2SC3673 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 (min) (IC = 400 mA) • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation PC 1000 mW Tj 150 Tstg −55 to 150 Junction temperature Storage temperature range JEDEC ― °C JEITA ― °C TOSHIBA 2-7D101A Weight: 0.2 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ― ― 10 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1 µA V (BR) CEO IC = 10 mA, IB = 0 40 ― ― V Collector-emitter breakdown voltage hFE VCE = 1 V, IC = 400 mA 500 ― ― Collector-emitter saturation voltage VCE (sat) IC = 300 mA, IB = 1 mA ― 0.3 0.5 V Base-emitter saturation voltage VBE (sat) IC = 300 mA, IB = 1 mA ― ― 1.1 V fT VCE = 2 V, IC = 100 mA ― 220 ― MHz VCB = 10 V, IB = 0, f = 1 MHz ― 20 ― pF ― 1.0 ― ― 3.0 ― ― 1.2 ― Transition frequency Collector output capacitance Turn-on time Cob ton Storage time tstg IB2 Switching time Input IB1 20 µs IB1 IB2 Output 100 Ω DC current gain µs VCC = 30 V Fall time tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% 1 2004-07-26 2SC3673 Marking C3673 Part No. (or abbreviation code) Lot No. (weekly code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC3673 IC – VCE VCE – IC 2.4 1.2 (V) VCE 10 5 1.6 Collector-emitter voltage IC (A) Collector current Common emitter Ta = 25°C 20 2.0 2 1.2 1 0.8 0.5 IB = 0.2 mA 0.4 0 0 0 1 2 3 4 Collector-emitter voltage 5 VCE 6 Common emitter Ta = 25°C 1.0 5 10 0.4 50 0.2 0.4 (V) 0.8 1.2 20 30 Common emitter Ta = 100°C (V) 10 0.8 0.6 50 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 1.0 20 Common emitter Ta = −55°C 0.6 0.4 50 0.2 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VCE (sat) – IC VCE = 1 V 25 −55 300 100 50 0.03 0.1 0.3 1 Collector-emitter saturation voltage VCE (sat) (V) Common emitter Ta = 100°C hFE 10 5 3000 DC current gain 2.8 30 hFE – IC 30 0.01 2.4 Collector current IC (A) 5000 500 5 0.8 0 0 2.8 IB = 1 mA Collector current IC (A) 1000 2.0 VCE – IC VCE 5 1.6 Collector current IC (A) Collector-emitter voltage (V) VCE Collector-emitter voltage IB = 1 mA 30 0.6 VCE – IC 1.0 20 0.8 0 0 7 IB = 1 mA 3 3 IC/IB = 300 1 0.5 0.3 Ta = 100°C 25 −55 0.1 0.05 0.03 0.01 Collector current IC (A) Common emitter 0.03 0.1 0.3 1 3 Collector current IC (A) 3 2004-07-26 2SC3673 VBE (sat) – IC IC – VBE Common emitter IC/IB = 300 1 Common emitter VCE = 1 V Ta = −55°C 0.5 0.3 2.0 IC (A) 3 Collector current Base-emitter saturation voltage VBE (sat) (V) 5 25 100 1.6 1.2 0.8 Ta = 100°C 0.4 0.1 0.01 0.03 0.05 0.1 0.3 0.5 25 −55 1 Collector current IC (A) 0 0 0.2 0.4 0.6 0.8 Base-emitter voltage 10 5 1.2 IC max (pulsed)* 3 IC max (continuous) IC (A) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 VBE 1.2 1.4 (V) Safe Operating Area 1.4 Collector current Collector power dissipation PC (W) PC – Ta 1.0 100 Ambient temperature Ta 120 140 160 1 s* DC operation Ta = 25°C 0.3 0.1 0.05 0.03 *: Single nonrepetitive pulse Ta = 25°C 0.01 Curves must be derated linearly with increase in 0.005 temperature. 0.1 0.3 1 VCEO max 3 Collector-emitter voltage 4 1 ms* 1 0.5 0.003 0.03 (°C) 100 ms* 10 ms* 10 VCE 30 100 (V) 2004-07-26 2SC3673 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26