TLN212(F) TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera Unit: mm Light Source For Auto Focus • Optical radiation of current confining LED chip is condensed by a resin lens. • High output • Effective emission diameter of 388 × 296µm • Optical output efficiently radiated in solid angle of 1.136sr • Can be operated at VCC = 3V (which is equal to is two cells) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current (Note 1) IF 50 mA Pulse forward current (Note 2) IFP 800 mA Reverse voltage VR 1 V Operating temperature Topr −25~60 °C Storage temperature Tstg −40~90 °C TOSHIBA ― Weight: 0.18g(typ.) (Note 1): Permissible value for acceptance inspection / characteristic test and is guaranteed for actual application (Note 2): Within 4 hours at 1 cycle with frequency 10kHz, duty 50%, power applied for 0.1s paused for 0.4s IFP = 0.8A 0.22ms 1 16 2 1 1.56ms 28.48ms 400ms 428.48ms 1 2004-01-06 TLN212(F) Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 50mA ― 1.35 ― V Pulse forward voltage VFP IFP = 300mA, t = 10ms ― 1.67 1.85 V µA Reverse current IR VR = 1V ― ― 100 Effective emission spot diameter X Half value of peak (Note 1) ― 388 ― Y Half value of peak (Note 1) ― 296 ― φe IFP = 300mA, t = 10ms 8 12 ― mW Radiation flux (Note) (Note 2) µm 1 θ2 IF = 50mA ― ±35 ― ° Peak emission wavelength λP IF = 50mA 850 870 900 nm Spectral line half width ∆λ IF = 50mA ― 40 ― nm Half value angle (Note1): The direction of X, Y are in the following diagram. The shaded area represents the emitting surface. Y LED chip X (Note 2): Luminous radiation output effective angle = ±25 degree Precaution Please be careful of the followings. 1. Soldering temperature: 260°C max Soldering time: 5s max (Soldering must be performed 2mm from the bottom of the package.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. The TLN212(F) for a still camera AF use only. Please do not use this device except for a still camera. 2 2004-01-06 TLN212(F) φe – IFP IF – Ta (typ.) 40 IF (mW) (mA) 60 30 Ta = −20°C Radiant flux φe Allowable forward current 40 20 0 0 20 40 Ambient temperature Ta 10 400 200 (mA) IFP – VFP (typ.) 800 600 Pulse forward current IFP (°C) Wavelength Characteriistic 1.0 25° 60° 0 0 80 60 20 (typ.) 800 IF = 50mA (mA) Ta = 25°C 600 Relative intensity IFP 0.8 Pulse forward current 0.6 0.4 0.2 0 820 840 880 860 Wave length 900 λ 920 Ta = 60° −20° 200 0 0 940 (nm) 25° 400 1 Pulse forward voltage Radiation Pattern 2 VFP 3 (V) (typ.) Ta = 25°C 20° 10° 0° 10° 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 80° 90° 0 0.2 0.4 0.6 0.8 90° 1.0 Relative intensity 3 2004-01-06 TLN212(F) RESTRICTIONS ON PRODUCT USE 030619EAC • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. 4 2004-01-06