KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Ratings -40 Units V V VCEO Collector-Emitter Voltage -20 VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -500 mA ICP * Collector Current (Pulse) -700 mA PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * PW≤350ms, Duty cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -40 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -20 BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -5 V ICBO Collector Cut-off Current VCB= -25V, IE=0 IEBO Emitter Cut-off Current VEB= -3V, IC=0 hFE * DC Current Gain VCE= -1V, IC= -100mA VCE(sat) * Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.3 -0.4 V VBE (sat) * Base-Emitter Saturation Voltage IC= -500mA, IB= -50mA -1.0 -1.3 V V 40 -100 nA -100 nA 400 * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification R O Y G hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1150 Typical Characteristics 1000 -500 VCE =-1V IB = -1.6mA -400 IB = -1.4mA -350 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -450 IB = -1.2mA IB = -1.0mA -300 IB = -0.8mA -250 IB = -0.6mA -200 -150 IB = -0.4mA -100 100 IB = -0.2mA -50 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 10 -20 -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE -1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -10 -1000 IC=10IB -1 IC[mA], COLLECTOR CURRENT VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE -100 VBE(sat) -0.1 VCE(sat) -0.01 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VCE =-1V -100 -10 -1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE (sat)[V], BASE-EMITTER VOLTAGE Figure 4. Base-Emitter On Voltage 100 Cob[pF], CAPACITANCE f=1MHz IE=0 10 1 -1 -10 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1150 Package Dimensions TO-92S 4.00 ±0.20 (1.10) 3.70 ±0.20 2.31 ±0.20 14.47 ±0.30 0.66 MAX. 0.49 ±0.10 1.27TYP [1.27±0.20] 1.27TYP [1.27±0.20] +0.10 0.35 –0.05 2.86 ±0.20 0.77 ±0.10 3.72 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1