TOSHIBA TA8271HQ

TA8271HQ
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA8271HQ
Max Power 41 W BTL × 4 ch Audio Power IC
The TA8271HQ is 4 ch BTL audio power amplifier for car audio
application.
This IC can generate more high power: POUTMAX = 41 W as it
is included the pure complementary PNP and NPN transistor
output stage.
It is designed low distortion ratio for 4 ch BTL audio power
amplifier, built-in stand-by function and muting function.
Additionally, the AUX amplifier and various kind of protector
for car audio use is built-in.
Weight: 7.7 g (typ.)
Features
•
High power: POUTMAX (1) = 41 W (typ.)
(VCC = 14.4 V, f = 1 kHz, JEITA max, RL = 4 Ω)
: POUTMAX (2) = 37 W (typ.)
(VCC = 13.7 V, f = 1 kHz, JEITA max, RL = 4 Ω)
: POUT (1) = 24 W (typ.)
(VCC = 14.4 V, f = 1 kHz, THD = 10%, RL = 4 Ω)
: POUT (2) = 21 W (typ.)
(VCC = 13.2 V, f = 1 kHz, THD = 10%, RL = 4 Ω)
•
Low distortion ratio: THD = 0.02% (typ.)
(VCC = 13.2 V, f = 1 kHz, POUT = 5 W, RL = 4 Ω)
•
Low noise: VNO = 0.18 mVrms (typ.)
•
Built-in stand-by switch function (pin 4)
•
Built-in muting function (pin 22)
•
Built-in AUX amplifier from single input to 2 channels output (pin 16)
•
Built-in various protection circuit
(VCC = 13.2 V, Rg = 0 Ω, GV = 34dB, BW = 20 Hz~20 kHz)
:
•
Thermal shut down, over voltage, out to GND, out to VCC, out to out short
Operating supply voltage: VCC (opr) = 9~18 V
Note 1: Install the product correctly. Otherwise, it may result in break down, damage and/or degradation to the
product or equipment.
Note 2: These protection functions are intended to avoid some output short circuits or other abnormal conditions
temporarily. These protect functions do not warrant to prevent the IC from being damaged.
- In case of the product would be operated with exceeded guaranteed operating ranges, these
protection features may not operate and some output short circuits may result in the IC being
damaged.
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TA8271HQ
20
VCC1
6
VCC2
OUT1 (+)
C1
11
PW-GND1 8
OUT2 (+)
12
16
15
3
17
PW-GND3 18
RL
19
21
IN4
PW-GND4 24
OUT4 (−)
RL
23
22
R1
MUTE
25
C8
MUTE2
4
C7
STBY
10
R2
RIP
C4
13
C2
PRE-GND
RL
IN3
OUT4 (+)
14
5
AUX IN
OUT3 (−)
C1
7
PW-GND2 2
OUT3 (+)
C1
RL
IN2
OUT2 (−)
C6
9
IN1
OUT1 (−)
C1
C3
1
TAB
C5
Block Diagram
: PRE-GND
: PW-GND
Note3: Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for
explanatory purpose.
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Caution and Application Method
(Description is made only on the single channel.)
1. Voltage Gain Adjustment
This IC has no NF (negative feedback) terminals. Therefore, the voltage gain can’t adjusted, but it makes
the device a space and total costs saver.
Amp. 2A
Amp. 1
Input
Amp. 2B
Figure 1 Block Diagram
The voltage gain of Amp.1:
GV1 = 8 dB
The voltage gain of Amp.2A, B:
GV2 = 20 dB
The voltage gain of BLT Connection: GV (BTL) = 6 dB
Therefore, the total voltage gain is decided by expression below.
GV = GV1 + GV2 + GV (BTL) = 8 + 20 + 6 = 34 dB
2. Stand-by SW Function (pin 4)
By means of controlling pin 4 (stand-by terminal)
to high and low, the power supply can be set to ON
and OFF. The threshold voltage of pin 4 is set at
about 3VBE (typ.), and the power supply current is
about 2 µA (typ.) at the stand-by state.
Power
ON
OFF
0~1.5
OFF
ON
3~VCC
ON Power
OFF
4
10 kΩ
≈ 2VBE
to BIAS
CUTTING CIRCUIT
Control Voltage of pin 4: VSB
Stand-by
VCC
VSB (V)
Figure 2 With pin 4 set to High,
Power is turned ON
Adjustage of Stand-by SW
(1)
(2)
Since VCC can directly be controlled to ON or OFF by the microcomputer, the switching relay can be
omitted.
Since the control current is microscopic, the switching relay of small current capacity is satisfactory
for switching
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RELAY
Large current capacity switch
BATTERY
BATTERY
VCC
FROM
MICROCOMPUTER
VCC
– Conventional Method –
Small current capacity switch
BATTERY
DIRECTLY FROM
MICROCOMPUTER
BATTERY
Stand-By VCC
Stand-By VCC
– Stand-by Switch Method –
Figure 3
3. Muting Function (pin 22)
By means of controlling pin 22 less than 0.5 V, it can make the audio muting condition.
The muting time constant is decided by R1, C4 and C8 and these parts is related the pop noise at power
ON/OFF.
The series resistance; R1 must be set up less than 5 kΩ.
The muting function have to be controlled by a transistor, FET and µ-COM port which has IMUTE > 50
µA ability.
ATT – VMUTE
0
ATT
Mute attenuation
25
C8
I (20 µA)
IMUTE (OFF)
(dB)
−10
R1
C4
22
A
IMUTE
VMUTE
R1 = 5 kΩ
−20
−30
−40
R1 = 2.2 kΩ
−50
−60
−70
−80
VCC = 13.2 V
Po = 10 W
−90
RL = 4 Ω
−100
1.2
f = 1 kHz
1.4
1.6
1.8
2.0
2.2
Point A voltage: VMUTE
Figure 4 Muting Function
2.4
2.6
2.8
(V)
Figure 5 Mute Attenuation − VMUTE (V)
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4. AUX Input (pin 16)
20dB AMP.
The pin 16 is for input terminal of AUX
amplifier.
The total gain is 0dB by using of AUX amplifier.
Therefore, the µ-COM can directly drive the
AUX amplifier.
BEEP sound or voice synthesizer signal can be
input to pin 16 directly.
When AUX function is not used, this pin must be
connected to PRE-GND (pin 13) via a capacitor.
IN
OUT (+)
OUT (−)
AUX AMP
µ-COM
AUX-IN
16
−20dB
Figure 6
AUX Input
5. Prevention of speaker burning accident (In Case of Rare Short Circuit of Speaker)
When the direct current resistance between OUT + and OUT − terminal becomes 1 Ω or less and output
current over 4 A flows, this IC makes a protection circuit operate and suppresses the current into a speaker.
This system makes the burning accident of the speaker prevent as below mechanism.
<The guess mechanism of a burning accident of the speaker>
Abnormal output offset voltage (voltage between OUT + and OUT −) over 4 V is made by the external
circuit failure.(Note 4)
↓
The speaker impedance becomes 1 Ω or less as it is in a rare short circuit condition.
↓
The current more than 4 A flows into the speaker and the speaker is burned.
Current into a speaker
Operating point of protector
Less than 4 Ω
About 1 Ω
4Ω
Speaker impedance
Figure 9
Note 4: It is appeared by biased input DC voltage
(for example, large leakage of the input capacitor, short-circuit between copper patterns of PCB.)
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Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VCC (surge)
50
V
DC supply voltage
VCC (DC)
25
V
Operation supply voltage
VCC (opr)
18
V
Output current (peak)
IO (peak)
9
A
Power dissipation
PD (Note5)
125
W
Peak supply voltage (0.2 s)
Operation temperature
Topr
−40~85
°C
Storage temperature
Tstg
−55~150
°C
Package thermal resistance θj-T = 1°C/W (typ.)
(Ta = 25°C, with infinite heat sink)
The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not
be exceeded during operation, even for an instant. If any of these rating would be exceeded during operation, the
device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no
longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage and/or
degradation to any other equipment. Applications using the device should be designed such that each maximum
rating will never be exceeded in any operating conditions. Before using, creating and/or producing designs, refer to
and comply with the precautions and conditions set forth in this documents.
Note5:
Electrical Characteristics
(unless otherwise specified VCC = 13.2 V, f = 1 kHz, RL = 4 Ω, Ta = 25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
mA
ICCQ
⎯
VIN = 0
⎯
200
400
POUT MAX (1)
⎯
VCC = 14.4 V, max Power
⎯
41
⎯
POUT MAX (2)
⎯
VCC = 13.7 V, max Power
⎯
37
⎯
POUT (1)
⎯
VCC = 14.4 V, THD = 10%
⎯
24
⎯
POUT (2)
⎯
THD = 10%
19
21
⎯
THD
⎯
POUT = 5 W
⎯
0.02
0.2
Voltage gain
GV
⎯
VOUT = 0.775 Vrms (0dBm)
32
34
36
Voltage gain ratio
∆GV
⎯
VOUT = 0.775 Vrms (0dBm)
−1.0
0
1.0
VNO (1)
⎯
Rg = 0 Ω, DIN45405
⎯
0.20
⎯
VNO (2)
⎯
Rg = 0 Ω, BW = 20 Hz~20 kHz
⎯
0.18
0.42
Ripple rejection ratio
R.R.
⎯
frip = 100 Hz, Rg = 620 Ω
Vrip = 0.775 Vrms (0dBm)
40
50
⎯
dB
Cross talk
C.T.
⎯
Rg = 620 Ω
VOUT = 0.775 Vrms (0dBm)
⎯
60
⎯
dB
VOFFSET
⎯
⎯
−150
0
+150
mV
RIN
⎯
⎯
⎯
30
⎯
kΩ
µA
Quiescent current
Output power
Total harmonic distortion
Output noise voltage
Output offset voltage
Input resistance
Stand-by current
Stand-by control voltage
Mute control voltage
Mute attenuation
Note6:
(Note6)
ISB
⎯
Stand-by condition
⎯
2
10
VSB H
⎯
Power: ON
3.0
⎯
VCC
VSB L
⎯
Power: OFF
0
⎯
1.5
W
%
dB
mVrms
V
VM H
⎯
Mute: OFF
VM L
⎯
Mute: ON, R1 = 10 kΩ
0
⎯
0.5
⎯
V
ATT M
⎯
Mute: ON,
VOUT = 7.75 Vrms (20dBm) at
Mute: OFF.
80
90
⎯
dB
Open
Muting function have to be controlled by open and low logic, which logic is a transistor, FET and µ-COM port
of IMUTE > 50 µA ability.
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6
VCC2
OUT1 (+)
0.22 µF
C1
11
PW-GND1 8
OUT2 (+)
C1
12
C6
16
C1
15
14
3
17
PW-GND3 18
RL
19
21
IN4
PW-GND4 24
OUT4 (−)
RL
23
22
R1 5 kΩ
MUTE
25
C8 0.1 µF
MUTE2
4
C7 0.047 µF
STBY
10
R2 10 kΩ
RIP
C4 33 µF
13
C2 10 µF
PRE-GND
RL
IN3
OUT4 (+)
C1
5
AUX IN
OUT3 (−)
0.22 µF
7
PW-GND2 2
OUT3 (+)
0.22 µF
RL
IN2
OUT2 (−)
0.22 µF
9
IN1
OUT1 (−)
0.22 µF
C3
0.1 µF
20
VCC1
3900 µF
1
TAB
C5
Test Circuit
: PRE-GND
: PW-GND
Components in the test circuits are only used to obtain and confirm the device characteristics.
These components and circuits do not warrant to prevent the application equipment from malfunction or failure.
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T.H.D – POUT
T.H.D – POUT
100
100
(%)
10
f = 1 kHz
RL = 4 Ω
10
T.H.D
Total harmonic distortion
Total harmonic distortion
T.H.D
(%)
VCC = 13.2 V
RL = 4 Ω
1
10 kHz
100 Hz
0.1
1 kHz
1
13.2 V
9.0 V
0.1
16.0 V
0.01
0.1
1
10
0.01
0.1
100
Output power POUT (W)
1
Output power POUT
ICCQ – VCC
(W)
1
(%)
RL = ∞
T.H.D
VIN = 0
300
Total harmonic distortion
ICCQ
(mA)
100
T.H.D – f
400
Quiescent current
10
200
100
0
0
10
Power supply voltage
20
0.1
OUT3
OUT1, 2, 4
0.01
VCC = 13.2 V
RL = 4 Ω
Pout = 5 W
0.001
10
30
VCC (V)
100
1k
Frequency
8
10 k
100 k
f (Hz)
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VNO – Rg
R.R. – f
0
VCC = 13.2 V
RL = 4 Ω
250 BW = 20 Hz~20 kHz
R.R. (dB)
VCC = 13.2 V
200
Ripple rejection ratio
Output noise voltage
VNO
(µVrms)
300
150
100
50
0
10
100
1k
10 k
Signal source resistance
Rg
−10
RL = 4 Ω
Rg = 620 Ω
−20
Vrip = 0dBm
−30
−40
−50
−60
−70
10
100 k
100
(Ω)
Frequency
C.T. – f (OUT1)
10 k
100 k
f (Hz)
VCC = 13.2 V
RL = 4 Ω
−10
RL = 4 Ω
(dB)
(dB)
−20
C.T.
−30
C.T.
−30
−40
Cross talk
VOUT = 0dBm
−20
Cross talk
VOUT = 0dBm
−40
Rg = 620 Ω
−50
Rg = 620 Ω
−50
OUT1 → OUT2, 3, 4
OUT2 → OUT1, 3, 4
−60
−60
−70
10
100
1k
Frequency
10 k
−70
10
100 k
100
f (Hz)
1k
Frequency
C.T. – f (OUT3)
f (Hz)
C.T. – f (OUT4)
0
0
VCC = 13.2 V
VCC = 13.2 V
RL = 4 Ω
−10
(dB)
(dB)
−20
C.T.
−30
C.T.
−30
−40
Cross talk
−40
Rg = 620 Ω
−50
−60
1k
Frequency
10 k
Rg = 620 Ω
−50
OUT4 → OUT1, 2, 3
−60
OUT3 → OUT1, 2, 4
100
RL = 4 Ω
VOUT = 0dBm
−20
Cross talk
VOUT = 0dBm
−70
10
100 k
0
VCC = 13.2 V
−10
10 k
C.T. – f (OUT2)
0
−10
1k
−70
10
100 k
f (Hz)
100
1k
Frequency
9
10 k
100 k
f (Hz)
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TA8271HQ
GV – f
PD – POUT
40
70
PD (W)
60
30
25
Power dissipation
Voltage gain
GV
(dB)
35
20
15
10
VCC = 13.2 V
40
13.2 V
30
20
9V
10
RL = 4 Ω
5
16 V
50
f = 1 kHz
RL = 4 Ω
VOUT = 0dBm
0
10
0
100
1k
Frequency
10 k
100 k
f (Hz)
0
5
10
15
Output power POUT/ch
20
25
(C)
Allowable power dissipation
PD MAX.
(w)
PD MAX –Ta
120
(1)
INFINITE HEAT SINK
RθJC = 1°C/W
(2)
HEAT SINK (RθHS = 3.5°C/W)
100
(3)
80
RθJC + RθHS = 4.5°C/W
NO HEAT SINK
RθJA = 39°C/W
(1)
60
40
20
(2)
(3)
0
0
25
50
75
Ambient temperature
100
Ta
125
150
(°C)
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Package Dimensions
Weight: 7.7 g (typ.)
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About solderability, following conditions were confirmed
• Solderability
(1) Use of Sn-63Pb solder Bath
· solder bath temperature = 230°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature = 245°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
RESTRICTIONS ON PRODUCT USE
030619EBF
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product.
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