2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) • Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V Gate-source voltage VGSS ±20 V (Note 1) ID 10 Pulse (tw ≤ 10 ms) (Note 1) IDP 15 Pulse (tw ≤ 1 ms) (Note 1) IDP 28 Drain power dissipation (Tc = 25°C) PD 20 Single-pulse avalanche energy (Note 2) EAS Avalanche current DC Drain current A JEDEC ― W JEITA ― 280 mJ TOSHIBA IAR 10 A EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Repetitive avalanche energy (Note 3) 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C/ W Thermal resistance, channel to ambient Rth (ch−a) 125 °C/ W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 3.44 mH, IAR = 10 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-20 2SK3669 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 100 V, VGS = 0 V ⎯ ⎯ 100 μA ID = 10 mA, VGS = 0 V 100 ⎯ ⎯ V Drain-source breakdown voltage V (BR) DSS VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 5 A ⎯ 95 125 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 5 A 3 6 ⎯ S Input capacitance Ciss ⎯ 480 ⎯ Reverse transfer capacitance Crss ⎯ 9 ⎯ Output capacitance Coss ⎯ 220 ⎯ ⎯ 2 ⎯ ⎯ 12 ⎯ ⎯ 2 ⎯ ⎯ 12 ⎯ ⎯ 8.0 ⎯ ⎯ 5.6 ⎯ ⎯ 2.4 ⎯ Vth Rise time tr Turn-on time ton VDS = 10 V, VGS = 0 V, f = 1 MHz 50 Ω Switching time Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“Miller”) charge Qgd ID = 10 A 10 V VGS 0V VOUT RL = 5 Ω Gate threshold voltage VDD ≈ 50 V Duty ≤ 1%, tw = 10 μs VDD ≈ 80 V, VGS = 10 V, ID = 10 A pF ns nC Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 10 A Pulse drain reverse current (tw ≤ 10 ms) (Note 1) IDRP ⎯ ⎯ ⎯ 15 A Pulse drain reverse current (tw ≤ 1 ms) (Note 1) IDRP ⎯ ⎯ ⎯ 28 A Continuous drain reverse current Forward voltage (diode) VDS2F IDR1 = 10 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 10 A, VGS = 0 V, ⎯ 65 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 50 A/μs ⎯ 90 ⎯ nC Marking K3669 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-20 2SK3669 ID – VDS 10 Common source Tc = 25°C Pulse test 9.5 8.5 10 9 8 Common source Tc = 25°C Pulse test 9 15 16 15 Drain current ID (A) Drain current ID (A) 8 ID – VDS 20 7.5 6 4 7 10 8.5 12 8 8 7.5 VGS = 6.5 V 4 2 VGS = 6.5 V 0 0 0.4 1.2 0.8 Drain-source voltage 1.6 0 0 2.0 VDS (V) 2 Drain-source voltage ID – VGS 8 10 VDS (V) VDS – VGS 20 2.0 VDS (V) Common source VDS = 10 V Pulse test 16 12 Drain-source voltage Drain current ID (A) 6 4 8 Ta = −55°C 4 100 Common source Tc = 25°C Pulse test 1.6 1.2 ID = 10 A 0.8 100 5 0.4 2.5 25 0 0 4 8 12 Gate-source voltage 16 0 0 20 VGS (V) 4 8 Gate-source voltage 50 5 30 3 Tc = −55°C 5 100 3 25 1 0.5 Common source VDS = 10 V Pulse test 0.3 0.1 0.1 1 16 20 VGS (V) RDS (ON) – ID Drain-source ON-resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) ⎪Yfs⎪ – ID 10 12 10 Common source Tc = 25°C Pulse test 1 0.5 0.3 VGS = 10 V 0.1 15 0.05 0.03 0.01 0.1 100 Drain current ID (A) 1 10 100 Drain current ID (A) 3 2006-11-20 2SK3669 RDS (ON) – Tc IDR – VDS 100 200 (A) Common source VGS = 10 V Pulse test ID = 10 A Drain reverse current IDR Drain-source ON-resistance RDS (ON) ( Ω) 250 5A 2.5 150 100 50 10 10 3 1 Common source 0 −80 −40 0 40 80 120 0.1 0 160 0.5 Case temperature Tc (°C) Tc = 25°C VGS = 0, −1 V 1 1 Pulse test 1.5 Drain-source voltage Capacitance – VDS 2 2.5 VDS (V) Vth – Tc 3000 10 Common source Coss 50 30 Common source Tc = 25°C f = 1 MHz 5 V GS = 0 V 3 0.1 0.3 Pulse test 6 4 2 Crss 1 3 10 Drain-source voltage 30 100 300 0 −80 0 40 VDS (V) 20 Drain-source voltage 15 10 5 80 120 160 Dynamic input/output characteristics 100 40 80 Case temperature Tc (°C) PD – Tc Drain power dissipation PD (W) −40 VDS (V) 25 0 0 ID = 1 mA 120 80 Case temperature Tc (°C) VDS 25 20 60 15 40 10 VGS 20 0 0 160 Common source ID = 10 A VDD = 80 V Tc = 25°C Pulse test 5 5 10 15 VGS (V) 10 VDS = 10 V 8 Gate-source voltage 100 Ciss Gate threshold voltage (pF) 300 Capacitance C 500 Vth (V) 1000 0 20 Total gate charge Qg (nC) 4 2006-11-20 2SK3669 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 0.01 t T 0.01 Single pulse 0.003 10 μ 100 μ Duty = t/T Rth (ch-c) = 6.25°C/W 1m 10 m Pulse width 100 m tw 1 (S) Safe operating area EAS – Tch 300 ID max (pulsed)* 100 μs* 1 ms* 10 (A) Avalanche energy EAS (mJ) 100 5 ID max (continuous) 10 ms* 3 Drain current ID 10 1 0.5 0.3 0.1 * Single nonrepetitive pulse Tc = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.01 0.1 0.3 1 3 240 180 120 60 0 25 0.05 50 75 100 125 Channel temperature (initial) Tch 150 (°C) VDSS max 10 Drain-source voltage 30 100 300 VDS (V) BVDSS 15 V IAR −15 V VDD Test circuit RG = 25 Ω VDD = 50 V, L = 3.44 mH 5 VDS Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 ⎝ VDSS − VDD ⎠ 2006-11-20 2SK3669 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-20