2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3417 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 60 ns (typ.) • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage VGSS ±30 V (Note 1) ID 5 Pulse (Note 1) IDP 20 Drain power dissipation (Tc = 25°C) PD 50 W Single pulse avalanche energy (Note 2) EAR 180 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C DC Drain current A JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.5 °C/W Thermal resistance, channel to ambient Rth (ch-a) 83.3 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, RG = 25 Ω, IAR = 5 A JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-06 2SK3417 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±100 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 100 μA Gate leakage current Drain-source breakdown voltage Test Condition Drain cut-OFF current V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 2.5 A ⎯ 1.6 1.8 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 2.5 A 2.5 4.0 ⎯ S Input capacitance Ciss ⎯ 780 ⎯ Reverse transfer capacitance Crss ⎯ 60 ⎯ Output capacitance Coss ⎯ 200 ⎯ ⎯ 12 ⎯ ⎯ 25 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr VOUT 0V ton RL = 90 Ω 15 Ω Turn-ON time ID = 2.5 A 10 V VGS Switching time VDD ∼ − 225 V ns ⎯ 15 ⎯ toff ⎯ 60 ⎯ Total gate charge (gate-source plus gate-drain) Qg ⎯ 17 ⎯ Gate-source charge Qgs ⎯ 11 ⎯ Gate-drain (“miller”) charge Qgd ⎯ 6 ⎯ Fall time tf pF Duty < = 1%, tw = 10 μs Turn-OFF time VDD ∼ − 400 V, VGS = 10 V, ID = 5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 5 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 20 A ⎯ ⎯ −1.7 V (Note 1) VDSF IDR = 5 A, VGS = 0 V Reverse recovery time trr IDR = 5 A, VGS = 0 V, ⎯ 60 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 0.1 ⎯ μC Forward voltage (diode) Marking K3417 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK3417 ID − VDS Drain current ID (A) 4 Common source Tc = 25°C Pulse test 15 ID − VDS 10 6.25 10 6.5 6 3 5.75 2 5.5 8 Drain current ID (A) 5 5.25 1 4 8 12 Drain-source voltage 16 6.5 6 6 4 5.5 VGS = 5 V 0 0 20 10 VDS (V) 20 30 Drain-source voltage ID − VGS 40 50 VDS (V) VDS − VGS 10 20 VDS (V) Common source VDS = 20 V Pulse test 8 6 Drain-source voltage Drain current ID (A) 10 7 2 VGS = 5 V 0 0 15 Common source Tc = 25°C Pulse test 100 4 2 Common source Tc = 25°C Pulse test 16 12 ID = 5 A 8 2.5 4 1.2 Tc = 25°C 0 0 2 4 6 Gate-source voltage 8 0 0 10 4 VGS (V) 8 Gate-source voltage ⎪Yfs⎪ − ID Common source VDS = 20 V Pulse test 5 Tc = 25°C 1 1 20 VGS (V) Common source Tc = 20 °C Pulse test 3 100 0.1 0.1 16 RDS (ON) − ID 10 Drain-source on resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) 10 12 15 1 0.5 0.3 0.1 0.1 10 Drain current ID (A) VGS = 10 V 1 10 Drain current ID (A) 3 2006-11-06 2SK3417 IDR − VDS 10 8 (A) Common source VGS = 10 V Pulse test Drain reverse current IDR 6 ID = 5 A 4 2.5 1.2 2 Common source Tc = 25°C Pulse test 1 10 5 0 0 40 80 120 Channel temperature Tc 3 0.1 0 160 (°C) −0.4 Vth (V) Ciss 300 Gate threshold voltage VDS (V) 100 Coss 50 30 Common source VGS = 0 V f = 1 MHz Tc = 25°C 0.3 0.5 3 5 Drain-source voltage 10 30 50 3 2 1 0 0 Crss 1 4 40 80 120 Channel temperature Tc 100 PD − Tc Dynamic input/output characteristics 500 Common source ID = 5 A Tc = 25°C Pulse test (V) 400 VDS 40 Drain-source voltage 30 20 10 80 120 Case temperature (°C) VDS (V) 50 40 160 Tc 160 (°C) 12 200 400 200 8 VGS 100 4 5 10 Total gate charge 4 16 VDD = 100 V 300 0 0 200 VDS 20 15 Qg (V) 5 0.1 Common source VDS = 10 V ID = 1 mA Pulse test VGS (pF) 500 10 0 −1.6 5 1000 Capacitance C −1.2 Vth − Tc Capacitance – VDS Drain power dissipation PD (W) −0.8 Drain-source voltage 2000 10 VGS = 0, 1 V 20 Gate-source voltage Drain-source on resistance RDS (ON) (Ω) RDS (ON) − Tc 10 0 25 (nC) 2006-11-06 2SK3417 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-a) 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single pulse T Duty = t/T Rth (ch-c) = 3.57°C/W 0.001 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 (S) Safe operating area EAS – Tch 200 ID max (pulsed) * 10 100 μs * ID max (continuous) * Drain current ID (A) Avalanche energy EAS (mJ) 100 30 10 3 DC operation Tc = 25°C 1 1 ms * 160 120 80 40 0.3 0 25 50 0.1 125 150 Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 1 100 Channel temperature (initial) Tch (°C) * 0.03 75 10 Drain-source voltage VDSS max 100 1000 15 V VDS (V) BVDSS IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 90 V, L = 12.2 mH 5 Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-06 2SK3417 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06