TOSHIBA 2SJ380_07

2SJ380
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (L2-π-MOSV)
2SJ380
Relay Drive, DC-DC Converter and Motor Drive
Applications
•
Unit: mm
4-V gate drive
•
Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
•
High forward transfer admittance: |Yfs| = 7.7 S (typ.)
•
Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)
•
Enhancement mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−100
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−100
V
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
−12
Pulse (Note 1)
IDP
−48
Drain power dissipation (Tc = 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
312
mJ
Avalanche current
IAR
−12
A
Repetitive avalanche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
DC
Drain current
A
JEDEC
―
JEITA
TOSHIBA
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.57
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note1:
Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.94 mH, RG = 25 Ω, IAR = −12 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2SJ380
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-off current
IDSS
VDS = −100 V, VGS = 0 V
⎯
⎯
−100
μA
ID = −10 mA, VGS = 0 V
−100
⎯
⎯
V
VDS = −10 V, ID = −1 mA
V
Drain-source breakdown voltage
V (BR) DSS
Gate threshold voltage
Vth
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
⎪Yfs⎪
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
−0.8
⎯
−2.0
VGS = −4 V, ID = −6 A
⎯
0.25
0.32
VGS = −10 V, ID = −6 A
⎯
0.15
0.21
VDS = −10 V, ID = −6 A
4.5
7.7
⎯
S
⎯
1100
⎯
pF
⎯
200
⎯
pF
⎯
440
⎯
pF
⎯
18
⎯
⎯
30
⎯
⎯
18
⎯
⎯
65
⎯
⎯
48
⎯
nC
⎯
29
⎯
nC
⎯
19
⎯
nC
VDS = −10 V, VGS = 0 V, f = 1 MHz
tr
ID = −6 A
0V
ton
Fall time
50 Ω
Switching time
tf
VOUT
RL = 8.3 Ω
Turn-on time
VGS
−10 V
Ω
ns
VDD ∼
− −50 V
Turn-off time
toff
Total gate charge
Qg
(gate-source plus gate-drain)
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
Duty <
= 1%, tw = 10 μs
VDD ∼
− −80 V, VGS = −10 V,
ID = −12 A
Source-Drain Ratings and Characteristics (Tc = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDR
⎯
⎯
⎯
−12
A
IDRP
⎯
⎯
⎯
−48
A
Forward voltage (diode)
VDSF
IDR = −12 A, VGS = 0 V
⎯
⎯
1.7
V
Reverse recovery time
trr
IDR = −12 A, VGS = 0 V
⎯
160
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 50 A/μs
⎯
0.5
⎯
μC
Marking
J380
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SJ380
ID – VDS
Common source
Tc = 25°C
Pulse test
−4
−3
−8
−10
−16
−6
Common source
Tc = 25°C
Pulse test
−8
−6
(A)
Drain current ID (A)
−4
ID – VDS
−20
Drain Current ID
−5
−3
−2.5
−2
−1
−4
−12
−10
−3.5
−8
−3
−4
−2.5
VGS = −2 V
VGS = −2 V
0
0
−0.4
−1.2
−0.8
Drain-source voltage
−1.6
0
0
−2.0
VDS (V)
−2
−4
VDS (V)
Common source
25
Tc = −55°C
100
−6
−4
−2
−1
−2
−3
−4
Gate-source voltage
−5
Tc = 25°C
Pulse test
−2.4
−1.6
−4
−0.8
−2
0
0
−6
ID = −8 A
VGS (V)
−4
−8
−16
−20
VGS (V)
RDS (ON) – ID
30
2.0
Common source
VDS = −10 V
Pulse test
10
Drain–source ON resistance
RDS (ON) (Ω)
(S)
−12
Gate-source voltage
⎪Yfs⎪ – ID
Forward transfer admittance ⎪Yfs⎪
VDS (V)
VDS – VGS
Common source
VDS = −10 V
Pulse test
0
0
−10
−3.2
Drain-source voltage
Drain current ID (A)
−8
−8
Drain-source voltage
ID – VGS
−10
−6
Tc = −55°C
25
100
5
3
1.0
Common source
Tc = 25°C
Pulse test
0.5
0.3
VGS = −4 V
−10
0.1
0.05
1
−0.3
−1.0
−3
−10
0.03
−0.1
−20
Drain current ID (A)
−0.3
−1.0
−3
−10
−20
Drain current ID (A)
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IDR – VDS
−30
Common source
Common source
Pulse test
Tc = 25°C
−4
(A)
ID = −8 A
0.4
−8
Drain reverse current IDR
Drain-source ON resistance RDS (ON)
(Ω)
RDS (ON) – Tc
0.5
0.3
−2, −4
VGS = −4 V
0.2
−2
0.1
0
−80
−10
−5
−3
−1
−0.5
−40
−0.3
0
40
80
120
160
VGS = −10 V
−3
VGS = −10 V
0
Pulse test
−2
−5
0, 1
−1
0.4
0.2
Case temperature Tc (°C)
0.6
Drain-source voltage
Capacitance – VDS
Vth (V)
500
Gate threshold voltage
(pF)
Capacitance C
Ciss
1000
Coss
300
Common source
100 VGS = 0 V
Crss
f = 1 MHz
Tc = 25°C
−0.3
−1
−3
Drain-source voltage
VDS (V)
Common source
VDS = −10 V
ID = −1 mA
Pulse test
3000
30
−0.1
1.0
Vth – Tc
−4
5000
50
0.8
−10
−30
−100
VDS (V)
−3
−2
−1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
Dynamic Input/Output Characteristics
VDS (V)
Drain-source voltage
Drain power dissipation PD (W)
30
20
10
0
0
40
80
120
−80
−60
VDS
VDD = −80 V
−20
−16
−12
−20 V
−40
−8
−40 V
−20
−4
VGS
0
0
160
Common source
ID = −12 A
Tc = 25°C
Pulse test
20
40
60
80
VGS (V)
−100
Gate-source voltage
PD – Tc
40
0
100
Total gate charge Qg (nC)
Case temperature Tc (°C)
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rth – tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
3
1
Duty = 0.5
0.5
0.3
0.2
0.1
0.05
0.05
0.02
0.1
0.03
PDM
t
0.01
Single pulse
T
0.01
Duty = t/T
Rth (ch-c) = 3.57°C/W
0.005
0.003
10 μ
100 μ
1m
10 m
Pulse width
100 m
tw
1
(s)
Safe Operating Area
EAS – Tch
−100
500
IC max (pulsed)*
100 μs*
−30
1 ms*
ID max (continuous)
Drain current ID (A)
Avalanche energy EAS (mJ)
−50
10
10 ms*
−10
−5
−3
DC operation
Tc = 25°C
400
300
200
100
−1
−0.5
−0.3
0
25
*: Single nonrepetitive
pulse Tc = 25°C
−3
−10
75
100
125
150
Channel temperature (initial) Tch (°C)
Curves must be derated
linearly with increase in
temperature.
−0.1
−1
50
VDSS max
−30
Drain-source voltage
−100
−300
VDS (V)
15 V
BVDSS
IAR
−15 V
VDS
VDD
Test circuit
RG = 25 Ω
VDD = −25 V, L = 2.94 mH
5
Wave form
⎞
1 2 ⎛
B VDSS
⎟
Ε AS = ·L·I · ⎜⎜
⎟
2
−
B
V
DD ⎠
⎝ VDSS
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2SJ380
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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