KSD1621 KSD1621 High Current Driver Applications • • • • Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB1121 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 30 Units V VCEO VEBO Collector-Emitter Voltage 25 V Emitter-Base Voltage 6 V IC Collector Current 2 A PC PC* Collector Power Dissipation 500 1.3 mW W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Mounted on Ceramic Board (250mm2x0.8mm) Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 Min. 30 BVCEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0 25 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 ICBO Collector Cut-off Current VCB=20V, IE=0 Typ. Max. Units V V V 100 nA 100 nA IEBO Emitter Cut-off Current VBE=4V, IC=0 hFE1 hFE2 DC Current Gain VCE=2V, IC=0.1A VCE=2V, IC=1.5A VCE (sat) Collector-Emitter Saturation Voltage IC=1.5A, IB=75mA 0.18 0.4 VBE (sat) Base-Emitter Saturation Voltage IC=1.5A, IB=75mA 0.85 1.2 fT Current Gain Bandwidth product VCE=10V, IC=50mA 150 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 19 pF tON * Turn On Time 60 ns tSTG * Storage Time tF * Fall Time VCC=12V, VBE=5V IB1= -IB2=25mA IC=0.5A, RL=25Ω 100 65 560 V V 500 ns 25 ns * Pulse Width=20µs, Duty Cycle≤1% hFE Classification Classification R S T U hFE 100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560 Marking SYX hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSD1621 Typical Characteristics 1000 2.0 IB = 30mA IB = 20mA VCE= 2V 1.6 IB = 10mA IB = 8mA 1.2 IB = 6mA 0.8 IB = 4mA 0.4 IB = 2mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 50mA 100 10 IB = 0 0.0 0.0 0.2 0.4 0.6 0.8 1 0.01 1.0 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC current Gain 10 3.2 IC = 10 IB VCE = 2V 2.8 IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 1 0.1 0.01 0.01 0.1 1 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0.0 10 IC[A], COLLECTOR CURRENT IE =0 f = 1MHz 100 10 1 10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 0.4 0.6 0.8 1.0 1.2 100 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 1 0.1 0.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Cob[pF], CAPACITANCE 1 1000 VCE = 10V 100 10 0.1 1 IC[A], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, November 2002 KSD1621 Typical Characteristics (Continued) 10 1.6 IC MAX. (Pulse) ra ic m 0.8 a Bo rd 5 (2 0m × k m 8m t Sin 0. Hea 2 No 0.4 m PC[W], POWER DISSIPATION Ce IC[A], COLLECTOR CURRENT on o ) Ta=25 C Single Pulse Mounted on Ceramic Board 2 (250mm × 0.8mm) ed 0.1 1.2 nt 1 ou M s 0m 10 s 1m s m 10 IC MAX. (DC) 0.0 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 100 0 50 100 150 200 o Ta[ C], AMBIENT TEMPERATURE Figure 8. Power Derating Rev. A2, November 2002 KSD1621 Package Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1