TB6568KQ TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6568KQ Full-Bridge DC Motor Driver IC The TB6568KQ is a full-bridge DC motor driver IC employing the MOS process for output power transistors. The low ON-resistance MOS process and PWM control enables driving DC motors with high thermal efficiency. Four operating modes are selectable via IN1 and IN2: clockwise (CW), counterclockwise (CCW), Short Brake and Stop. Features • Power supply voltage: 50 V (max) • Output current: 3 A (max) • Output ON-resistance: 0.55 Ω (typ.) • PWM control • CW/CCW/Short Brake/Stop modes • Overcurrent shutdown circuit (ISD) • Overvoltage shutdown circuit (VSD) • Thermal shutdown circuit (TSD) • Undervoltage lockout circuit (UVLO) • Dead time for preventing shoot-through current Weight: 2.2 g (typ.) Note: The following conditions apply to solderability: About solderability, following conditions were confirmed (1) Use of Sn-37Pb solder Bath • solder bath temperature: 230°C • dipping time: 5 seconds • the number of times: once • use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath • solder bath temperature: 245°C • dipping time: 5 seconds • the number of times: once • use of R-type flux 1 2009-08-11 TB6568KQ Block Diagram (application circuit example) The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass production design stage. Toshiba does not grant any license to any industrial property rights by providing these examples of application circuits. VM 5-V regulator UVLO VSD TSD ISD detection ISD detection OUT1 IN1 Control Predriver Motor IN2 OUT2 ISD detection ISD detection ISD GND Pin Functions Pin No. Pin Name Functional Description 1 IN1 Control signal input pin 1 2 IN2 Control signal input pin 2 3 OUT1 Output pin 1 4 GND Ground pin 5 OUT2 Output pin 2 6 N.C. No-connect 7 VM Power supply voltage pin 2 2009-08-11 TB6568KQ Absolute Maximum Ratings (Note) (Ta = 25°C) Characteristics Symbol Rating Unit Power supply voltage VM 50 V Output voltage VO 50 V Output current IO (peak) 3 A Input voltage VIN −0.3 to 5.5 V Power dissipation PD 1.25 (Note 1) W Operating temperature Topr −40 to 85 °C Storage temperature Tstg −55 to 150 °C Note: The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating (s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. Please use the TB6568KQ within the specified operating ranges. Note 1: No heatsink Operating Ranges Characteristics Symbol Rating Unit Power supply voltage VMopr 10 to 45 V PWM Frequency fPWM Up to 100 kHz IO (Ave.) Up to 1.5 (Note 2) (given as a guide) A Output Current Note 2: Ta = 25°C, the TB6568KQ is mounted on the PCB (70 × 50 × 1.6 (mm), double-sided, Cu thickness: 50 μm, Cu dimension: 67%) with no heatsink. *: The average output current shall be increased or decreased depending on usage conditions such as ambient temperature, a presence/absence of a heatsink and IC mounting method. Please use the average output current so that the junction temperature of 150°C (Tj) and the absolute maximum output current rating of 3 A are not exceeded. **: Connecting the metal plate on the rear surface of the TB6568KQ to a heatsink allows for improvement of the power dissipation capability of the TB6568KQ. Please consider heat dissipation efficiency when designing the board layout. Moreover, this metal plate is electrically connected to the rear surface of the TB6568KQ; therefore, it must always be insulated or shorted to ground. 3 2009-08-11 TB6568KQ Electrical Characteristics (unless otherwise specified, Ta = 25°C, VM = 24 V) Characteristics Power supply current Input voltage Control circuit IN1 pin, Hysteresis voltage IN2 pin Input current PWM frequency Symbol Test Condition Min Typ. Max ICC1 Stop mode ⎯ 2.5 8 ICC2 CW/CCW mode ⎯ 2.5 8 ICC3 Short Brake mode ⎯ 2.5 8 VINH 2 ⎯ 5.5 VINL 0 ⎯ 0.8 Unit mA V ⎯ 0.4 ⎯ IINH VIN = 5 V ⎯ 50 75 IINL VIN = 0 V ⎯ ⎯ 5 Duty: 50 % ⎯ 100 ⎯ kHz VIN (HYS) fPWM μA PWM minimum pulse width fPWM (TW) (value given as a guide) 1 ⎯ ⎯ μs Output ON-resistance RON (U + L) IO = 3 A ⎯ 0.55 0.9 Ω IL (U) VM = 50 V, VOUT = 0 V −2 ⎯ ⎯ IL (L) VM = VOUT = 50 V ⎯ ⎯ 2 VF (U) IO = 3 A ⎯ 1.3 1.7 VF (L) IO = −3 A ⎯ 1.3 1.7 Output leakage current Diode forward voltage 4 μA V 2009-08-11 TB6568KQ Thermal Performance Characteristics Thermal Resistance PD – Ta Power Dissipation PD (W) 14 (1) With a heatsink (10°C/W): Ta = 25°C, PD = 7.8 W 12 (2) No heatsink: Ta = 25°C, PD = 1.25 W 10 8 *: With an infinite heatsink: Rth (j-c) = 6°C/W (1) 6 4 2 Pulse width (2) 0 0 25 50 75 Ambient temperature 100 Ta 125 t (s) 150 (°C) I/O Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. Pin No. IN2 (2) I/O Internal Circuit Digital input 10 kΩ (typ.) IN1 (IN2) L: 0.8 V (max) 100 kΩ (typ.) IN1 (1) I/O Signal H: 2 V (min) VM 5-V regulator OUT1 (3) OUT1 (OUT2) OUT2 (5) Operating supply voltage range GND (4) VM = 10 to 45 V VM (7) GND 5 2009-08-11 TB6568KQ Functional Description The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. Timing charts may be simplified for explanatory purposes. 1. I/O Function Table Input Output IN1 IN2 OUT1 OUT2 H H L L Short Brake L H L H CW/CCW H L H L CCW/CW L L OFF (Hi-Z) Mode Stop (caused by a release of TSD/ISD) 2. Undervoltage Lockout Circuit (UVLO) The TB6568KQ incorporates an undervoltage lockout circuit. If the power supply voltage drops under 8 V (typ.), all the output transistors are turned off (Hi-Z). The UVLO circuit has a hysteresis of 0.7 V (typ.); thus the TB6568KQ recovers at 8.7 V (typ.). UVLO operation 8.7 V (typ.) VM voltage 8.0 V (typ.) UVLO operation UVLO internal signal H L OUT1, OUT2 H L Normal operation 6 OFF (Hi-Z) Normal operation 2009-08-11 TB6568KQ 3. Overvoltage Shutdown Circuit (VSD) The TB6568KQ incorporates an overvoltage shutdown circuit. When the power supply voltage exceeds 53 V (typ.), all the output transistors are turned off (Hi-Z). The VSD circuit has a hysteresis of 3 V (typ.); thus the TB6568KQ resumes the normal operation at 50 V (typ.). VSD operation VM voltage 53 V (typ.) 50 V (typ.) VSD operation VSD internal signal H L OUT1, OUT2 H L Normal operation OFF (Hi-Z) Normal operation Note: The VSD circuit is activated if the absolute maximum voltage rating is violated. Note that the circuit is provided as an auxiliary only and does not necessarily provide the IC with a perfect protection from any kind of damages. 7 2009-08-11 TB6568KQ 4. Thermal Shutdown Circuit (TSD) The TB6568KQ incorporates a thermal shutdown circuit. If the junction temperature (Tj) exceeds 170°C (typ.), all the output transistors are turned off (Hi-Z). The shutdown is released and the TB6568KQ resumes the normal operation when both the IN1 pin and IN2 pin are driven Low. TSD = 170°C (typ.) TSD operation 170°C (typ.) TSD operation Chip temperature: Junction temperature (Tj) TSD internal signal H L IN1, IN2 OUT1, OUT2 H More than 1 μs (typ.) L H L Normal operation OFF (Hi-Z) Normal operation Note: The TSD circuit is activated when the junction temperature (Tj) violates the rating temperature of 150°C. Note that the circuit is provided as an auxiliary only and does not necessarily provide the IC with a perfect protection from any kind of damages. 8 2009-08-11 TB6568KQ 5. Overcurrent Shutdown Circuits (ISD) The TB6568KQ incorporates overcurrent shutdown (ISD) circuits monitoring the current that flows through each of all the four output power transistors. The threshold current ranges from 3 A to 6 A. If any of the ISDs detects an overcurrent for more than 5.1 μs (typ.), which is the predefined detection time, all the output transistors are turned off and enter High impedance state. The shutdown is released and the TB6568KQ resumes the normal operation when both the IN1 pin and IN2 pin are driven Low. ISD operation Threshold Output current 0 5.1 μs (typ.) ISD internal signal H L IN1, IN2 H More than 1 μs (typ.) L OUT1, OUT2 Normal operation OFF (Hi-Z) Normal operation Note: The ISD is activated if the absolute maximum current rating is violated. Note that the circuit is provided as an auxiliary only and does not necessarily provide the IC with a perfect protection from damages due to overcurrent caused by power fault, ground fault, load-short and the like. 9 2009-08-11 TB6568KQ 6. PWM Control Switching input through the IN1 and IN2 pins enables the PWM control of the motor driver. When the motor drive is controlled by the PWM input, the TB6568KQ repeats operating in Normal Operation mode and Short Brake mode alternately. For preventing the shoot-through current in the output circuit caused by the upper and lower power transistors being turned on simultaneously, the dead time is internally generated at the time the upper and lower power transistors switches between on and off. This eliminates the need of inserting Off time externally; thus the PWM control with synchronous rectification is enabled. Note that inserting Off time externally is not required on operation mode changes between CW and CCW, and CW (CCW) and Short Brake, again, because of the dead time generated internally. VM OUT1 VM OUT1 M VM OUT1 M GND M GND GND PWM ON → OFF t2 = 200 ns (typ.) PWM ON t1 PWM OFF t3 VM VM OUT1 OUT1 M M GND GND PWM OFF → ON t4 = 500 ns (typ.) PWM ON t5 VM t5 Output voltage waveform (OUT1) t1 t3 GND t4 t2 10 2009-08-11 TB6568KQ 7. Output Circuits The switching characteristics of the output transistors provided to the OUT1 pin and OUT2 pin are as follows: Characteristic Value tpLH 650 (typ.) tpHL 450 (typ.) tr 90 (typ.) tf 130 (typ.) Unit ns PWM input (IN1, IN2) tpLH Output voltage (OUT1, OUT2) tpHL 90% 90% 50% 50% 10% 10% tr tf 11 2009-08-11 TB6568KQ Package Dimensions Weight: 2.2 g (typ.) 12 2009-08-11 TB6568KQ Notes on Contents 1. Block Diagrams Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. 2. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 3. Timing Charts Timing charts may be simplified for explanatory purposes. 4. Application Circuits The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass production design stage. Toshiba does not grant any license to any industrial property rights by providing these examples of application circuits. 5. Test Circuits Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment. IC Usage Considerations Notes on Handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. (2) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (3) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (4) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time. 13 2009-08-11 TB6568KQ Points to Remember on Handling of ICs (1) Over Current Protection Circuit Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the Over current protection circuits operate against the over current, clear the over current status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In addition, depending on the method of use and usage conditions, if over current continues to flow for a long time after operation, the IC may generate heat resulting in breakdown. (2) Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation. (3) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. (4) Back-EMF When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. 14 2009-08-11 TB6568KQ RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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