KSH112 KSH112 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP112 D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 100 Units V 100 V 5 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 2 A ICP Collector Current (Pulse) 4 A IB Base Current 50 mA PC Collector Dissipation (TC=25°C) 20 W Collector Dissipation (Ta=25°C) 1.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Equivalent Circuit C B R1 R2 R 1 ≅ 10 k Ω R 2 ≅ 0.6 k Ω E Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = 30mA, IB = 0 ICEO Collector Cut-off Current ICBO Collector Cut-off Current IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE * DC Current Gain VCE = 3V, IC = 0.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A VCE(sat) * Collector-Emitter Saturation Voltage Min. 100 Max. Units V VCE = 50V, IB = 0 20 µA VCB = 100V, IB = 0 20 µA 2 mA 500 1000 200 12K 2 3 IC = 2A, IB = 8mA IC = 4A, IB = 40mA V V VBE(sat) * Base-Emitter Saturation Voltage IC = 4A, IB = 40mA 4 V VBE(on) * Base-Emitter On Voltage VCE = 3A, IC = 2A 2.8 V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.75A Cob Output Capacitance VCB = 10V, IE = 0 f = 0.1MHz 25 MHz 100 pF * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH112 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 10000 hFE, DC CURRENT GAIN VCE = 3V 1000 100 10 0.01 0.1 1 10 10 IC = 250 IB V BE(sat) 1 VCE (sat) 0.1 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 tR,tD(µs), TURN ON TIME Cob[pF], CAPACITANCE VCC=30V IC =250IB 100 10 1 tR tD 1 0.1 1 10 0.1 0.01 100 Figure 3. Collector Output Capacitance 1 10 Figure 4. Turn On Time 10 10 tSTG 1 tF s 0µ IC[A], COLLECTOR CURRENT 10 VCC =30V IC =250IB tSTG,tF[µS], TURN OFF TIME 0.1 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE 1 DC 1 5m ms s 0.1 0.01 0.1 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time ©2002 Fairchild Semiconductor Corporation 10 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A4, October 2002 KSH112 Typical Characteristics (Continued) PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH112 Package Dimensions D-PAK 0.50 ±0.10 MIN0.55 0.91 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (2XR0.25) (1.00) (3.05) 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.90) 6.10 ±0.20 2.30 ±0.10 (0.10) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 9.50 ±0.30 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH112 Package Dimensions (Continued) I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 2.30TYP [2.30±0.20] ±0.20 ±0.30 16.10 ±0.20 ±0.30 9.30 0.76 ±0.10 1.80 0.80 MAX0.96 0.50 ±0.10 6.10 ±0.20 (0.50) 0.70 (4.34) ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1