2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) • High collector power dissipation: PC = 1.3 W : hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Symbol Rating Unit VCBO 50 V VCES 40 VCEO 20 VEBO 8 IC 5 ICP 8 Base current IB 0.5 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 °C Tstg −55 to 150 °C Collector-emitter voltage Emitter-base voltage DC Collector current Pulse (Note) Storage temperature range V V A JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) Note: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 100 nA V (BR) CEO IC = 10 mA, IB = 0 20 ― ― V Collector-emitter breakdown voltage hFE (1) VCE = 2 V, IC = 0.5 A 800 ― 3200 hFE (2) VCE = 2 V, IC = 4 A 250 ― ― VCE (sat) IC = 4 A, IB = 40 mA ― ― 0.5 Base-emitter voltage VBE VCE = 2 V, IC = 4 A ― ― 1.2 V Transition frequency fT VCE = 2 V, IC = 0.5 A ― 150 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 45 ― pF DC current gain Collector-emitter saturation voltage Collector output capacitance Cob 1 V 2004-07-26 2SC5030 Marking C5030 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC5030 IC – VCE IC – VBE 10 8 30 Common emitter Ta = 25°C 20 VCE = 2 V IC (A) 8 40 10 6 Collector current Collector current IC (A) Common emitter 50 5 4 2 2 6 4 Ta = 125°C 25 2 −40 IB = 0.5 mA 0 0 1 2 3 Collector-emitter voltage 4 VCE 5 0 0 6 0.2 (V) 0.4 0.6 0.8 Base-emitter voltage hFE – IC 1.0 VBE 1.2 (V) VCE (sat) – IC 10000 5 3000 25 hFE DC current gain Collector-emitter saturation voltage VCE (sat) (V) 3 Common emitter Ta = 125°C −40 1000 300 100 Common emitter VCE = 2 V 30 0.01 0.03 0.1 0.3 1 3 10 IC/IB = 200 1 0.3 25 0.03 −40 0.01 0.01 Collector current IC (A) Ta = 125°C 0.1 0.03 0.1 0.3 1 3 10 Collector current IC (A) VBE (sat) – IC PC – Ta Common emitter 1.6 Ta = −40°C 1 25 125 0.3 0.1 0.03 0.01 0.01 0.03 0.1 (W) 3 1.4 PC IC/IB = 200 1.2 Collector power dissipation Base-emitter saturation voltage VBE (sat) (V) 10 0.3 1 3 1.0 0.8 0.6 0.4 0.2 0 0 10 Collector current IC (A) 25 50 75 100 Ambient temperature 3 125 Ta 150 175 (°C) 2004-07-26 2SC5030 rth – tw 1000 Curves should be applied in thermal limited area. (single nonrepetitive pulse) 100 Transient thermal resistance rth (°C/W) Ta = 25°C 10 1 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 20 10 IC max (pulsed)* Collector current IC (A) 5 1 ms* IC max (continuous) 100 ms* 3 10 ms* 1 DC operation Ta = 25°C 0.5 0.3 *: Single nonrepetitive pulse 0.1 Ta = 25°C Curves must be derated 0.05 linearly with increase in temperature. 0.03 0.1 0.3 0.5 1 VCEO max 3 Collector-emitter voltage 5 10 VCE (V) 30 4 2004-07-26 2SC5030 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26