TOSHIBA 2SC3620_04

2SC3620
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3620
Color TV Horizontal Driver Applications
Color TV Chroma Output Applications
Unit: mm
•
High breakdown voltage: VCEO = 300 V
•
Recommended for chroma output and driver applications for
line-operated TV horizontal.
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
100
mA
Base current
IB
50
mA
PC
1.5
W
Tj
150
Tstg
−55 to 150
Collector power dissipation
(Ta = 25°C)
Junction temperature
Storage temperature range
JEDEC
―
°C
JEITA
―
°C
TOSHIBA
Weight: 0.82 g (typ.)
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Collector cut-off current
Emitter cut-off current
2-8H1A
Test Condition
ICBO
VCB = 240 V, IE = 0
IEBO
Min
Typ.
Max
Unit
―
―
1.0
µA
µA
VEB = 7 V, IC = 0
―
―
1.0
hFE (1)
VCE = 10 V, IC = 50 mA
40
―
170
hFE (2)
VCE = 10 V, IC = 100 mA
20
―
―
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 20 mA
―
―
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 100 mA, IB = 20 mA
―
―
1.2
V
fT
VCE = 10 V, IC = 30 mA
50
―
―
MHz
VCB = 50 V, IE = 0, f = 1 MHz
―
―
5.0
pF
DC current gain
Transition frequency
Collector output capacitance
Cob
Marking
Lot No.
C3620
Part No. (or abbreviation code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26
2SC3620
IC – VCE
hFE – IC
500
0.8
80
Common emitter
Tc = 25°C
300
0.9
DC current gain
(mA)
Collector current IC
1.0
Tc = 25°C
hFE
Common emitter
100
0.7
0.6
60
0.5
0.4
VCE = 10 V
100
5
50
2
30
40
0.3
10
0.3
0.2
20
1
IB = 0.1 mA
0
0
4
8
12
16
Collector-emitter voltage
20
24
VCE
Common emitter
VCE = 10 V
hFE
DC current gain
Tc = 100°C
100
25
30
1
3
Collector current
th
10
30
100
Collector-emitter saturation voltage
VCE (sat) (V)
VCE (sat) – IC
300
10
0.3
3
Common emitter
Tc = 25°C
1
0.5
0.3
IC/IB = 20
10
0.1
0.05
0.3
5
1
IC (mA)
Collector current
VCE (sat) – IC
10
30
100
IC (mA)
VBE (sat) – IC
5
Common emitter
Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter saturation voltage
VCE (sat) (V)
3
t
3
IC/IB = 10
1
0.5
0.3
Tc = 100°C
25
−25
0.1
0.05
0.3
100
IC (mA)
(V)
hFE – IC
−25
30
10
28
500
50
3
Collector current
1
3
Collector current
10
30
IC/IB = 10
Tc = 25°C
1
0.5
0.3
0.1
0.3
100
IC (mA)
Common emitter
3
1
3
Collector current
2
10
30
100
IC (mA)
2004-07-26
2SC3620
IC – VBE
fT – IC
(MHz)
100
Common emitter
Common emitter
300
Tc = 25°C
fT
80
Transition frequency
Collector current IC
(mA)
VCE = 10 V
500
60
Tc = 100°C
40
25
−25
20
VCE = 20 V
100
10
50
5
30
10
−0.3
−1
−3
0
0
0.2
0.4
0.8
0.6
Base-emitter voltage
VBE
(V)
Cob – VCB
Safe Operating Area
500
IE = 0
30
300
IC max (pulsed)*
1 ms*
f = 1 MHz
Tc = 25°C
IC (mA)
5
10
30
Collector-base voltage
100
Collector current
3
3
10 ms*
100 ms*
IC max (continuous)
10
1
1
−100
IC (mA)
1.0
50
Collector output capacitance
Cob (pF)
−30
−10
Collector current
300
VCB (V)
100
500 ms*
50
DC operation
Ta = 25°C
30
10
5
*: Single nonrepetitive pulse
Tc = 25°C
3
VCEO
(max)
Curves must be derated linearly with
increase in temperature.
1
2
3
10
30
Collector-emitter voltage
3
300
100
VCE
(V)
2004-07-26
2SC3620
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2004-07-26