2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V VEBO 7 V IC 5 ICP 8 IB 1 Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 20 A A W Tj 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC3303 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 1 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 1 µA V (BR) CEO IC = 10 mA, IB = 0 V Collector-emitter breakdown voltage DC current gain 80 ― ― hFE (1) VCE = 1 V, IC = 1 A (Note) 70 ― 240 hFE (2) VCE = 1 V, IC = 3 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 3 A, IB = 0.15 A ― 0.2 0.4 V Base-emitter saturation voltage VBE (sat) IC = 3 A, IB = 0.15 A ― 0.9 1.2 V fT VCE = 4 V, IC = 1 A ― 120 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 80 ― pF ― 0.2 ― ― 1.0 ― ― 0.1 ― Collector output capacitance Cob Turn-on time ton 20 µs IB1 Switching time Storage time tstg Fall time Note: hFE (1) classification tf IB1 INPUT IB2 IB2 IB1 = −IB2 = 0.15 A, DUTY CYCLE ≤ 1% OUTPUT 10 Ω Transition frequency µs VCC ≈ 30 V O: 70 to 140, Y: 120 to 240 Marking C3303 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC3303 IC – VCE VCE – IC 0.8 60 70 Common emitter Tc = 25°C Collector current 40 4 30 3 20 2 IB = 10 mA 1 0 0 VCE IC (A) 50 0 2 4 6 8 10 Collector-emitter voltage VCE Common emitter (V) 100 90 80 Collector-emitter voltage 5 12 IB = 20 mA 80 0.4 0.2 100 140 1 2 (V) VCE – IC 60 80 VCE Collector-emitter voltage 0.6 100 0.4 140 0.2 Common emitter Tc = 25°C 1 2 3 4 IB = 20 mA (V) 40 IB = 20 mA (V) VCE Collector-emitter voltage 5 VCE – IC Collector current IC 5 40 60 80 100 0.6 140 0.4 0.2 Common emitter Tc = −55°C 0 0 1 (A) 2 3 Collector current IC hFE – IC 4 5 (A) VCE (sat) – IC 5 Collector-emitter saturation voltage VCE (sat) (V) 1000 500 hFE 4 (A) 0.8 0 0 DC current gain 3 Collector current IC 0.8 300 Tc = 100°C 100 25 50 −55 30 10 Common emitter 5 VCE = 1 V 2 0.003 60 0.6 0 0 14 40 Tc = 100°C 0.01 0.03 0.1 0.3 Collector current IC 1 3 3 IC/IB = 20 1 0.5 0.3 0.1 10 Tc = −55°C 0.05 100 0.03 25 0.01 0.003 (A) Common emitter 0.01 0.03 0.1 0.3 Collector current IC 3 1 3 10 (A) 2005-02-01 2SC3303 VBE (sat) – IC IC – VBE 5 Common emitter Common emitter IC/IB = 20 VCE = 1 V IC (A) 10 5 3 Collector current Base-emitter saturation voltage VBE (sat) (V) 30 Tc = −55°C 1 0.5 25 100 0.3 0.1 0.003 0.01 0.03 0.3 0.1 1 Collector current IC 3 10 4 3 2 Tc = 100°C 25 −55 1 (A) 0 0 0.2 0.4 0.6 0.8 Base-emitter voltage rth – tw IC (A) 100 (2) 10 (1) 1 Pulse width 1 10 tw 100 10 µs* IC max (continuous) 3 100 µs* 1 ms* 10 ms* 1 DC operation Tc = 25°C 0.5 0.3 *: Single nonrepetitive pulse 0.1 0.1 (V) IC max (pulsed)* 5 (2) No heat sink Collector current Transient thermal resistance rth (°C/W) 10 (1) Infinite heat sink 0.01 1.4 Safe Operating Area nonrepetitive pulse) 0.001 VBE 1.2 20 Curves should be applied in thermal limited area. (single 0.1 1.0 1000 Tc = 25°C Curves must be derated linearly 0.05 with increase in temperature. (s) 0.03 0.3 1 3 10 Collector-emitter voltage 4 30 VCE 100 (V) 2005-02-01 2SC3303 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-01