KSC2883 KSC2883 Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A IB Base Current 0.3 A PC PC* Collector Power Dissipation 500 1,000 mW mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Mounted on Ceramic Board (250mm2x0.8mm) Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC=10µA, IB=0 Min. 30 Typ. Max. Units V BVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 ICBO Collector Cut-off Current VCB=30V, IE=0 100 nA IEBO Emitter Cut-off Current VBE=5V, IC=0 hFE DC Current Gain VCE=2V, IC=500mA 100 nA VCE (sat) Collector-Emitter Saturation Voltage IC=1.5A, IB=30mA 2.0 V VBE (on) Base-Emitter On Voltage VCE=2V, IC=500mA 1.0 V fT Current Gain Bandwidth Product VCE=2V, IC=500mA 120 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 40 pF 5 V 100 320 hFE Classification Classification O Y hFE 100 ~ 200 160 ~ 320 Marking SHX hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2883 Typical Characteristics 1.6 1.6 IB = 8mA IB = 10mA VCE = 2V IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 1.4 IB = 6mA 1.2 IB = 5mA IB = 4mA 0.8 IB = 3mA IB = 2mA 0.4 IB = 1mA 0.0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 14 16 0.0 Figure 1. Static Characteristics 1.2 1.6 Figure 2. Base-Emitter On Voltage 10 10000 IC = 50 IB VCE(sat) [V], SATURATION VOLTAGE VCE = 2V hFE, DC CURRENT GAIN 0.8 VBE[V], SATURATION VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE 1000 100 10 1 0.1 0.01 1 1 10 100 1000 1 10000 10 100 1000 10000 IC [mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage 1.6 10 IC MAX. (Pulse) 100ms PC [W], POWER DISSIPATION 10ms IC MAX. (DC) 1ms 1 1s 0.1 VCEO MAX. IC [A], COLLECTOR CURRENT 0.4 o Ta = 25 C Single Pulse 1.2 M ou nt ed 0.8 0.4 on Ce ra m ic Bo a rd (2 5 0m m 2 x 0. 8m m ) 0.0 0.01 0.1 1 10 100 0 50 100 150 200 o VCE [V], COLLECTOR-EMITTER VOLATGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation TA [ C], AMBIENT TEMPERATURE Figure 6. Power Derating Rev. A2, September 2002 KSC2883 Typical Characteristics (Continued) 1.6 10ms IC MAX. (DC) 100ms 1ms 1 Ce m ra 0.8 ic a Bo rd x k m 8m 0. t Sin 2 Hea m m No 0.4 50 (2 o ) Ta = 25 C Single Pulse Mounted on Ceramic Board 2 (250 mm x 0.8 mm) on 0.1 1.2 ed nt PC [W], POWER DISSIPATION IC MAX. (Pulse) ou M IC [A], COLLECTOR CURRENT 10 0.0 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 100 0 50 100 150 200 o TA [ C], AMBIENT TEMPERATURE Figure 8. Power Derating Rev. A2, September 2002 KSC2883 Package Dimensions SOT-89 1.50 ±0.20 4.50 ±0.20 (0.40) 4.10 (1.10) 2.50 ±0.20 C0.2 ±0.20 (0.50) 1.65 ±0.10 0.50 ±0.10 0.40 ±0.10 0.40 +0.10 –0.05 1.50 TYP 1.50 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1