2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.) • Small flat package • PC = 1~2 W (Mounted on a ceramic substrate) • Complementary to 2SA1681 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Base current IB 0.2 A Collector power dissipation PC 500 mW JEDEC 1000 mW JEITA SC-62 Tj 150 °C TOSHIBA 2-5K1A Tstg −55~150 °C Weight: 0.05 g (typ.) Collector power dissipation Junction temperature Storage temperature range PC (Note) ― 2 Note: 2SC4409 mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SC4409 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 ⎯ ⎯ 0.1 µA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ⎯ ⎯ 0.1 µA V (BR) CEO V IC = 10 mA, IB = 0 50 ⎯ ⎯ hFE (1) VCE = 2 V, IC = 100 mA 120 ⎯ 400 hFE (2) VCE = 2 V, IC = 1.5 A 40 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A ⎯ ⎯ 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.05 A ⎯ ⎯ 1.2 V VCE = 2 V, IC = 100 mA ⎯ 100 ⎯ MHz VCB = 10 V, IE = 0, f = 1 MHz ⎯ 14 ⎯ pF ⎯ 0.1 ⎯ ⎯ 0.5 ⎯ ⎯ 0.1 ⎯ DC current gain Transition frequency fT Collector output capacitance Cob Turn-on time ton 20 µs Input Switching time Storage time tstg IB1 IB2 IB2 Fall time tf IB1 IB1 = −IB2 = 0.05 A, Duty cycle < = 1% Output 30 Ω Collector-emitter breakdown voltage 30 V µs Marking Part No. (or abbreviation code) K Lot No. A A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC4409 IC – VCE hFE – IC 2.4 500 2.0 100 DC current gain hFE Collector current IC (A) Common emitter Ta = 25°C 30 20 50 15 1.6 10 1.2 300 100 −25 50 30 10 1 3 10 6 0.8 30 100 300 Collector current IC 1000 3000 (mA) 4 0.4 IB = 2 mA 0 0 0 1 2 3 4 Collector-emitter voltage 5 VCE (V) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) VCE (sat) – IC 3 Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = 2 V 25 Ta = 100°C Common emitter 1 IC/IB = 20 0.5 0.3 0.1 Ta = 100°C 0.05 0.03 25 3 0.5 0.2 1 3 30 10 100 300 Collector current IC 1000 Common emitter IC/IB = 20 25 100 3 30 10 100 Collector current −25 0.01 1 Ta = −25°C 1 300 1000 IC 3000 (mA) 3000 (mA) Safe operating area 10 5 IC max (pulsed)* 3 IC max (continuous) 1 ms* 10 ms* 100 ms* 1 (A) IC – VBE 2.0 Collector current IC Common emitter Collector current IC (A) VCE = 2 V 1.6 1.2 Ta = 100°C 0.8 25 −25 0.5 0.3 DC Operation (Ta = 25°C) 0.1 0.05 0.03 0.01 0.005 0.4 0.003 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly VCEO max with increase in temperature. 0 0 0.2 0.4 0.6 Base-emitter voltage 0.8 VBE 1.0 0.001 0.1 1.2 (V) 0.3 1 3 Collector-emitter voltage 3 10 100 30 VCE (V) 2004-07-07 2SC4409 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07