TLP3051(S), TLP3052(S) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP3051(S),TLP3052(S) Unit in mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVERSOLID STATE RELAY The TOSHIBA TLP3051(S) and TLP3052(S) consists of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. • Peak Off-State Voltage : 600V(Min) • Trigger LED Current : 15mA(Max) (TLP3051(S)) 10mA(Max) (TLP3052(S)) • On-State Current : 100mA(Max) • Isolation Voltage : 5000Vrms(Min) • UL Recognized : UL1577,File No.E67349 • SEMKO Approved : SS EN60065 • BSI Approved : BS EN60065, File No.8385 • Option (D4) type SS EN60950, File No.9841111 JEDEC TOSHIBA Weight: 0.39 g 11-7A9 Pin Configuration (top view) BS EN60950, File No.8386 1 VDE approved: DIN EN60747-5-2 2 Approved No. 40009302 4 3 Maximum operating insulation voltage: 890VPK Highest permissible over voltage: 8000VPK (Note):When a EN60747-5-2 approved type is needed, please designate the "Option (D4)" • 6 1: Anode 2: Csthode 3: N.C. 4:Terminal 1 6:Terminal 2 Construction Mechanical Rating Creepage Distance Clearance Insulation Thickness 7.62 mm pich Standard Type 10.16 mm pich TLPxxxxF Type 7.0 mm (Min) 7.0 mm (Min) 0.5 mm (Min) 8.0 mm (Min) 8.0 mm (Min) 0.5 mm (Min) 1 2007-10-01 TLP3051(S), TLP3052(S) Absolute Maximum Ratings (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT IF 50 mA ∆IF /°C −0.7 mA /°C IFP 1 A Forward Current LED Forward Current Derating (Ta≥53°C) Peak Forward Current (100μs pulse, 100pps) Power Dissipation PD 100 mW ∆PD /°C -1.0 mW/°C Reverse Voltage VR 5 V Junction Temperature Tj 125 °C VDRM 600 V Power Dissipation Derating (Ta≥25°C) Off-State Output Terminal Voltage Ta=25°C On-State RMS Current 100 IT(RMS) DETECTOR mA 50 Ta=70°C On-State Current Derating (Ta≥25°C) ∆IT/°C -1.1 mA /°C Peak On-State Current (100μs pulse, 120pps) ITP 2 A Peak Nonrepetitive Surge Current ITSM 1.2 A PD 300 mW ∆PD /°C -4.0 mW/°C Tj 115 °C Storage Temperature Range Tstg −55~150 °C Operating Temperature Range Topr −40~100 °C Lead Soldering Temperature (10s) Tsol 260 °C PT 330 mW ∆PT/°C -4.4 mW /°C BVS 5000 Vrms (Pw=10ms,DC=10%) Power Dissipation Power Dissipation Derating (Ta≥25°C) Junction Temperature Total Package Power Dissipation Total Package Power Dissipation Derating (Ta≥25°C) Isolation Voltage (AC,1min. , R.H.≤60%) (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 2) Device considered a two terminal device :Pins1, 2 and 3 shorted together and pin 4 and pin 6 shorted together. Recommended Operating Conditions CHARACTERISTIC Supply Voltage SYMBOL MIN. TYP. MAX. UNIT VAC — — 240 Vac 15 20 25 mA * Forward Current IF Peak On-State Current ITP — — 1 A Operating Temperature Topr −25 — 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. *In The case of TLP3052 2 2007-10-01 TLP3051(S), TLP3052(S) Individual Electrical Characteristics (Ta=25°C) LED CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V — — 10 μA V = 0, f=1MHz — 30 — pF Capacitance D E T E C T O R TEST CONDITION CT Peak Off-State Current IDRM VDRM=600V — 10 1000 nA Peak On-State Voltage VTM ITM=100mA — 1.7 3.0 V — 1.0 — mA — 500 — V/μs 0.2 — V/μs MIN. TYP. MAX. UNIT — — 15 — 5 10 0.8 — pF — Ω Holding Current IH Critical Rate of Rise of Off-State Voltage Critical Rate of Rise of Commutating Voltage — dv/dt Vin=240Vrms , Ta=85°C (Fig.1) dv/dt(c) Vin=60Vrms , IT=15mA (Fig.1) — Coupled Electrical Characteristics (Ta=25°C) CHARACTERISTIC SYMBOL TLP3051(S) Trigger LED Current TLP3052(S) Capacitance (Input to Output) Isolation Resistance TEST CONDITION IFT VT=6V CS VS=0 , f=1MHz RS VS=500V(R.H.≤60%) Fig. 1 BVS 5×10 10 10 14 5000 — — AC , 1second,in oil — 10000 — DC , 1minute,in oil — 10000 — AC , 1minute Isolation Voltage — mA Vrms Vdc dv / dt test circuit + VCC Rin 120Ω − 1 2 3 4 ＋5V,VCC Vin 6 RL 0V ～ dv / dt（c） 4kΩ 3 dv / dt 2007-10-01 TLP3051(S), TLP3052(S) 4 2007-10-01 TLP3051(S), TLP3052(S) 5 2007-10-01 TLP3051(S), TLP3052(S) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01