TOSHIBA TLYH20T

TLRMH20T,TLSH20T,TLOH20T,TLYH20T
TOSHIBA InGaAℓP LED
TLRMH20T,TLSH20T,TLOH20T,TLYH20T
Panel Circuit Indicator
Unit: mm
·
5 mm package
·
InGaAℓP technology
·
All plastic mold type
·
Transparent lens
·
Lineup: 3colors (red, orange, yellow)
·
High intensity light emission
·
Excellent low current light output
·
Applications: traffic signals, safety equipment
·
Straight leads type is also available
TLRMH20TP, TLSH20TP, TLOH20TP, TLYH20TP
Line-Up
Product Name
Color
TLRMH20T
Red
TLSH20T
Red
TLOH20T
Orange
TLYH20T
Yellow
Material
InGaAlP
―
JEITA
―
TOSHIBA
―
Weight: 0.31 g
Maximum Ratings (Ta = 25°C)
Product Name
JEDEC
Forward Current
IF (mA)
Reverse Voltage
VR (V)
Power Dissipation
PD (mW)
Operating
Temperature
Topr (°C)
Storage
Temperature
Tstg (°C)
50
4
120
-40~100
-40~120
TLRMH20T
TLSH20T
TLOH20T
TLYH20T
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2002-01-18
TLRMH20T,TLSH20T,TLOH20T,TLYH20T
Electrical and Optical Characteristics (Ta = 25°C)
Product Name
Typ. Emission Wavelength
Luminous Intensity
IV
Forward Voltage
VF
Reverse Current
IR
ld
lP
Dl
IF
Min
Typ.
IF
Typ.
Max
IF
Max
VR
TLRMH20T
626
(636)
13
20
2720
9000
20
1.9
2.4
20
50
4
TLSH20T
613
(623)
13
20
4760
11000
20
2.0
2.4
20
50
4
TLOH20T
605
(612)
13
20
4760
15000
20
2.0
2.4
20
50
4
TLYH20T
587
(590)
13
20
4760
13000
20
2.0
2.4
20
50
4
mA
mA
V
Unit
nm
mA
mcd
mA
V
Precautions
·
Please be careful of the following:
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: below the lead stopper)
·
If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
·
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
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2002-01-18
TLRMH20T,TLSH20T,TLOH20T,TLYH20T
TLRMH20T
IF – VF
Ta = 25°C
3
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
(mcd)
5
IV
10
10000
5000
Luminous intensity
(mA)
30
1
1.6
Ta = 25°C
30000
50
Forward current IF
IV – IF
V
50000
100
3000
1000
500
300
100
2.3
1
3
(V)
5
10
Forward current
IV – Tc
30
IF
50
100
(mA)
Relative luminous intensity – Wavelength
10
1.0
Ta = 25°C
Relative luminous intensity
5
3
1
0.5
0.3
0.1
-20
0
20
40
Case temperature Tc
60
0.8
0.6
0.4
0.2
0
580
80
600
620
640
Wavelength l
(°C)
Radiation pattern
660
680
700
100
120
(nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
IF = 20 mA
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
80
Ambient temperature Ta (°C)
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2002-01-18
TLRMH20T,TLSH20T,TLOH20T,TLYH20T
TLSH20T
IF – VF
IV – IF
100
50000
Ta = 25°C
3
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
(mcd)
5
IV
10
10000
5000
Luminous intensity
(mA)
Forward current IF
30
1
1.6
Ta = 25°C
30000
50
3000
1000
500
300
100
2.3
1
3
(V)
5
10
Forward current
IV – Tc
30
IF
50
100
(mA)
Relative luminous intensity – Wavelength
3
1.0
IF = 20 mA
Relative luminous inten
1
0.5
0.3
0.6
0.4
0.2
0.1
-20
0
20
40
Case temperature Tc
60
0
560
80
580
600
620
Wavelength l
(°C)
Radiation pattern
640
660
680
100
120
(nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
Ta = 25°C
0.8
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
80
Ambient temperature Ta (°C)
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2002-01-18
TLRMH20T,TLSH20T,TLOH20T,TLYH20T
TLOH20T
IF – VF
100
Ta = 25°C
3
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
(mcd)
5
IV
10
10000
5000
Luminous intensity
(mA)
Forward current IF
30
1.7
Ta = 25°C
30000
50
1
1.6
IV – IF
50000
3000
1000
500
300
100
2.3
1
3
(V)
5
10
Forward current
IV – Tc
30
IF
50
100
(mA)
Relative luminous intensity – Wavelength
3
1.0
IF = 20 mA
Relative luminous intensity
1
0.5
0.3
0.1
-20
0
20
40
Case temperature Tc
60
0.6
0.4
0.2
0
540
80
560
580
600
Wavelength l
(°C)
Radiation pattern
620
640
660
100
120
(nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
Ta = 25°C
0.8
80°
0
0.2
0.4
0.6
0.8
90°
1.0
60
40
20
0
0
20
40
60
80
Ambient temperature Ta (°C)
5
2002-01-18
TLRMH20T,TLSH20T,TLOH20T,TLYH20T
TLYH20T
IF – VF
IV – IF
50000
100
Ta = 25°C
3
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
(mcd)
5
IV
10
10000
5000
Luminous intensity
(mA)
Forward current IF
30
1
1.6
Ta = 25°C
30000
50
3000
1000
500
300
100
2.3
1
3
(V)
5
10
Forward current
IV – Tc
30
IF
50
100
(mA)
Relative luminous intensity – Wavelength
3
1.0
IF = 20 mA
Relative luminous intensity
1
0.5
0.3
0.1
-20
0
20
40
Case temperature Tc
60
0.6
0.4
0.2
0
540
80
560
580
600
Wavelength l
(°C)
Radiation pattern
620
640
660
100
120
(nm)
IF – Ta
80
IF
(mA)
Ta = 25°C
20°
10°
0°
10°
30°
20°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
Allowable forward current
Relative luminous intensity
IV
Ta = 25°C
0.8
80°
0
0.2
0.4
0.6
0.8
60
40
20
0
0
90°
1.0
20
40
60
80
Ambient temperature Ta (°C)
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2002-01-18
TLRMH20T,TLSH20T,TLOH20T,TLYH20T
RESTRICTIONS ON PRODUCT USE
000707EAC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-01-18