TOSHIBA TB6568KQ

TB6568KQ
TOSHIBA Bi-CMOS Integrated Circuit
Silicon Monolithic
TB6568KQ
Full-Bridge DC Motor Driver IC
The TB6568KQ is a full-bridge DC motor driver IC employing
the MOS process for output power transistors.
The low ON-resistance MOS process and PWM control enables
driving DC motors with high thermal efficiency.
Four operating modes are selectable via IN1 and IN2: clockwise
(CW), counterclockwise (CCW), Short Brake and Stop.
Features
•
Power supply voltage: 50 V (max)
•
Output current: 3 A (max)
•
Output ON-resistance: 0.55 Ω (typ.)
•
PWM control
•
CW/CCW/Short Brake/Stop modes
•
Overcurrent shutdown circuit (ISD)
•
Overvoltage shutdown circuit (VSD)
•
Thermal shutdown circuit (TSD)
•
Undervoltage lockout circuit (UVLO)
•
Dead time for preventing shoot-through current
Weight: 2.2 g (typ.)
Note: The following conditions apply to solderability:
About solderability, following conditions were confirmed
(1) Use of Sn-37Pb solder Bath
• solder bath temperature: 230°C
• dipping time: 5 seconds
• the number of times: once
• use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
• solder bath temperature: 245°C
• dipping time: 5 seconds
• the number of times: once
• use of R-type flux
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TB6568KQ
Block Diagram (application circuit example)
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is
required, especially at the mass production design stage.
Toshiba does not grant any license to any industrial property rights by providing these examples of application
circuits.
VM
5-V regulator
UVLO
VSD
TSD
ISD detection
ISD detection
OUT1
IN1
Control
Predriver
Motor
IN2
OUT2
ISD detection
ISD detection
ISD
GND
Pin Functions
Pin No.
Pin Name
Functional Description
1
IN1
Control signal input pin 1
2
IN2
Control signal input pin 2
3
OUT1
Output pin 1
4
GND
Ground pin
5
OUT2
Output pin 2
6
N.C.
No-connect
7
VM
Power supply voltage pin
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TB6568KQ
Absolute Maximum Ratings (Note) (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power supply voltage
VM
50
V
Output voltage
VO
50
V
Output current
IO (peak)
3
A
Input voltage
VIN
−0.3 to 5.5
V
Power dissipation
PD
1.25 (Note 1)
W
Operating temperature
Topr
−40 to 85
°C
Storage temperature
Tstg
−55 to 150
°C
Note: The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even
for a moment. Do not exceed any of these ratings.
Exceeding the rating (s) may cause the device breakdown, damage or deterioration, and may result injury by
explosion or combustion.
Please use the TB6568KQ within the specified operating ranges.
Note 1: No heatsink
Operating Ranges
Characteristics
Symbol
Rating
Unit
Power supply voltage
VMopr
10 to 45
V
PWM Frequency
fPWM
Up to 100
kHz
IO (Ave.)
Up to 1.5 (Note 2) (given as a guide)
A
Output Current
Note 2: Ta = 25°C, the TB6568KQ is mounted on the PCB (70 × 50 × 1.6 (mm), double-sided, Cu thickness: 50 μm,
Cu dimension: 67%) with no heatsink.
*:
The average output current shall be increased or decreased depending on usage conditions such as ambient
temperature, a presence/absence of a heatsink and IC mounting method.
Please use the average output current so that the junction temperature of 150°C (Tj) and the absolute maximum
output current rating of 3 A are not exceeded.
**: Connecting the metal plate on the rear surface of the TB6568KQ to a heatsink allows for improvement of the
power dissipation capability of the TB6568KQ. Please consider heat dissipation efficiency when designing the
board layout.
Moreover, this metal plate is electrically connected to the rear surface of the TB6568KQ; therefore, it must always
be insulated or shorted to ground.
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Electrical Characteristics (unless otherwise specified, Ta = 25°C, VM = 24 V)
Characteristics
Power supply current
Input voltage
Control circuit
IN1 pin,
Hysteresis voltage
IN2 pin
Input current
PWM frequency
Symbol
Test Condition
Min
Typ.
Max
ICC1
Stop mode
⎯
2.5
8
ICC2
CW/CCW mode
⎯
2.5
8
ICC3
Short Brake mode
⎯
2.5
8
VINH
2
⎯
5.5
VINL
0
⎯
0.8
Unit
mA
V
⎯
0.4
⎯
IINH
VIN = 5 V
⎯
50
75
IINL
VIN = 0 V
⎯
⎯
5
Duty: 50 %
⎯
100
⎯
kHz
VIN (HYS)
fPWM
μA
PWM minimum pulse width
fPWM (TW)
(value given as a guide)
1
⎯
⎯
μs
Output ON-resistance
RON (U + L)
IO = 3 A
⎯
0.55
0.9
Ω
IL (U)
VM = 50 V, VOUT = 0 V
−2
⎯
⎯
IL (L)
VM = VOUT = 50 V
⎯
⎯
2
VF (U)
IO = 3 A
⎯
1.3
1.7
VF (L)
IO = −3 A
⎯
1.3
1.7
Output leakage current
Diode forward voltage
4
μA
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TB6568KQ
Thermal Performance Characteristics
Thermal Resistance
PD – Ta
Power Dissipation
PD
(W)
14
(1) With a heatsink (10°C/W):
Ta = 25°C, PD = 7.8 W
12
(2) No heatsink:
Ta = 25°C, PD = 1.25 W
10
8
*: With an infinite heatsink:
Rth (j-c) = 6°C/W
(1)
6
4
2
Pulse width
(2)
0
0
25
50
75
Ambient temperature
100
Ta
125
t
(s)
150
(°C)
I/O Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory
purposes.
Pin No.
IN2 (2)
I/O Internal Circuit
Digital input
10 kΩ
(typ.)
IN1 (IN2)
L: 0.8 V (max)
100 kΩ
(typ.)
IN1 (1)
I/O Signal
H: 2 V (min)
VM
5-V regulator
OUT1 (3)
OUT1 (OUT2)
OUT2 (5)
Operating supply voltage range
GND (4)
VM = 10 to 45 V
VM (7)
GND
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Functional Description
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory
purposes.
Timing charts may be simplified for explanatory purposes.
1. I/O Function Table
Input
Output
IN1
IN2
OUT1
OUT2
H
H
L
L
Short Brake
L
H
L
H
CW/CCW
H
L
H
L
CCW/CW
L
L
OFF (Hi-Z)
Mode
Stop
(caused by a release of TSD/ISD)
2. Undervoltage Lockout Circuit (UVLO)
The TB6568KQ incorporates an undervoltage lockout circuit. If the power supply voltage drops under 8 V
(typ.), all the output transistors are turned off (Hi-Z).
The UVLO circuit has a hysteresis of 0.7 V (typ.); thus the TB6568KQ recovers at 8.7 V (typ.).
UVLO operation
8.7 V (typ.)
VM voltage
8.0 V (typ.)
UVLO operation
UVLO internal signal
H
L
OUT1, OUT2
H
L
Normal operation
6
OFF (Hi-Z)
Normal operation
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TB6568KQ
3. Overvoltage Shutdown Circuit (VSD)
The TB6568KQ incorporates an overvoltage shutdown circuit. When the power supply voltage exceeds 53 V
(typ.), all the output transistors are turned off (Hi-Z).
The VSD circuit has a hysteresis of 3 V (typ.); thus the TB6568KQ resumes the normal operation at 50 V
(typ.).
VSD operation
VM voltage
53 V (typ.)
50 V (typ.)
VSD operation
VSD internal signal
H
L
OUT1, OUT2
H
L
Normal operation
OFF (Hi-Z)
Normal operation
Note: The VSD circuit is activated if the absolute maximum voltage rating is violated. Note that the circuit is
provided as an auxiliary only and does not necessarily provide the IC with a perfect protection from any
kind of damages.
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4. Thermal Shutdown Circuit (TSD)
The TB6568KQ incorporates a thermal shutdown circuit. If the junction temperature (Tj) exceeds 170°C
(typ.), all the output transistors are turned off (Hi-Z).
The shutdown is released and the TB6568KQ resumes the normal operation when both the IN1 pin and IN2
pin are driven Low.
TSD = 170°C (typ.)
TSD operation
170°C (typ.)
TSD operation
Chip temperature:
Junction temperature (Tj)
TSD internal signal
H
L
IN1, IN2
OUT1, OUT2
H
More than 1 μs (typ.)
L
H
L
Normal operation
OFF (Hi-Z)
Normal operation
Note: The TSD circuit is activated when the junction temperature (Tj) violates the rating temperature of 150°C.
Note that the circuit is provided as an auxiliary only and does not necessarily provide the IC with a perfect
protection from any kind of damages.
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5. Overcurrent Shutdown Circuits (ISD)
The TB6568KQ incorporates overcurrent shutdown (ISD) circuits monitoring the current that flows through
each of all the four output power transistors.
The threshold current ranges from 3 A to 6 A. If any of the ISDs detects an overcurrent for more than 5.1 μs
(typ.), which is the predefined detection time, all the output transistors are turned off and enter High
impedance state.
The shutdown is released and the TB6568KQ resumes the normal operation when both the IN1 pin and IN2
pin are driven Low.
ISD operation
Threshold
Output current
0
5.1 μs
(typ.)
ISD internal signal
H
L
IN1, IN2
H
More than 1 μs (typ.)
L
OUT1, OUT2
Normal operation
OFF (Hi-Z)
Normal operation
Note: The ISD is activated if the absolute maximum current rating is violated. Note that the circuit is provided as
an auxiliary only and does not necessarily provide the IC with a perfect protection from damages due to
overcurrent caused by power fault, ground fault, load-short and the like.
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6. PWM Control
Switching input through the IN1 and IN2 pins enables the PWM control of the motor driver.
When the motor drive is controlled by the PWM input, the TB6568KQ repeats operating in Normal
Operation mode and Short Brake mode alternately.
For preventing the shoot-through current in the output circuit caused by the upper and lower power
transistors being turned on simultaneously, the dead time is internally generated at the time the upper and
lower power transistors switches between on and off.
This eliminates the need of inserting Off time externally; thus the PWM control with synchronous
rectification is enabled.
Note that inserting Off time externally is not required on operation mode changes between CW and CCW,
and CW (CCW) and Short Brake, again, because of the dead time generated internally.
VM
OUT1
VM
OUT1
M
VM
OUT1
M
GND
M
GND
GND
PWM ON → OFF
t2 = 200 ns (typ.)
PWM ON
t1
PWM OFF
t3
VM
VM
OUT1
OUT1
M
M
GND
GND
PWM OFF → ON
t4 = 500 ns (typ.)
PWM ON
t5
VM
t5
Output voltage
waveform
(OUT1)
t1
t3
GND
t4
t2
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7. Output Circuits
The switching characteristics of the output transistors provided to the OUT1 pin and OUT2 pin are as
follows:
Characteristic
Value
tpLH
650 (typ.)
tpHL
450 (typ.)
tr
90 (typ.)
tf
130 (typ.)
Unit
ns
PWM input
(IN1, IN2)
tpLH
Output voltage
(OUT1, OUT2)
tpHL
90%
90%
50%
50%
10%
10%
tr
tf
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TB6568KQ
Package Dimensions
Weight: 2.2 g (typ.)
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Notes on Contents
1. Block Diagrams
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for
explanatory purposes.
2. Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory
purposes.
3. Timing Charts
Timing charts may be simplified for explanatory purposes.
4. Application Circuits
The application circuits shown in this document are provided for reference purposes only. Thorough
evaluation is required, especially at the mass production design stage.
Toshiba does not grant any license to any industrial property rights by providing these examples of
application circuits.
5. Test Circuits
Components in the test circuits are used only to obtain and confirm the device characteristics. These
components and circuits are not guaranteed to prevent malfunction or failure from occurring in the
application equipment.
IC Usage Considerations
Notes on Handling of ICs
(1)
The absolute maximum ratings of a semiconductor device are a set of ratings that must not be
exceeded, even for a moment. Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
(2)
Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case
of over current and/or IC failure. The IC will fully break down when used under conditions that exceed
its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise
occurs from the wiring or load, causing a large current to continuously flow and the breakdown can
lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown,
appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required.
(3)
If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the
design to prevent device malfunction or breakdown caused by the current resulting from the inrush
current at power ON or the negative current resulting from the back electromotive force at power OFF.
IC breakdown may cause injury, smoke or ignition.
Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable,
the protection function may not operate, causing IC breakdown. IC breakdown may cause injury,
smoke or ignition.
(4)
Do not insert devices in the wrong orientation or incorrectly.
Make sure that the positive and negative terminals of power supplies are connected properly.
Otherwise, the current or power consumption may exceed the absolute maximum rating, and
exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
In addition, do not use any device that is applied the current with inserting in the wrong orientation or
incorrectly even just one time.
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Points to Remember on Handling of ICs
(1)
Over Current Protection Circuit
Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs
under all circumstances. If the Over current protection circuits operate against the over current, clear
the over current status immediately.
Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings
can cause the over current protection circuit to not operate properly or IC breakdown before operation.
In addition, depending on the method of use and usage conditions, if over current continues to flow for
a long time after operation, the IC may generate heat resulting in breakdown.
(2)
Thermal Shutdown Circuit
Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal
shutdown circuits operate against the over temperature, clear the heat generation status immediately.
Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings
can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation.
(3)
Heat Radiation Design
In using an IC with large current flow such as power amp, regulator or driver, please design the device
so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time
and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation
design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition,
please design the device taking into considerate the effect of IC heat radiation with peripheral
components.
(4)
Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow
back to the motor’s power supply due to the effect of back-EMF. If the current sink capability
of the power supply is small, the device’s motor power supply and output pins might be
exposed to conditions beyond maximum ratings. To avoid this problem, take the effect of
back-EMF into consideration in system design.
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RESTRICTIONS ON PRODUCT USE
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also
refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the
specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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