KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : KSB1116 : KSB1116A Ratings -60 -80 Units V V VCEO Collector-Emitter Voltage : KSB1116 : KSB1116A -50 -60 V V VEBO Emitter-Base Voltage -6 V IC Collector Current (DC) -1 A ICP * Collector Current (Pulse) -2 A PC Collector Power Dissipation 0.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB= -60V, IE=0 IEBO Emitter Cut-off Current VEB= -6V, IC= 0 hFE1 * DC Current Gain VCE= -2V, IC= -100mA : KSB1116 : KSB1116A Min. Typ. Max. -100 Units nA -100 nA VCE= -2V, IC = -1A 135 135 81 VBE (on) * Base-Emitter On Voltage VCE= -2V, IC= -50mA -600 -650 -700 mV VCE (sat) * Collector-Emitter Saturation Voltage IC= -1A, IB= -50mA -0.2 -0.3 V VBE (sat) * Base-Emitter Saturation Voltage IC= -1A, IB= -50mA -0.9 -1.2 Cob Output Capacitance VCB= -10V, IE=0, f=1MHz fT Current Gain Bandwidth Product VCE= -2V, IC= -100mA tON Turn On Time tSTG Storage Time tF Fall Time VCC= -10V, IC= -100mA IB1= -IB2= -10mA VBE (off)= 2~3V hFE2 70 600 400 V 25 pF 120 MHz 0.07 µs 0.7 µs 0.07 µs * Pulse Test: PW ≤350µs, Duty Cycle≤2% hFE Classification Classification Y G L hFE1 135 ~ 270 200 ~ 400 300 ~ 600 ©2002 Fairchild Semiconductor Corporation Rev. A2, January 2002 -1.0 IB = -250µ A IB = -3.5mA -80 IB = -150µ A -60 IB = -100µ A -40 IB = -50µ A -20 0 0 -2 -4 -6 -8 -0.8 IB = -2.5mA IB = -1.5mA IB = -1.0mA -0.4 -0.8 -1.0 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 -10 -10 IC = 20 IB VBE(sat) -1 -0.1 V CE(sat) -0.01 -0.01 IC[mA], COLLECTOR CURRENT -0.1 -1 -10 IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 VCC = -10V IE =0 f = 1MHz Cob[pF], CAPACITANCE IC = 10IB1 = -10IB2 tON, tSTG, tF [µ s], TIME -0.6 Figure 2. Static Characteristic VCE = -2V hFE, DC CURRENT GAIN -0.2 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 -1 IB = -0.5mA -0.2 Figure 1. Static Characteristic -0.1 IB = -2.0mA -0.4 0.0 0.0 -10 IB = -3.0mA -0.6 VCE[V], COLLECTOR-EMITTER VOLTAGE 1 -0.01 IB = -4.0mA IB = -4.5mA IB = -5.0mA IB = -200µ A IC[A], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -100 1 tSTG 0.1 tF 100 10 tON 0.01 -0.001 -0.01 -0.1 IC[A], COLLECTOR CURRENT Figure 5. Switching Time ©2002 Fairchild Semiconductor Corporation -1 1 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 6. Collector Output Capacitance Rev. A2, January 2002 KSB1116/1116A Typical Characteristics KSB1116/1116A 1000 -10 VCE = -2V 10 1 -0.01 -0.1 -1 -10 IC[mA], COLLECTOR CURRENT -1 10 ms PW =1 m s 200ms DC -0.1 -0.01 -1 -10 KSB1116A 100 KSB1116 IC[A], COLLECTOR CURRENT fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Typical Characteristics (Continued) -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area 0.8 PC[W], POWER DISSIPATION 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 175 o Ta[ C], AMBIENT TEMPERATURE Figure 9. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A2, January 2002 KSB1116/1116A Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, January 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H4