TOSHIBA 2SC4409_04

2SC4409
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications
Power switching applications
Unit: mm
•
Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A)
•
High speed switching time: tstg = 500ns (typ.)
•
Small flat package
•
PC = 1~2 W (Mounted on a ceramic substrate)
•
Complementary to 2SA1681
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Base current
IB
0.2
A
Collector power dissipation
PC
500
mW
JEDEC
1000
mW
JEITA
SC-62
Tj
150
°C
TOSHIBA
2-5K1A
Tstg
−55~150
°C
Weight: 0.05 g (typ.)
Collector power dissipation
Junction temperature
Storage temperature range
PC (Note)
―
2
Note: 2SC4409 mounted on a ceramic substrate (250 mm × 0.8 t)
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2SC4409
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
⎯
⎯
0.1
µA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
⎯
⎯
0.1
µA
V (BR) CEO
V
IC = 10 mA, IB = 0
50
⎯
⎯
hFE (1)
VCE = 2 V, IC = 100 mA
120
⎯
400
hFE (2)
VCE = 2 V, IC = 1.5 A
40
⎯
⎯
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 0.05 A
⎯
⎯
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 0.05 A
⎯
⎯
1.2
V
VCE = 2 V, IC = 100 mA
⎯
100
⎯
MHz
VCB = 10 V, IE = 0, f = 1 MHz
⎯
14
⎯
pF
⎯
0.1
⎯
⎯
0.5
⎯
⎯
0.1
⎯
DC current gain
Transition frequency
fT
Collector output capacitance
Cob
Turn-on time
ton
20 µs Input
Switching time
Storage time
tstg
IB1
IB2
IB2
Fall time
tf
IB1
IB1 = −IB2 = 0.05 A,
Duty cycle <
= 1%
Output
30 Ω
Collector-emitter breakdown voltage
30 V
µs
Marking
Part No. (or abbreviation code)
K
Lot No.
A
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SC4409
IC – VCE
hFE – IC
2.4
500
2.0 100
DC current gain
hFE
Collector current IC
(A)
Common emitter
Ta = 25°C
30
20
50
15
1.6
10
1.2
300
100
−25
50
30
10
1
3
10
6
0.8
30
100
300
Collector current IC
1000
3000
(mA)
4
0.4
IB = 2 mA
0
0
0
1
2
3
4
Collector-emitter voltage
5
VCE (V)
VBE (sat) – IC
Base-emitter saturation
voltage VBE (sat) (V)
VCE (sat) – IC
3
Collector-emitter saturation
voltage VCE (sat) (V)
Common emitter
VCE = 2 V
25
Ta = 100°C
Common emitter
1
IC/IB = 20
0.5
0.3
0.1
Ta = 100°C
0.05
0.03
25
3
0.5
0.2
1
3
30
10
100
300
Collector current IC
1000
Common emitter
IC/IB = 20
25
100
3
30
10
100
Collector current
−25
0.01
1
Ta = −25°C
1
300
1000
IC
3000
(mA)
3000
(mA)
Safe operating area
10
5
IC max (pulsed)*
3
IC max (continuous)
1 ms*
10 ms*
100 ms*
1
(A)
IC – VBE
2.0
Collector current IC
Common emitter
Collector current IC
(A)
VCE = 2 V
1.6
1.2
Ta = 100°C
0.8
25
−25
0.5
0.3
DC Operation
(Ta = 25°C)
0.1
0.05
0.03
0.01
0.005
0.4
0.003
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
VCEO max
with increase in temperature.
0
0
0.2
0.4
0.6
Base-emitter voltage
0.8
VBE
1.0
0.001
0.1
1.2
(V)
0.3
1
3
Collector-emitter voltage
3
10
100
30
VCE (V)
2004-07-07
2SC4409
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2004-07-07