ -25℃ Ta = 85℃ -0.01 -1.5 -1 -0.001 VGS = -1.2 V -0.0001 0 0 -0.2 -0.4 -0.6 -0.8 0 -1 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 Gate-Source Voltage VGS (V) Drain-Source Voltage VDS (V) RDS (ON) - Ta RDS (ON) - VGS 300 300 Common CommonSource Source = 25℃ TaTa=25°C -0.5 A Common CommonSource Source Pulse test Pulse test -1.8 V,-0.2 A 250 Drain-Source ON-Resistance RDS (ON) (mΩ) Drain-Source ON-Resistance RDS (ON) (mΩ) ID = -1 A -0.2 A 200 100 200 -2.5 V,-0.5 A 150 100 VGS = -4 V,ID = -1 A 50 0 0 0 1 2 3 4 5 6 7 8 9 -60 10 -35 -10 15 65 90 115 140 Ambient Temperature Ta (℃ ) Gate-Source Voltage VGS (V) Vth - Ta RDS (ON) - ID -1.4 300 CommonSource Source Common Ta = 25℃ Ta=25°C Pulse test 250 200 -2.5 V 150 -4 V 100 Common Source ID = -1 mA VDS = -3 V -1.2 Gate Threshold Voltage Vth (V) VGS = -1.8 V Drain-Source ON-Resistance RDS (ON) (mΩ) 40 50 -1 -0.8 -0.6 -0.4 -0.2 -0 0 0 -1 -2 -3 -4 -25 -5 0 25 50 75 100 125 150 Ambient Temperature Ta (℃ ) Drain Current ID (A) 3 2010-01-26 SSM3J304T |Yfs| - ID IDR - VDS 10 10 Common CommonSource Source VDS VDS== -3 -3 V V Ta = 25℃ Ta=25°C Ta = 85℃ Drain Reverse Current IDR (A) Pulse test Forward Transfer Admittance |Yfs| (S) CommonSource Source Common VGS= =0 0 VGS Ta=25°C TaPulse = 25℃ test 25℃ -25℃ 1 25℃ 1 -25℃ 0.1 Ta = 85℃ 0.01 0.001 0.1 -0.01 -0.1 -1 0 -10 0.2 0.4 0.8 1 1.2 1.4 t - ID C - VDS 1000 1000 Switching Time t (ns) 100 Coss Crss Common Source VGS = 0 V f = 1 MHz Ta = 25℃ 10 -0.1 -1 -10 Common Source Common Source VDD = -10 V VDD=-10V VGS = 0 ~ VGS=0 to 2.5V-2.5 V Ta = 25 Ta=25℃ ℃ toff Ciss 100 tf ton 10 tr 1 0.01 -100 0.1 1 10 Drain Current ID (A) Drain-Source Voltage VDS (V) Dynamic Input Characteristic −10 VGS (V) Common Source Gate-Source voltage Capacitance C (pF) 0.6 Drain-Source Voltage VDS (V) Drain Current ID (A) ID = −2.3A −8 Ta = 25°C −6 VDD=−16V −4 −2 0 0 2 4 6 8 10 Total Gate Charge 12 Qg 14 16 (nC) 4 2010-01-26 SSM3J304T rth PD – Ta – tw 1000 b 100 a Single Pulse 10 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.8 mm2×3) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 Power dissipation PD (mW) Transient thermal impedance rth (°C/W) 1000 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 0.8 mm ×3) 800 a 600 400 b 200 0 -40 1000 -20 0 20 40 60 80 Ambient temperature (s) 5 100 120 140 160 Ta (°C) 2010-01-26 SSM3J304T RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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