2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3880 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100μA (max) (VDS = 640 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 kΩ) VDGR 800 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 6.5 Pulse (Note 1) IDP 19.5 Drain power dissipation (Tc = 25°C) PD 80 W Single pulse avalanche energy (Note 2) EAR 375 mJ Avalanche current IAR 6.5 A Repetitive avalanche energy (Note 3) EAR 8 mJ TOSHIBA Channel temperature Tch 150 °C Weight: 5.8 g (typ.) Storage temperature range Tstg −55~150 °C Drain current A JEDEC ― JEITA ― 2-16F1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.56 °C/W Thermal resistance, channel to ambient Rth (ch-a) 41.6 °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-13 2SK3880 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 640 V, VGS = 0 V ⎯ ⎯ 100 μA Gate leakage current Drain-source breakdown voltage Test Condition Drain cutoff current V (BR) DSS ID = 10 mA, VGS = 0 V 800 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3.5 A ⎯ 1.35 1.7 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 20 V, ID = 3.5 A 2.5 5.2 ⎯ S Input capacitance Ciss ⎯ 1500 ⎯ Reverse transfer capacitance Crss ⎯ 25 ⎯ Output capacitance Coss ⎯ 140 ⎯ ⎯ 35 ⎯ ⎯ 80 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr VOUT 0V ton RL= 114 Ω 50 Ω Turn-on time ID = 3.5 A 10 V VGS Switching time VDD ∼ − 400 V ns ⎯ 50 ⎯ toff ⎯ 220 ⎯ Total gate charge (gate-source plus gate-drain) Qg ⎯ 35 ⎯ Gate-source charge Qgs ⎯ 22 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 13 ⎯ Fall time tf Turn-off time Duty < = 1%, tw = 10 μs VDD ∼ − 400 V, VGS = 10 V, ID = 6.5 A pF nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6.5 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 19.5 A IDR = 6.5 A, VGS = 0 V ⎯ ⎯ −1.7 V (Note 1) Forward voltage (diode) VDSF Reverse recovery time trr IDR = 6.5 A, VGS = 0 V, ⎯ 1200 ⎯ ns Qrr dIDR/dt = 100 A/μs ⎯ 11.5 ⎯ μC Reverse recovery charge Marking TOSHIBA K3880 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-13 2SK3880 ID − VDS Common source COMMON SOURCE TcTc＝=25°C 25°C Pulse testTEST PULSE 4 8,10 5.5 3 ID − VDS 10 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 5 5.25 2 5 1 8,10 COMMON SOURCE Tc = 25°C PULSE TEST 6 8 5.75 6 5.5 4 5.25 5 2 VGS=4.5V VGS=4.5V 0 0 0 2 4 6 8 DRAIN−SOURCE VOLTAGE VDS (V) 0 10 ID − VGS DRAIN−SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Common source COMMON SOURCE V DS=20V VDS = 20 V Pulse test PULSE TEST 8 Ta=100℃ 4 -55 25 0 30 40 50 COMMON CommonSOURCE source Tc = 25°C Ta=25℃ PULSE TEST Pulse test 16 ID=7A 12 8 3.5 4 1.5 0 0 2 4 6 GATE−SOURCE VOLTAGE VGS 8 10 0 4 8 12 16 GATE−SOURCE VOLTAGE VGS (V) (V) ⎪Yfs⎪ − ID 100 RDS (ON) − ID PULSE TEST 10 20 10.00 Common source COMMON SOURCE VDS=20V VDS = 20 V Pulse test DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 20 VDS − VGS 20 16 12 10 DRAIN−SOURCE VOLTAGE VDS (V) 25 -55 Ta=100℃ 1 Common source COMMON SOURCE V GS =10V VGS = 10 V Tc =Tc=25℃ 25°C PULSE PulseTEST test 1.00 0.10 0.1 0.1 1 10 DRAIN CURRENT ID (A) 0.01 100 3 0.1 1 DRAIN CURRENT ID (A) 10 2006-11-13 2SK3880 RDS (ON) − Tc Common COMMONsource SOURCE =10V V GS VGS = 10 V PULSE PulseTEST test 4 7 3 3 2 ID=1.5A 1 0 -40 0 40 80 120 CASE TEMPERATURE Tc (°C) 1 3 10 VGS=0､-1V 1 160 0 Vth (V) GATE THRESHOLD VOLTAGE 1000 Coss COMMON SOURCE Common source VGS = 0 V VGS=0V f = 1 MHz f=1MHz Tc = 25°C Tc=25℃ Crss 10 1 10 3 2 COMMON SOURCE Common source V DS=10V ID = 1 mA ID=1mA PULSE TEST Pulse test VDS = 10 V 1 -40 20 40 20 0 120 (V) DRAIN−SOURCE VOLTAGE VDS (V) PD (W) DRAIN POWER DISSIPATION 160 500 60 CASE TEMPERATURE 0 40 80 120 CASE TEMPERATURE Tc (°C) DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 80 -1.2 4 -80 100 40 -1 0 100 PD − Tc 0 -0.8 Vth − Tc DRAIN−SOURCE VOLTAGE VDS (V) 120 -0.6 400 VDD=100V 300 12 200V 400V 200 8 COMMON Common SOURCE source IDID=6.5A = 6.5 A 100 4 Tc=25℃ Pulse test Tc = 25°C PULSE TEST 0 0 0 160 16 VDS GATE−SOURCE VOLTAGE VGS 0.1 -0.4 5 Ciss 100 -0.2 DRAIN−SOURCE VOLTAGE VDS (V) CAPACITANCE – VDS 10000 (pF) COMMON Common SOURCE source Tc = 25°C Tc=25℃ PULSE TEST Pulse test 0.1 -80 CAPACITANCE C IDR − VDS 10 DRAIN REVERSE CURRENT IDR (A) DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) 5 20 40 60 TOTAL GATE CHARGE Qg (nC) Tc (°C) 4 2006-11-13 2SK3880 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth − tw 10 1 0.1 0.01 Duty = 0.5 0.2 0.1 0.0 0.0 PDM t 0.0 Ｔ SINGLE PULSE DUTY = t/T 0.001 0.00001 Ｒ th (ch-c) = 1.56°C/W 0.0001 0.001 0.01 0.1 PULSE WIDTH tw 1 (S) SAFE OPERATING AREA EAS – Tch 400 100 μs* ID MAX (PULSED) ID MAX (CONTINUOUS) Ｉ 10 AVALANCHE ENERGY EAS (mJ) 100 DRAIN CURRENT ID (A) 10 1 ms* 1 DC OPERATION Tc = 25°C 350 300 250 200 150 100 50 0 0.1 * SINGLE NONREPETITIVE PULSE Tc = 25°C Curves must be derated linearly with increase in temperature 25 50 75 100 125 CHANNEL TEMPERATURE (INITIAL) VDSS MAX 150 Tch (°C) 0.01 1 10 100 1000 DRAIN−SOURCE VOLTAGE VDS (V) 15 V BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 16.1 mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-13 2SK3880 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-13