KSB772 KSB772 Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Value Units Collector-Base Voltage Parameter - 40 V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -3 A ICP *Collector Current (Pulse) -7 A IB Base Current (DC) - 0.6 A PC Collector Dissipation (TC=25°C) 10 W Collector Dissipation (Ta=25°C) 1 W Rθja Junction to Ambient 132 °C/W Rθjc Junction to Case 13.5 °C/W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = - 30V, IE = 0 Min. Typ. Max. -1 Units µA 30 60 220 160 -1 µA 400 IEBO Emitter Cut-off Current VEB = - 3V, IC = 0 hFE1 hFE2 * DC Current Gain VCE = - 2V, IC = - 20mA VCE = - 2V, IC = - 1A VCE(sat) * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.3 - 0.5 VBE(sat) * Base-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 1.0 - 2.0 fT Current Gain Bandwidth Product VCE = - 5V, IE = - 0.1A 80 MHz Cob Output Capacitance VCB = - 10V, IE = 0 f = 1MHz 55 pF V V * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classificntion Classification R O Y G hFE2 60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. B, October 2002 KSB772 Typical Characteristics 1000 VCE = -2V IB = -10mA IB = -9mA -1.6 IB = -8mA IB = -7mA -1.2 IB = -6mA IB = -5mA IB = -4mA -0.8 IB = -3mA IB = -2mA -0.4 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -2.0 100 10 IB = -1mA 0 -4 -8 -12 1 -16 -1 -20 -10 -1000 -10000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic VCE(sat),VBE(sat)[mV] SATURATION VOLTAGE -100 Figure 2. DC current Gain -10000 1000 IE = 0 f=1MHz IC = 10· I B Cob[pF], CAPACITANCE -1000 VBE(sat) -100 -10 VCE(sat) -1 -1 -10 -100 -1000 100 10 1 -10000 -1 -10 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 1000 -10 VCE =5V 100 10 1 -0.01 -0.1 -1 IC[A], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation IC MAX(DC) -1 10 ms 1m s Dis Lim sipat ited ion s/b Lim ite d -0.1 VCEOMAX IC[A], COLLECTOR CURRENT IC MAX(Pulse) s 0u 10 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT -100 -0.01 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. B, October 2002 KSB772 Typical Characteristics (Continued) 16 140 14 PC[W], POWER DISSIPATION 160 dT[%], Ic DERATING 120 100 s/b 80 Di ss 60 40 ip a tio n Lim Li m ite ited d 20 0 12 10 8 6 4 2 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas ©2002 Fairchild Semiconductor Corporation 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. B, October 2002 KSB772 Package Dimensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, October 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1