TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V/1.65 to 2.2 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 2 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.7 μA standby current (at VDD = 3 V, Ta = 25°C, typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B can be used in environments exhibiting extreme temperature conditions. The TC55VCM416BTGN/BSGN, TC55YCM416BTGN/BSGN is available in a plastic 48-pin thin-small-outline package (TSOP). The TC55VEM416BXGN, TC55YEM416BXGN is available in a plastic 48-ball BGA. FEATURES • • • • Low-power dissipation Operating: 6 mW/MHz (typical) Power down features using CE1 and CE2 Wide operating temperature range of −40° to 85°C Lead-Free Part Number Operating Supply Voltage Access time (MAX) Package Supply Voltage 2.7~3.6 V Supply Voltage 2.3~3.6 V TC55VCM416BTGN55 48-pin Plastic TSOP(I) (12×20mm) (0.5mm pin pitch) (Normal bent) 55 ns 70 ns TC55VCM416BSGN55 48-pin Plastic TSOP(I) 2.3~3.6 V (12×14mm) (0.5mm pin pitch) (Normal bent) 55 ns 70 ns TC55VEM416BXGN55 48-ball BGA (8×11mm) (0.75mm ball pitch) 55 ns 70 ns Part Number Operating Supply Voltage Access time (MAX) Package Supply Voltage 1.8~2.2 V Supply Voltage 1.65~2.2 V 48-pin Plastic TSOP(I) (12×20mm) (0.5mm pin pitch) (Normal bent) 70 ns 85 ns 48-pin Plastic TSOP(I) TC55YCM416BSGN70 1.65~2.2 V (12×14mm) (0.5mm pin pitch) (Normal bent) 70 ns 85 ns 48-ball BGA (8×11mm) (0.75mm ball pitch) 70 ns 85 ns TC55YCM416BTGN70 TC55YEM416BXGN70 Supply Current At At Operating Standby (MAX) (MAX) 20 mA 15 μA At Data Retention 1.5~3.6 V Supply Current At At Operating Standby (MAX) (MAX) 15 mA 15 μA At Data Retention 1.0~2.2 V 2005-08-09 1/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 PIN ASSIGNMENT (TOP VIEW) 48-pin Plastic TSOP(I) (12×20mm) (0.5mm pin pitch) (Normal bent) TC55VCM416BTGN TC55YCM416BTGN 48-pin Plastic TSOP(I) (12×14mm) (0.5mm pin pitch) (Normal bent) TC55VCM416BSGN TC55YCM416BSGN A15 A14 A13 A12 A11 A10 A9 A8 A19 NC R/W CE2 OP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 UB LB A18 A17 A7 A6 A5 A4 A3 A2 A1 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 NC GND I/O16 I/O8 I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 VDD I/O12 I/O4 I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 OE GND CE1 A0 48-ball BGA (8×11mm) (0.75mm ball pitch) TC55VEM416BXGN TC55YEM416BXGN 1 2 3 4 5 6 A LB OE A0 A1 A2 CE2 B I/O9 UB A3 A4 CE1 I/O1 A5 A6 I/O2 I/O3 D GND I/O12 A17 A7 I/O4 VDD VDD I/O13 OP A16 I/O5 GND F I/O15 I/O14 A14 A15 I/O6 I/O7 G I/O16 A19 A12 A13 R/W I/O8 H A9 A10 A11 C I/O10 I/O11 E A18 A8 NC PIN NAMES A0~A19 CE1 , CE2 R/W OE LB , UB I/O1~I/O16 VDD GND Address Inputs Chip Enable Read/Write Control Output Enable Data Byte Control Data Inputs/Outputs Power Ground NC No Connection OP* Option *: OP pin must be open or connected to GND. 2005-08-09 2/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 BLOCK DIAGRAM I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 I/O16 ROW ADDRESS DECODER VDD GND MEMORY CELL ARRAY 4,096 × 128 × 16 × 2Bank (16,777,216) DATA OUTPUT BUFFER DATA INPUT BUFFER ROW ADDRESS REGISTER I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 DATA INPUT BUFFER ROW ADDRESS BUFFER CE SENSE AMP DATA OUTPUT BUFFER A1 A2 A3 A4 A8 A9 A10 A5 A6 A7 A17 A18 COLUMN ADDRESS DECODER COLUMN ADDRESS REGISTER COLUMN ADDRESS BUFFER CLOCK GENERATOR CE A19 A11 A15 A0 A13 A12 A14 A16 R/W OE UB LB CE1 CE CE2 2005-08-09 3/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 OPERATING MODE MODE Read Write Output Deselect Standby CE1 CE2 OE R/W LB UB I/O1~I/O8 I/O9~I/O16 POWER L H L H L L Output Output IDDO L H L H H L High-Z Output IDDO L H L H L H Output High-Z IDDO L H * L L L Input Input IDDO L H * L H L High-Z Input IDDO L H * L L H Input High-Z IDDO L H H H L L High-Z High-Z IDDO L H H H H L High-Z High-Z IDDO L H H H L H High-Z High-Z IDDO H * * * * * High-Z High-Z IDDS * L * * * * High-Z High-Z IDDS * = don't care H = logic high L = logic low MAXIMUM RATINGS VALUE SYMBOL VDD RATING TC55VCM416BTGN55 TC55VCM416BSGN55 TC55VEM416BXGN55 TC55YCM416BTGN70 TC55YCM416BSGN70 TC55YEM416BXGN70 UNIT −0.3~4.2 −0.3~2.5 V *1 −0.3 ~4.2 *1 −0.3 ~2.5 V −0.5~VDD + 0.5 −0.5~VDD + 0.5 V Power Supply Voltage VIN Input Voltage VI/O Input/Output Voltage PD Power Dissipation 0.6 0.6 W Tsolder Soldering Temperature (10s) 260 260 °C TSOP type −55~150 −55~150 °C Tstg Storage Temperature BGA type −55~125 −55~125 °C −40~85 −40~85 °C Ta Operating Ambient Temperature *1 : −1.0 V when measured at a pulse width of 10ns DC RECOMMENDED OPERATING CONDITIONS (Ta = −40° to 85°C) SYMBOL VDD VIH PARAMETER TEST CONDITION TC55YCM416BTGN70 TC55YCM416BSGN70 TC55YEM416BXGN70 MIN MAX MIN MAX 2.3 3.6 1.65 2.2 2.3 V ≤ VDD < 2.7 V 2.0 VDD + 0.3 ⎯ ⎯ 2.7 V ≤ VDD ≤ 3.6 V 2.2 VDD + 0.3 ⎯ ⎯ 1.65 V ≤ VDD < 1.8 V ⎯ ⎯ 1.4 VDD + 0.3 1.8 V ≤ VDD ≤ 2.2 V ⎯ ⎯ 1.6 VDD + 0.3 ⎯ Power Supply Voltage Input High Voltage TC55VCM416BTGN55 TC55VCM416BSGN55 TC55VEM416BXGN55 *2 VIL Input Low Voltage ⎯ −0.3 VDH Data Retention Supply Voltage ⎯ 1.5 VDD × 0.24 3.6 *2 −0.3 1.0 UNIT V VDD × 0.22 2.2 *2 : −1.0 V when measured at a pulse width of 10ns 2005-08-09 4/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 DC CHARACTERISTICS (Ta = −40° to 85°C, VDD = 2.3 to 3.6 V/1.65 to 2.2 V) SYMBOL PARAMETER TC55VCM416BTGN55 TC55YCM416BTGN70 TC55VCM416BSGN55 TC55YCM416BSGN70 TC55VEM416BXGN55 TC55YEM416BXGN70 UNIT TEST CONDITION MIN TYP MAX MIN TYP MAX ⎯ ⎯ ±1.0 ⎯ ⎯ ±1.0 μA IIL Input Leakage VIN = 0 V~VDD Current IOH Output High Current VOH = VDD − 0.5 V −0.5 ⎯ ⎯ −0.5 ⎯ ⎯ mA IOL Output Low Current VOL = 0.4 V 2.1 ⎯ ⎯ 2.1 ⎯ ⎯ mA ILO Output Leakage Current CE1 = VIH or CE2 = VIL or LB = UB = VIH or R/W = VIL or OE = VIH, VOUT = 0 V~VDD ⎯ ⎯ ±1.0 ⎯ ⎯ ±1.0 μA MIN ⎯ ⎯ 20 ⎯ ⎯ 12 1 μs ⎯ ⎯ 8 ⎯ ⎯ 2 MIN ⎯ ⎯ 20 ⎯ ⎯ 12 1 μs ⎯ ⎯ 2 ⎯ ⎯ 2 ⎯ ⎯ 1 ⎯ ⎯ 1 Ta = −40~85°C ⎯ ⎯ 15 ⎯ ⎯ ⎯ Ta = 25°C 1) CE1 = VDD − 0.2 V, V = 3.0 V CE2 = VDD − 0.2 V DD Ta = −40~40°C ⎯ 0.7 1.0 ⎯ ⎯ ⎯ ⎯ ⎯ 2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 15 ⎯ ⎯ ⎯ ⎯ 0.7 1.0 IDDO1 Operating Current IDDO2 CE1 = VIL and CE2 = VIH and R/W = VIH IOUT = 0 mA, Other Input = VIH/VIL tcycle CE1 = 0.2 V and CE2 = VDD − 0.2 V and R/W = VDD − 0.2 V, IOUT = 0 mA, Other Input = VDD − 0.2 V/0.2 V tcycle mA CE1 = VIH or CE2 = VIL IDDS1 VDD = 2.3~3.6 V IDDS2 mA Standby Current 2) CE2 = 0.2 V VDD = 1.65~2.2 V Ta = −40~85°C VDD = 1.8 V Ta = 25°C Note: mA μA In standby mode with CE1 ≥ VDD − 0.2 V, these limits are assured for the condition CE2 ≥ VDD − 0.2 V or CE2 ≤ 0.2 V. The other input pins are not restricted of input level. CAPACITANCE (Ta = 25°C, f = 1 MHz) SYMBOL PARAMETER TEST CONDITION MAX UNIT CIN Input Capacitance VIN = GND 10 pF COUT Output Capacitance VOUT = GND 10 pF Note: This parameter is periodically sampled and is not 100% tested. 2005-08-09 5/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 AC CHARACTERISTICS AND OPERATING CONDITIONS (Ta = −40° to 85°C) READ CYCLE TC55VCM416BTGN/BSGN55 TC55VEM416BXGN55 SYMBOL PARAMETER VDD = 2.7~3.6 V VDD = 2.3~3.6 V MIN MAX MIN MAX tRC Read Cycle Time 55 ⎯ 70 ⎯ tACC Address Access Time ⎯ 55 ⎯ 70 tCO1 Chip Enable( CE1 ) Access Time ⎯ 55 ⎯ 70 tCO2 Chip Enable(CE2) Access Time ⎯ 55 ⎯ 70 tOE Output Enable Access Time ⎯ 30 ⎯ 35 tBA Data Byte Control Access Time ⎯ 30 ⎯ 35 tCOE Chip Enable Low to Output Active 5 ⎯ 5 ⎯ tOEE Output Enable Low to Output Active 0 ⎯ 0 ⎯ tBE Data Byte Control Low to Output Active 0 ⎯ 0 ⎯ tOD Chip Enable High to Output High-Z ⎯ 25 ⎯ 30 tODO Output Enable High to Output High-Z ⎯ 25 ⎯ 30 tBD Data Byte Control High to Output High-Z ⎯ 25 ⎯ 30 tOH Output Data Hold Time 10 ⎯ 10 ⎯ UNIT ns WRITE CYCLE TC55VCM416BTGN/BSGN55 TC55VEM416BXGN55 SYMBOL PARAMETER VDD = 2.7~3.6 V VDD = 2.3~3.6 V MIN MAX MIN MAX tWC Write Cycle Time 55 ⎯ 70 ⎯ tWP Write Pulse Width 40 ⎯ 50 ⎯ tCW Chip Enable to End of Write 45 ⎯ 55 ⎯ tBW Data Byte Control to End of Write 45 ⎯ 55 ⎯ tAS Address Setup Time 0 ⎯ 0 ⎯ tWR Write Recovery Time 0 ⎯ 0 ⎯ tODW R/W Low to Output High-Z ⎯ 25 ⎯ 30 tOEW R/W High to Output Active 0 ⎯ 0 ⎯ tDS Data Setup Time 25 ⎯ 30 ⎯ tDH Data Hold Time 0 ⎯ 0 ⎯ Note: UNIT ns tOD, tODO, tBD and tODW are specified in time when an output becomes high impedance, and are not judged depending on an output voltage level. 2005-08-09 6/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 AC CHARACTERISTICS AND OPERATING CONDITIONS (Ta = −40° to 85°C) READ CYCLE TC55YCM416BTGN/BSGN70 TC55YEM416BXGN70 SYMBOL PARAMETER VDD = 1.8~2.2 V VDD = 1.65~2.2 V MIN MAX MIN MAX tRC Read Cycle Time 70 ⎯ 85 ⎯ tACC Address Access Time ⎯ 70 ⎯ 85 tCO1 Chip Enable( CE1 ) Access Time ⎯ 70 ⎯ 85 tCO2 Chip Enable(CE2) Access Time ⎯ 70 ⎯ 85 tOE Output Enable Access Time ⎯ 35 ⎯ 45 tBA Data Byte Control Access Time ⎯ 35 ⎯ 45 tCOE Chip Enable Low to Output Active 5 ⎯ 5 ⎯ tOEE Output Enable Low to Output Active 0 ⎯ 0 ⎯ tBE Data Byte Control Low to Output Active 0 ⎯ 0 ⎯ tOD Chip Enable High to Output High-Z ⎯ 30 ⎯ 35 tODO Output Enable High to Output High-Z ⎯ 30 ⎯ 35 tBD Data Byte Control High to Output High-Z ⎯ 30 ⎯ 35 tOH Output Data Hold Time 10 ⎯ 10 ⎯ UNIT ns WRITE CYCLE TC55YCM416BTGN/BSGN70 TC55YEM416BXGN70 SYMBOL PARAMETER VDD = 1.8~2.2 V VDD = 1.65~2.2 V MIN MAX MIN MAX tWC Write Cycle Time 70 ⎯ 85 ⎯ tWP Write Pulse Width 50 ⎯ 60 ⎯ tCW Chip Enable to End of Write 55 ⎯ 65 ⎯ tBW Data Byte Control to End of Write 55 ⎯ 65 ⎯ tAS Address Setup Time 0 ⎯ 0 ⎯ tWR Write Recovery Time 0 ⎯ 0 ⎯ tODW R/W Low to Output High-Z ⎯ 30 ⎯ 35 tOEW R/W High to Output Active 0 ⎯ 0 ⎯ tDS Data Setup Time 30 ⎯ 35 ⎯ tDH Data Hold Time 0 ⎯ 0 ⎯ Note: UNIT ns tOD, tODO, tBD and tODW are specified in time when an output becomes high impedance, and are not judged depending on an output voltage level. 2005-08-09 7/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 AC TEST CONDITIONS (Ta = −40 to 85°C, VDD = 2.3 to 3.6 V/1.65 to 2.2 V) TEST CONDITION TC55VCM416BTGN55 TC55VCM416BSGN55 TC55VEM416BXGN55 TC55YCM416BTGN70 TC55YCM416BSGN70 TC55YEM416BXGN70 High VDD × 0.7 + 0.2 V VDD − 0.2 V Low 0.2 V 0.2 V tR 1 V/ns 1 V/ns tF 1 V/ns 1 V/ns Timing measurements VDD × 0.5 VDD × 0.5 Reference level VDD × 0.5 VDD × 0.5 VTM 2.3 V 1.65 V R1 810 Ω 470 Ω R2 1610 Ω 740 Ω CL 30 pF 30 pF PARAMETER Input pulse level Input rise and fall time (Fig.1) Output load (Fig.2) Fig.1 : Input rise and fall time Fig.2 : Output load VTM VDD GND 90% 10% tR 90% 10% R1 Dout tF R2 CL 2005-08-09 8/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 TIMING DIAGRAMS READ CYCLE tRC Address A0~A19 tACC tOH tCO1 CE1 tCO2 CE2 tOE tOD OE tBA tODO UB , LB tBE DOUT I/O1~16 tBD tOEE Hi-Z VALID DATA OUT Hi-Z tCOE WRITE CYCLE 1 (R/W CONTROLLED) tWC Address A0~A19 tAS tWP tWR R/W tCW CE1 tCW CE2 tBW UB , LB tOEW tODW DOUT I/O1~16 (See Note 1) Hi-Z tDS DIN I/O1~16 (See Note 2) tDH VALID DATA IN 2005-08-09 9/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 WRITE CYCLE 2 ( CE1 CONTROLLED) tWC Address A0~A19 tAS tWP tWR R/W tCW CE1 tCW CE2 tBW UB , LB tBE DOUT I/O1~16 Hi-Z tODW Hi-Z tCOE tDS DIN tDH VALID DATA IN I/O1~16 WRITE CYCLE 3 (CE2 CONTROLLED) tWC Address A0~A19 tAS tWP tWR R/W tCW CE1 tCW CE2 tBW UB , LB tBE DOUT I/O1~16 Hi-Z tODW Hi-Z tCOE tDS DIN I/O1~16 tDH VALID DATA IN 2005-08-09 10/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 WRITE CYCLE 4 ( UB , LB CONTROLLED) tWC Address A0~A19 tAS tWP tWR R/W tCW CE1 tCW CE2 tBW UB , LB tBE DOUT I/O1~16 Hi-Z tODW Hi-Z tCOE tDS DIN I/O1~16 tDH VALID DATA IN Note: ・ Read cycle R/W remains HIGH for the read cycle. ・ Write cycle1 (1) If CE1 (or UB or LB ) goes LOW(or CE2 goes HIGH) coincident with or after R/W goes LOW, the outputs will remain at high impedance. (2) If CE1 (or UB or LB ) goes HIGH(or CE2 goes LOW) coincident with or before R/W goes HIGH, the outputs will remain at high impedance. Don’t input the same polarity signal as a R/W signal into a OE during the write cycle. ・ Write cycle1 to 4 If OE is HIGH during the write cycle, the outputs will remain at high impedance. Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be applied. 2005-08-09 11/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 DATA RETENTION CHARACTERISTICS (Ta = −40° to 85°C) SYMBOL TC55VCM416BTGN55 TC55VCM416BSGN55 TC55VEM416BXGN55 PARAMETER VDH Data Retention Supply Voltage IDDS2 Standby Current TC55YCM416BTGN70 TC55YCM416BSGN70 TC55YEM416BXGN70 MIN MAX MIN MAX 1.5 3.6 1.0 2.2 VDH = 3.6 V Ta = −40~85°C ⎯ 15 ⎯ ⎯ VDH = 3.0 V Ta = −40~40°C ⎯ 2 ⎯ ⎯ VDH = 2.2 V Ta = −40~85°C ⎯ ⎯ ⎯ 15 UNIT V μA tCDR Chip Deselect to Data Retention Mode Time 0 ⎯ 0 ⎯ ns tr Recovery Time 5 ⎯ 5 ⎯ ms CE1 CONTROLLED DATA RETENTION MODE VDD VDD (See Note 1) DATA RETENTION MODE 2.3 V (1.65 V) (See Note 3) (See Note 2) (See Note 2) VIH tCDR VDD − 0.2 V CE1 tr GND CE2 CONTROLLED DATA RETENTION MODE VDD VDD 2.3 V (1.65 V) (See Note 3) CE2 VIH VIL (See Note 4) DATA RETENTION MODE tCDR tr 0.2 V GND Note: (1) In CE1 controlled data retention mode, minimum standby current mode is entered when CE2 ≤ 0.2 V or CE2 ≥ VDD − 0.2 V. (2) When CE1 is operating at the VIH(min.) level, the operating current is given by IDDS1 during the transition of VDD from 2.3(2.7) to 2.2 V(2.4 V).(TC55VCM416B, TC55VEM416B) (3) When CE1 is operating at the VIH(min.) level, the operating current is given by IDDS1 during the transition of VDD from 1.65 to 1.6 V.(TC55YCM416B, TC55YEM416B) (4) In CE2 controlled data retention mode, minimum standby current mode is entered when CE2 ≤ 0.2 V. 2005-08-09 12/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 MARKING (Example) TC55VCM416BTGN/TC55YCM416BTGN Family 1pin ○○○○○○ JAPAN □□□□□□□ TC55△CM416 BTGN** TC55VCM416BSGN/TC55YCM416BSGN Family 1pin ○○○○○○ JAPAN □□□□□□□ TC55△CM416 BSGN** TC55VEM416BXGN/TC55YEM416BXGN Family JAPAN TC55△EM416 BXGN** □□□□□□□ ○○○○○○ EXPLANATION △ : Operating supply voltage (V:VDD = 2.3 to 3.6 V, Y: VDD = 1.65 to 2.2 V) ** : Speed version ○○○○○○ : Key code □□□□□□□ : Lot code Control code Week code Year code 2005-08-09 13/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 PACKAGE DIMENSIONS Unit:mm 0.25 typ 18.4 0.1 0.145 0.055 20.0 0.2 1.0 0.1 0.1 12.4max 25 12.0 0.1 24 0.1 0.05 1.2max 0~10 48 0.5 1 0.22 0.08 0.08 M TSOPⅠ48-P-1220-0.50 0.5 0.1 Weight:0.510 g (typ) 2005-08-09 14/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 PACKAGE DIMENSIONS Unit:mm 0.08 M TSOPⅠ48-P-1214-0.50 0.1 25 12.4 0.1 0.145 0.055 14.0 0.2 1.0 0.1 0.1 0.05 1.2max 0~10 0.25 typ 24 12.4max 0.5 0.22 0.08 48 12.0 0.1 1 0.5 0.1 Weight:0.353 g (typ) 2005-08-09 15/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 PACKAGE DIMENSIONS Unit:mm 0.2 S A P-TFBGA48-0811-0.75BZ 11.0 8.0 0.2 S B 4 0.15 0.1 S 0.1 S 1.2 max 0.28 0.05 S B 0.75 1 2 3 4 5 6 0.375 (3.75) A 0.08 S AB 0.43 0.05 2.125 A B C D E F G H 0.75 2.875 0.375 (5.25) Weight:0.154 g (typ) 2005-08-09 16/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 REVISION HISTORY Revision Page Draft Date Type After Passage Content Before 2005-08-09 17/18 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 RESTRICTIONS ON PRODUCT USE 030619EBA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 2005-08-09 18/18