2SC3620 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC3620 Color TV Horizontal Driver Applications Color TV Chroma Output Applications Unit: mm • High breakdown voltage: VCEO = 300 V • Recommended for chroma output and driver applications for line-operated TV horizontal. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 7 V Collector current IC 100 mA Base current IB 50 mA PC 1.5 W Tj 150 Tstg −55 to 150 Collector power dissipation (Ta = 25°C) Junction temperature Storage temperature range JEDEC ― °C JEITA ― °C TOSHIBA Weight: 0.82 g (typ.) Electrical Characteristics (Tc = 25°C) Characteristics Symbol Collector cut-off current Emitter cut-off current 2-8H1A Test Condition ICBO VCB = 240 V, IE = 0 IEBO Min Typ. Max Unit ― ― 1.0 µA µA VEB = 7 V, IC = 0 ― ― 1.0 hFE (1) VCE = 10 V, IC = 50 mA 40 ― 170 hFE (2) VCE = 10 V, IC = 100 mA 20 ― ― Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 20 mA ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 100 mA, IB = 20 mA ― ― 1.2 V fT VCE = 10 V, IC = 30 mA 50 ― ― MHz VCB = 50 V, IE = 0, f = 1 MHz ― ― 5.0 pF DC current gain Transition frequency Collector output capacitance Cob Marking Lot No. C3620 Part No. (or abbreviation code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-26 2SC3620 IC – VCE hFE – IC 500 0.8 80 Common emitter Tc = 25°C 300 0.9 DC current gain (mA) Collector current IC 1.0 Tc = 25°C hFE Common emitter 100 0.7 0.6 60 0.5 0.4 VCE = 10 V 100 5 50 2 30 40 0.3 10 0.3 0.2 20 1 IB = 0.1 mA 0 0 4 8 12 16 Collector-emitter voltage 20 24 VCE Common emitter VCE = 10 V hFE DC current gain Tc = 100°C 100 25 30 1 3 Collector current th 10 30 100 Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) – IC 300 10 0.3 3 Common emitter Tc = 25°C 1 0.5 0.3 IC/IB = 20 10 0.1 0.05 0.3 5 1 IC (mA) Collector current VCE (sat) – IC 10 30 100 IC (mA) VBE (sat) – IC 5 Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 3 t 3 IC/IB = 10 1 0.5 0.3 Tc = 100°C 25 −25 0.1 0.05 0.3 100 IC (mA) (V) hFE – IC −25 30 10 28 500 50 3 Collector current 1 3 Collector current 10 30 IC/IB = 10 Tc = 25°C 1 0.5 0.3 0.1 0.3 100 IC (mA) Common emitter 3 1 3 Collector current 2 10 30 100 IC (mA) 2004-07-26 2SC3620 IC – VBE fT – IC (MHz) 100 Common emitter Common emitter 300 Tc = 25°C fT 80 Transition frequency Collector current IC (mA) VCE = 10 V 500 60 Tc = 100°C 40 25 −25 20 VCE = 20 V 100 10 50 5 30 10 −0.3 −1 −3 0 0 0.2 0.4 0.8 0.6 Base-emitter voltage VBE (V) Cob – VCB Safe Operating Area 500 IE = 0 30 300 IC max (pulsed)* 1 ms* f = 1 MHz Tc = 25°C IC (mA) 5 10 30 Collector-base voltage 100 Collector current 3 3 10 ms* 100 ms* IC max (continuous) 10 1 1 −100 IC (mA) 1.0 50 Collector output capacitance Cob (pF) −30 −10 Collector current 300 VCB (V) 100 500 ms* 50 DC operation Ta = 25°C 30 10 5 *: Single nonrepetitive pulse Tc = 25°C 3 VCEO (max) Curves must be derated linearly with increase in temperature. 1 2 3 10 30 Collector-emitter voltage 3 300 100 VCE (V) 2004-07-26 2SC3620 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-26