2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 High Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 µs (max) • High collector breakdown voltage: VCEO = 400 V tf = 0.3 µs (max) (IC = 0.4 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V VEBO 7 V IC 0.8 ICP 1.5 IB 0.5 Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 10 A A W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC5458 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 480 V, IE = 0 ― ― 100 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 100 µA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 600 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 400 ― ― V VCE = 5 V, IC = 1 mA 20 ― ― DC current gain hFE VCE = 5 V, IC = 0.1 A 30 ― 80 Collector emitter saturation voltage VCE (sat) IC = 0.3 A, IB = 0.04 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.3 A, IB = 0.04 A ― ― 1.3 V ― ― 0.5 ― ― 2.0 ― ― 0.3 Turn-on time tr 20 µs OUTPUT IB1 Storage time tstg Fall time tf IB2 600 Ω Switching time IB1 INPUT IB2 µs VCC ≈ 240 V IB1 = 50 mA, IB2 = −100 mA DUTY CYCLE ≤ 1% Marking C5458 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC5458 IC – VCE hFE – IC 1000 300 Common emitter 100 hFE 80 100 60 DC current gain Collector current IC (mA) Tc = 25°C 800 40 600 30 20 400 10 200 30 10 4 2 6 8 Collector-emitter voltage VCE Common emitter VCE = 5 V 1 1 0 0 25 −55 3 IB = 5 mA Tc = 100°C 3 Collector current IC – VBE Collector current IC Collector current IC (mA) (mA) VCE = 5 V 10 3 Tc = 100°C 0.2 0.4 25 0.6 Base-emitter voltage 600 400 200 Tc = 100°C −55 0.8 VBE 1.0 0 0 1.2 0.2 (V) 0.4 0.6 Base-emitter voltage VBE (sat) – IC −55 25 0.8 VBE 1.0 1.2 (V) VBE (sat) – IC 10 10 IC/IB = 10 3 25 −55 Tc = 100°C 0.3 0.1 3 10 30 Collector current 100 300 Common emitter Base-emitter saturation voltage VBE (sat) (V) Common emitter Base-emitter saturation voltage VBE (sat) (V) IC (mA) Common emitter VCE = 5 V 30 0.05 1 1000 IC – VBE 100 1 300 800 Common emitter 1 0 100 (V) 1000 300 30 10 10 IC/IB = 5 3 1 1000 −55 Tc = 100°C 0.3 0.1 0.05 1 IC (mA) 25 3 10 30 Collector current 3 100 300 1000 IC (mA) 2005-02-01 2SC5458 VCE (sat) – IC VCE (sat) – IC 10 3 Common emitter IC/IB = 10 Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) Common emitter 3 1 0.3 Tc = 100°C −55 0.1 0.03 1 25 3 10 30 Collector current 100 300 1 0.3 25 Tc = 100°C 0.1 −55 0.3 0.01 1 1000 IC/IB = 5 3 10 30 Collector current IC (mA) 100 300 1000 IC (mA) Safe Operating Area 3 1 ms* IC max (pulsed)* Collector current IC (A) 100 µs* 1 IC max (continuous) 0.3 10 µs* DC operation Tc = 25°C 10 ms* 0.1 100 ms* *: Single nonrepetitive pulse Tc = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.01 10 1 3 30 Collector-emitter voltage VCEO max 100 VCE 300 1000 (V) 4 2005-02-01 2SC5458 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-01