TOSHIBA TA8258HQ

TA8258HQ
TOSHIBA Bipolar Linear Integrated
Circuit Silicon Monolithic
TA8258HQ
Dual Audio Power Amplifier
The TA8258HQ is dual audio power amplifier for consumer
applications.
This IC provides an output power of 20 watts per channel
(at VCC = 37 V, f = 1kHz, THD = 10%, RL = 8 Ω).
It is suitable for power amplifier of music center.
Features
•
Weight: 4.04 g (typ.)
High output power: Pout = 20 W/channel (Typ.)
(VCC = 37 V, RL = 8 Ω, f = 1 kHz, THD = 10%)
•
Low noise: Vno = 0.14 mVrms (Typ.)
(VCC = 37 V, RL = 8 Ω, GV = 34dB, Rg = 10 kΩ, BW = 20 Hz~20 kHz)
•
Very few external parts.
•
Built in audio muting circuit.
•
Built in thermal shut down protector circuit.
•
Built in output shifted to GND protection circuit. (AC short)
•
Available for using same PCB layout with: TA8200AH, TA8211AH, TA8216H
•
Operation supply voltage range (Ta = 25°C)
: VCC (opr) = 15~42 V
The TA8258HQ is plated with lead-free lead finishes, but the silicon pellet is attached to a heatsink with
lead-containing solder paste.
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TA8258HQ
Block Diagram
VCC
6
Ripple Filter
IN1
4
9
VCC
IN1
OUT1
AMP1
5
3
1
R
400 Ω
Pre-GND
400 Ω
RL
C
20 kΩ
PW-GND 10
C
20 kΩ
RL
R
AMP2
IN2
7
OUT2
2 IN2
Mute. TC
Mute
8
11
12
Application Information
1. Voltage gain
The closed loop voltage gain is determined by R1, R2.
Input
Output
4/2
R + R2
(dB)
G V = 20λog 1
R2
5/1
20 kΩ + 400 Ω
= 20λog
400 Ω
= 34 (dB)
7/12
R2
R1
400 Ω
20 kΩ
Figure 1
GV
R + R2 + R3
= 20 λog 1
(dB)
R2 + R3
When R3 = 220 Ω
GV ∼
− 30 (dB)
is given.
Input
Output
4/2
R3
5/1
7/12
R2
R1
400 Ω
20 kΩ
Figure 2
Toshiba has confirmed that the GV (min) is approximately 28 (dB) on a regular printed circuit board. However,
if the value of R2 + R3 is larger, the feedback voltage increases and oscillation will start. Determine the value of
R2 + R3 to ensure proper startup behavior under actual usage conditions.
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2. Muting
This product has an excellent muting system.
Audio muting
This IC is possible to make audio muting operation by using 11 pin muting terminal.
Figure 3 shows the equivalent circuit in the muting circuit.
By reducing the voltage of 11 pin to 2.8 V or less, Q1 will be ON.
Also the base voltage of Q2 in the differential circuit that has Q2 and Q3 will be down.
When Q2 is OFF, I2 and I5 dummy circuits will be operated, and it will shut down the input.
However, the bias circuit is operating after muting, and it takes power supply current at no signal.
8 pin is the capacitor terminal for reducing the pop noise, and it can make the time constant longer by
inserting the capacitor externally. If 11 pin is not used, connect 11 pin and 8 pin, then set the voltage
abode 4 V.
(2) IC internal muting at VCC OFF
When VCC = 8 V or less at VCC off, the detection circuit at VCC off is operated. And the base voltage of
Q1 is reduced and the muting is operated in IC.
(1)
Dummy amp.
Main amp.
9
VCC
I2
I3
The detection
circuit at
VCC → OFF
Q2
Q3
100 Ω
Mute
I5
30 kΩ
Q1
11
I4
Q5
I6
Q6
The
reference
voltage is
equal.
8
Q4
I7
Q7
Q10
Q8
Q9
Q11
20 kΩ
OUT
2/4
1/5
IN
NF
Mute. TC
7/12
400 Ω
I1
30 kΩ
Reference
voltage
Figure 3
3. The Mounting Place of an Integrated Circuit
This IC cannot withstand the strong electromagnetic fields generated by a CRT. These are likely to cause
the device to exhibit malfunctions such as leakage.
Please ensure that the IC is kept away from CRT.
4. Preventive Measures Against Oscillation
To prevent oscillation, it is advisable to use capacitors made of polyester film, which have low
temperature and frequency fluctuation characteristics, as C.
The resistance R in series with C performs phase correction at high frequencies and improves the
oscillation allowance.
(1) Capacitor rating and type
(2) PCB layout
Note 1: Since the oscillation allowance varies according to the PCB layout, it is recommended that a standard
Toshiba PCB be used as a reference for design.
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5. Heat-sink
Be aware of the heat-sink capacity.
Use a heat-sink that has high heat conduction.
Note 2: Please connected a Heat-sink to GND potential, otherwise THD may deteriorate.
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TA8258HQ
Standard PCB
12
1
IN-2
GND
IN-1
TA8200AH/11AH/16H/58H
TOSHIBA
OUT2
OUT1
VCC
(bottom view)
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TA8258HQ
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VCC
50
V
Output current (Peak/ch)
IO (peak)
3.5
A
Power dissipation
PD (Note 3)
25
W
Supply voltage
Operation temperature
Topr
−20 to 75
°C
Storage temperature
Tstg
−55 to 150
°C
Note 3: Derated above Ta = 25°C in the proportion of 200 mW/°C.
Electrical Characteristics
(unless otherwise specified VCC = 37 V, RL = 8 Ω, Rg = 600 Ω, f = 1 kHz, Ta = 25°C)
Characteristics
Symbol
Test
Circuit
ICCQ
⎯
Quiescent current
Test Condition
Min
Typ.
Max
Unit
Vin = 0
⎯
75
130
mA
Pout (1)
⎯
THD = 10%
17
20
⎯
Pout (2)
⎯
THD = 1%
⎯
15
⎯
THD
⎯
Pout = 2 W
⎯
0.05
0.2
%
Voltage gain
GV
⎯
Vout = 0.775 Vrms (0dBm)
32.5
34.0
35.5
dB
Input resistance
RIN
⎯
⎯
30
⎯
kΩ
Ripple rejection ratio
R.R.
⎯
fripple = 100 Hz
Vripple = 0.775 Vrms (0dBm)
−48
−60
⎯
dB
Output noise voltage
Vno
⎯
Rg = 10 kΩ,
BW = 20 Hz~20 kHz
⎯
0.14
0.3
mVrms
Cross talk
C.T.
⎯
Rg = 10 kΩ,
Vout = 0.775 Vrms (0dBm)
−50
−60
⎯
dB
Mute on voltage
Mute-on
⎯
Mute on
GND
⎯
1.4
V
Mute off voltage
Mute-off
⎯
Mute off
3.7
⎯
10
V
ATT
⎯
Vout = 0.775 Vrms → Mute
−50
−60
⎯
dB
Output power
Total harmonic distortion
Mute ATT
⎯
W
Typ. DC Voltage of Each Terminal (VCC = 28 V, Ta = 25°C)
Terminal No.
1
2
3
4
5
6
7
8
9
10
11
12
DC voltage (V)
2.5
2.8
GND
2.8
2.5
12.5
19.4
5.1
VCC
GND
4.8
19.4
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Test Circuit
1000 µF
IN1
OUT1
AMP1
5
3
1
400 Ω
20 kΩ
Pre-GND
400 Ω
PW-GND 10
20 kΩ
AMP2
OUT2
IN2
Mute. TC
Mute
8
11
*1
12
10 µF
2.2 µF
2
1000 µF
7
RL
0.12 µF 0.12 µF
4
2.2 Ω
47 µF 47 µF
2.2 µF
9
2.2 Ω
47 µF
6
Ripple Filter
VCC
RL
1000 µF
Vth ∼
− 2.8 V
*1: The capacitor for reducing POP noise at mute ON.
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THD – Pout
THD – Pout
100
(%)
VCC = 37 V
50 R = 8 Ω
L
30 Filter 100: ~30 k
1 k: 400~30 k
10 k: 400~
10
Total harmonic distortion THD
Total harmonic distortion THD
(%)
100
5
3
1
0.5
0.3
f = 10 kHz
0.1
100 Hz
0.05
1 kHz
0.03
0.1
0.3 0.5
1
3
Output power
5
10
POUT
30 50
50
30
RL = 8 Ω
f = 1 kHz
Filter: 400~30 k
10
5
3
VCC = 15 V
0.1
0.05
0.03
0.3 0.5
(W)
1
3
Output power
0.5
RL = 8 Ω
Pout = 1 W
VCC = 37 V
Filter
~30 k (f = 20~800)
400~30 k (f = 1 k~2 k)
400~80 k (f = 4 k~6 k)
400~ (f = 8 k~40 k)
0.3
0.1
0.05
OUT2
0.03
OUT1
0.01
30
100
300
1k
3k
10k
30k
30
25
100
300
(Hz)
3k
Frequency f
−30
−40
OUT1
−50
OUT2
−60
−70
1k
Frequency f
30k
100k
(Hz)
3k
10k
30k
fripple = 100 Hz
RL = 8 Ω
Vripple = 0.775Vrms
VCC = 37 V
−40
R.R.
−20
(dB)
Rg = 620 Ω
RL = 8 Ω
Vripple = 0.775Vrms
VCC = 37 V
−10
10k
R.R. – Rg
Ripple rejection ratio
(dB)
R.R.
Ripple rejection ratio
1k
−30
300
(W)
35
R.R. – f
100
100
RL = 8 Ω
Vout = 0.775 Vrms
VCC = 37 V
15
20 30
100k
0
30
30 50
20
Frequency f
−80
POUT
40
GV (dB)
1
10
45
Voltage gain
(%)
Total harmonic distortion THD
3
5
GV – f
THD – f
10
5
42
0.5
0.3
0.1
100
37
1
−50
OUT1
−70
−80
100k
(Hz)
OUT2
−60
30
100
0.3
1k
3k
10k
Signal source resistance Rg
8
30
100k
(Ω)
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TA8258HQ
C.T. – f
C.T. – Rg
0
−10
−30
−40
−50
OUT2 → OUT1
−60
f = 1 kHz
RL = 8 Ω
VCC = 37 V
Vout = 0.775Vrms
−40
−20
Cross talk C.T. (dB)
Cross talk C.T. (dB)
−30
Rg = 620 kΩ
RL = 8 Ω
VCC = 37 V
−50
−60
OUT2 → OUT1
OUT1 → OUT2
−70
−70
−80
OUT1 → OUT2
30
100
300
1k
3k
Frequency f
10k
30k
−80
100k
30
100
(Hz)
300
Vno – Rg
(W)
30
Output power Pout
(mVrms)
Output noise voltage VNO
RL = 8 Ω
VCC = 37 V
B.W = 20Hz~20kHz
500
400
300
OUT2
200
OUT1
30
100
300
1k
10k
3k
Signal source resistance Rg
30k
25
20
15
10
0
10
100k
5
10
20
25
30
VCC
35
RL = 8 Ω
VCC = 37 V
45
(V)
25
f = 1 kHz
RL = 8 Ω
42 V
40
ICCQ
20
40
VOUT
(W)
Power dissipation PD
Vin = 0
20
40
PD – POUT
60
Output DC voltage VOUT (V)
(mA)
15
Supply voltage
ICCQ, VOUT – VCC
ICCQ
(Ω)
f = 1 kHz
RL = 8 Ω
THD = 10 %
(Ω)
120
Quiescent current
100k
5
100
60
30k
Pout – VCC
600
80
10k
35
700
100
3k
Signal source resistance Rg
800
0
1k
20
37 V
15
10
5
15 V
0
0
10
20
30
Supply voltage
40
VCC
50
0
0
0
60
(V)
5
10
15
Output power Pout
9
20
25
(W)
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TA8258HQ
ATT – Vmute
THD – Ta
10
(%)
Total harmonic distortion THD
Mute ATT (dB)
0
f = 1 kHz
RL = 8 Ω
Vout = 0.775Vrms
VCC = 37 V
−20
−40
−60
−80
8
1
2
3
Mute control voltage
0.2
0.1
0.05
OUT2
0.03
OUT1
0.01
−40
4
RL = 8 Ω
VCC = 37 V
f = 1 kHz
Pout = 2 W
−20
Vmute (V)
0
20
40
Ambient temperature
60
80
100
Ta (°C)
ICCQ – Ta
R.R. – Ta
0
(mA)
−30
−40
−50
OUT2
−60
OUT1
−70
−80
−40
−20
0
RL = 8 Ω
80
ICCQ
−20
VCC = 37 V
100
RL = 8 Ω
Vripple = 0.775 Vrms
VCC = 37 V
fripple = 100 Hz
Quiescent current
Ripple rejection ratio
R.R.
(dB)
Rg = 620 Ω
−10
20
40
Ambient temperature
60
80
60
40
20
0
−40
100
Ta (°C)
−20
0
20
40
Ambient temperature
60
80
100
Ta (°C)
PD MAX – Ta
Allowable power dissipation PD MAX
(w)
30
1: INFINITE HEAT SINK
25
2: 4.1°C/W Aℓ HEAT SINK
1
3: 9.5°C/W Aℓ HEAT SINK
20
2
15
10
3
5
0
0
25
50
75
100
Ambient temperature
125
150
175
Ta (°C)
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TA8258HQ
Package Dimensions
Weight: 4.04 g (typ.)
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TA8258HQ
• Strong Electrical and Magnetic Fields
Devices exposed to strong magnetic fields can undergo a polarization phenomenon in their plastic material, or
within the chip, which gives rise to abnormal symptoms such as impedance changes or increased leakage current.
Failures have been reported in LSIs mounted near malfunctioning deflection yokes in TV sets. In such cases the
device’s installation location must be changed or the device must be shielded against the electrical or magnetic field.
Shielding against magnetism is especially necessary for devices used in an alternating magnetic field because of
the electromotive forces generated in this type of environment.
• Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over
current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute
maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or
load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the
effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time
and insertion circuit location, are required.
• If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or
the negative current resulting from the back electromotive force at power OFF. For details on how to connect a
protection circuit such as a current limiting resistor or back electromotive force adsorption diode, refer to individual
IC datasheets or the IC databook. IC breakdown may cause injury, smoke or ignition.
• Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection
function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.
• Carefully select external components (such as inputs and negative feedback capacitors) and load components
(such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as
input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to
a speaker with low input withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over
current can cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied
Load (BTL) connection type IC that inputs output DC voltage to a speaker directly.
• Over current Protection Circuit
Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all
circumstances. If the Over current protection circuits operate against the over current, clear the over current status
immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum
ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In
addition, depending on the method of use and usage conditions, if over current continues to flow for a long time
after operation, the IC may generate heat resulting in breakdown.
• Thermal Shutdown Circuit
Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the Thermal shutdown circuits
operate against the over temperature, clear the heat generation status immediately. Depending on the method of
use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit
to not operate properly or IC breakdown before operation.
• Heat Radiation Design
When using an IC with large current flow such as power amp, regulator or driver, please design the device so that
heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition.
These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in
IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into
considerate the effect of IC heat radiation with peripheral components.
• Installation to Heat Sink
Please install the power IC to the heat sink not to apply excessive mechanical stress to the IC. Excessive
mechanical stress can lead to package cracks, resulting in a reduction in reliability or breakdown of internal IC
chip. In addition, depending on the IC, the use of silicon rubber may be prohibited. Check whether the use of
silicon rubber is prohibited for the IC you intend to use, or not. For details of power IC heat radiation design and
heat sink installation, refer to individual technical datasheets or IC databooks.
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RESTRICTIONS ON PRODUCT USE
060116EBF
• The information contained herein is subject to change without notice. 021023_D
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. 021023_A
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk. 021023_B
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others. 021023_C
• The products described in this document are subject to the foreign exchange and foreign trade laws. 021023_E
• This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product. 030619_R
About solderability, following conditions were confirmed
• Solderability
(1) Use of Sn-37Pb solder Bath
· solder bath temperature = 230°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature = 245°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
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