2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3309 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 kΩ) VDGR 450 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 10 Pulse (Note 1) IDP 40 Drain power dissipation (Tc = 25°C) PD 65 W Single pulse avalanche energy (Note 2) EAS 222 mJ Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 6.5 Channel temperature Tch Storage temperature range Tstg Drain current A JEDEC ― mJ JEITA ― 150 °C TOSHIBA −55~150 °C 2-10S1B Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.92 °C/W Thermal resistance, channel to ambient Rth (ch-a) 83.3 °C/W Note 1: Please use devise on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 Ω, IAR = 10 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 2006-11-06 2SK3309 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 450 V, VGS = 0 V ⎯ ⎯ 100 μA ⎯ ⎯ V Drain cut-off current Drain-source breakdown voltage Min IGSS Gate leakage current Gate -source breakdown voltage Test Condition 450 V (BR) DSS ID = 10 mA, VGS = 0 V Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Gate threshold voltage 550 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 5 A ⎯ 0.48 0.65 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 5 A 1.5 4.3 ⎯ S Input capacitance Ciss ⎯ 920 ⎯ Reverse transfer capacitance Crss ⎯ 12 ⎯ Output capacitance Coss ⎯ 140 ⎯ ⎯ 25 ⎯ ⎯ 35 ⎯ Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr Switching time Fall time VOUT 0V ton RL = 40 Ω 10 Ω Turn-on time ID = 5 A 10 V VGS tf Duty < = 1%, tw = 10 μs Turn-off time Qg Gate-source charge Qgs Gate-drain charge Qgd ns ⎯ 10 ⎯ ⎯ 60 ⎯ ⎯ 23 ⎯ ⎯ 9 ⎯ ⎯ 14 ⎯ VDD ∼ − 200 V toff Total gate charge pF VDD ∼ − 360 V, VGS = 10 V, ID = 10 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 10 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 40 A (Note 1) Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 10 A, VGS = 0 V, ⎯ 280 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 2.7 ⎯ μC Marking K3309 ※ ※ Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2006-11-06 2SK3309 ID – VDS Drain current ID (A) 8 15 Common source ID – VDS 20 10 15 8.5 Tc = 25°C Pulse test 8 6 7.5 4 Common source 10 7 Tc = 25°C Pulse test 9 16 Drain current ID (A) 10 8.5 12 8 8 7.5 7 4 2 VGS = 6 V 0 0 2 4 6 Drain-source voltage 8 VGS = 6 V 0 0 10 VDS (V) 10 20 Drain-source voltage ID – VGS Common source VDS = 20 V Pulse test 12 8 25 4 Tc = −55°C 100 0 0 2 4 6 Gate-source voltage 8 10 Tc = 25°C Pulse test 8 6 ID = 10 A 4 5 2 2.5 0 0 12 VGS (V) 4 16 20 VGS (V) RDS (ON) – ID 10 Common source Tc = 25°C Pulse test Drain-source on resistance RDS (ON) (Ω) (S) Forward transfer admittance ⎪Yfs⎪ 12 8 Gate-source voltage Common source VDS = 20 V Pulse test 10 25 Tc = −55°C 100 1 0.1 0.1 VDS (V) Common source ⎪Yfs⎪ – ID 100 50 VDS – VGS Drain-source voltage Drain current ID (A) 16 40 10 VDS (V) 20 30 1 10 1 VGS = 10, 15 V 0.1 1 100 Drain current ID (A) 10 100 Drain current ID (A) 3 2006-11-06 2SK3309 RDS (ON) – Tc Common source VGS = 10 V Pulse test 5 ID = 10 A 2.5 0.8 0.4 10 1 10 5 0.1 1 3 −40 0 40 80 Case temperature Tc 120 0.01 0 160 (°C) −0.2 VGS = 0, −1 V −0.4 Capacitance – VDS Vth – Tc Vth (V) Gate threshold voltage Capacitance C (pF) Ciss 100 Coss 10 Common source Crss VGS = 0 V 1 10 100 Drain-source voltage 4 3 2 1 −40 0 40 80 Case temperature Tc 1000 PD – Tc VDS (V) 80 Drain-source voltage 60 40 20 80 (°C) Dynamic input/output characteristics 500 40 160 120 VDS (V) 100 Drain power dissipation PD (W) Common source VDS = 10 V ID = 1 mA Pulse test 5 0 −80 f = 1 MHz 1 0.1 −1.2 VDS (V) 6 1000 −1 −0.8 Drain-source voltage 10000 0 0 −0.6 120 Case temperature Tc 160 (°C) ID = 10 A Tc = 25°C Pulse test 400 VDD = 90 V 300 VDS 200 20 16 12 360 180 8 VGS 4 100 0 0 200 Common source 10 20 30 40 VGS (V) 0 −80 Gate-source voltage 1.2 Common source Tc = 25°C Pulse test (A) 1.6 IDR – VDS 100 Drain reverse current IDR Drain-source on resistance RDS (ON) (Ω) 2.0 0 50 Total gate charge Qg (nC) 4 2006-11-06 2SK3309 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-a) 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 PDM Single pulse t 0.01 0.01 T Duty = t/T Rth (ch-c) = 1.92°C/W 0.001 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 10 (S) EAS – Tch Safe operating area 400 100 ID max (continuous) Avalanche energy EAS (mJ) ID max (pulse) * 100 μs * Drain current ID (A) 10 1 ms * 1 DC operation Tc = 25°C 300 200 100 0 25 0.1 50 75 100 125 150 Channel temperature (initial) Tch (°C) * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in VDSS max temperature. 0.01 1 15 V 10 Drain-source voltage 100 1000 BVDSS IAR −15 V VDS (V) VDD Test circuit RG = 25 Ω VDD = 90 V, L = 3.7 mH 5 VDS Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2006-11-06 2SK3309 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06