2SC5173 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5173 High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Unit: mm Color TV Chroma Output Applications • High breakdown voltage: VCEO = 300 V • Small collector output capacitance: Cob = 3.0 pF (typ.) • Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 7 V Collector current IC 100 mA Base current IB 50 mA JEDEC ― Collector power dissipation PC 1.8 W JEITA ― Junction temperature Tj 150 °C TOSHIBA Tstg −55 to 150 °C Weight: 1.5 g (typ.) Storage temperature range 2-10T1A Electrical Characteristics (Ta = 25°C unless otherwise noted.) Characteristics Symbol Collector cut-off current Emitter cut-off current DC current gain Test Condition ICBO VCB = 240 V, IE = 0 IEBO Min Typ. Max Unit ― ― 1.0 µA µA VEB = 7 V, IC = 0 ― ― 1.0 hFE (1) VCE = 10 V, IC = 4 mA 20 ― ― hFE (2) VCE = 10 V, IC = 20 mA 30 ― 200 ― ― 1.0 Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA Base-emitter saturation voltage VBE (sat) IC = 10 mA, IB = 1 mA ― ― 1.0 V VCE = 10 V, IC = 20 mA 50 70 ― MHz VCB = 20 V, IE = 0, f = 1 MHz ― 3.0 ― pF Transition frequency fT Collector output capacitance Cob V Marking C5173 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-26 2SC5173 IC – VCE hFE – IC 120 500 Common emitter Collector current IC 3 hFE (mA) 4 2 DC current gain 6 80 1 60 Common emitter Ta = 25°C 300 Ta = 25°C 100 0.6 40 0.4 20 IB = 0.2 mA VCE = 20 V 100 10 50 30 10 0.3 5 1 3 Collector current 0 0 4 8 12 20 16 Collector-emitter voltage VCE 30 100 (V) hFE – IC VCE (sat) – IC Common emitter VCE = 10 V hFE Ta = 100°C 100 50 −25 25 30 1 3 Collector current 30 10 100 Collector-emitter saturation voltage VCE (sat) (V) 5 300 DC current gain 100 IC (mA) 24 500 10 0.3 30 10 3 Ta = 25°C 1 0.5 0.3 IC/IB = 10 5 0.1 0.05 0.3 IC (mA) Common emitter 2 1 3 Collector current 10 IC (mA) VCE (sat) – IC Common emitter 3 VBE (sat) – IC IC/IB = 5 5 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 5 1 0.5 0.3 Ta = 100°C 0.1 −25 0.05 0.3 1 3 Collector current 25 10 30 IC/IB = 5 Ta = 25°C 1 0.5 0.3 0.1 0.3 100 IC (mA) Common emitter 3 1 3 Collector current 2 10 30 100 IC (mA) 2004-07-26 2SC5173 IC – VBE fT – IC (MHz) 100 Common emitter Common emitter Ta = 25°C 300 fT 80 Transition frequency Collector current IC (mA) VCE = 10 V 500 60 Ta = 100°C 25 −25 40 20 100 VCE = 20 V 50 5 10 0.3 1 3 0.4 0.6 0.8 Base-emitter voltage 1.0 VBE (V) Cob – VCB Transient thermal resistance rth (°C/W) rth – tw Collector output capacitance Cob (pF) IE = 0 30 f = 1 MHz Ta = 25°C 10 5 3 100 50 30 10 5 3 1 0.5 0.3 0.1 0.001 Curves should be applied in thermal limited area. (single nonrepetitive pulse) Ta = 25°C 0.01 0.1 1 Pulse width 3 10 30 Collector-base voltage 100 IC (mA) 1.2 50 1 1 30 10 Collector current 0 0.2 10 30 10 tw 100 1000 (s) 300 100 VCB (V) PC – Ta 2.0 300 µs* IC max (continuous) DC operation Ta = 25°C 50 PC IC max (pulsed)* Collector power dissipation IC (mA) Collector current 100 (W) Safe Operating Area 300 1 ms 10 ms* 100 ms* 500 ms* 30 *: Single nonrepetitive pulse 10 5 3 1 Ta = 25°C Curves must be derated linearly with VCEO max increase in temperature. 3 5 10 30 50 Collector-emitter voltage VCE 1.2 0.8 0.4 0 0 300 500 100 1.6 (V) 25 50 75 100 Ambient temperature 3 125 Ta 150 175 (°C) 2004-07-26 2SC5173 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-26